10. Appendix

More documents

Recommendations

Info

772 Subject Index – – Czochralski 5 – internal strain parameter ˙ 150, 155 – intervalley scattering 215 – – g- and f-processes 215–216 – lattice absorption 301 – Luttinger parameters 175 – mobility in n-type samples 221–222 – MOSFET 538 – Penn gap 337 – phonon dispersion 111 – photoconductive response 571 – photocurrent yield from clean and contaminated (111) surfaces 434 – photothermal ionization spectrum (PTIS) of P donors 313 – porous Si 351 – pseudopotential form factors 61, 63 – QHE 539, 576 – radiative lifetime 352 – Raman spectra 389, 390 – reflectance 254 – – energies of prominent structures 268 – reflectance difference spectra 332 – spin-orbit splitting 75, 267 – scattering rate of conduction electrons 213 – stiffness constants 141 – tight-binding parameters 91 – UPS from near-intrinsic and heavily doped sample 464 – valence band parameters 75 – valence band structure and density of states 92 – valence charge distribution 108 – XPS spectrum 442 – zone edge phonon energies 303 Silent phonon modes 138 Similarity transformations 34 Slater-Koster interaction 194 SnS 3, 445 SnSe 445 Solar cells 566 – based on amorphous and crystalline Si 567 – based on polycrystalline Si 568 Space charge layers 460 Space charge penetration in band bending 463 Space groups 28 Spatial dispersion 245, 337 Spectral resolving power 386 Spectroscopic ellipsometry 250 Spherical approximation in calculating acceptor level energies 177 Spherical harmonics 73, 175, 280 Spherical tensors 174 Spin 71, 166 Spin dynamics of electrons 520 Spin-orbit coupling 64, 71, 266, 564, 571 – in atomic physics 71 Spin-orbit interaction 71, 147 Spin-orbit split-off hole band – effective mass 75 – IR absorption 564 Spin-orbit splitting 74 – along (111) direction ¢ 1 267 – atomic 74 – at zone center ¢ 0 267 Spin-polarized photoelectron spectra in GaAs 435 Spontaneous emission 346, 422 Square well 473 SrTiO 3 1 Stacking of atomic layers in zincblende- and wurtzite-type crystals 142 Stark ladders 580, 581 Static effective charge 304 Sticking coefficient at surfaces 465 Stiffness constants of diamond- and zincblendetype semiconductors 141 Stiffness tensor 140 Stimulated emission 258, 260, 346, 422 Stimulated Raman scattering 385 Stokes Raman scattering 377, 384 Strain 7 Strain tensor 123 – irreducible components 123 – volume dilation 124 Stranski-Krastanow growth 11 Stray light rejection of Raman spectrometers 386 Stress 138 Stress tensor 128, 138 Structure factor 61 Subbands 483 Subgroups 28 Substitutional defects 160 Sulfur 2 Sum rules 335 Superconductors 1, 3 Supperlattices (SL’s) 5, 469, 578 – birth 578 – Bloch oscillations 581 – electrons and holes 487–489 – – tight-binding (LCAO) calculation 490 – minibands 488 – negative differential resistance 580 – phonons 494–511 – – in polar SL’s 502 – – interface modes 502–511 – – Si-Ge 496–498, 501 – Raman spectra 511 – – interface modes 518
– – LA phonons 512 – – LO phonons 517, 519 – resonant tunneling 581 – schematic diagram 578 – short-period 486 – Stark ladder 580, 581 – strained-layer 470 – Tamm surface states 581 Surface core level – InAs 455 – oxygen effects 455 Surface depletion layer 462 Surface effects in photoemission 457 Surface energy bands 455, 458 – Ge(111)-(2 × 1) surface 461 Surface enrichment layer 462 Surface gap of Si and Ge 460 Surface phonon 338 Surface plasmon 338 Surface plasmon frequency 338 Surface reconstruction 458 Surface resonance 458 Surface states 160, 445, 457 Surface waves 338 Surfaces and interfaces 208 Symmetrization 41 – of long wavelength vibrations 41 – of basis functions 41 Symmetrized wavefunctions 24 – at X 98 Symmetry operations 24 – equivalent 24, 36 – of diamond and zincblende structures 30 – of methane molecule 26 – of wurtzite crystals 143 Symmorphic groups 28 Synchrotron radiation 250, 428, 448 – absorption spectra of Ge, GaAs, GaP 428 – tunable 463 T Tamm surface states 581 TaS 2 574 TaSe 2 574 T d point group – basis function 37 – character table 35 – irreducible representations 36 Tellurium 2, 157 Temperature dependence of bandgaps 340 – E 0 gap in Ge 320 Temporal evolution of DAP transition 359 Subject Index 773 Tetrahedral bonding 2, 566 – in amorphous semiconductors 566 Thermal expansion 108 – effect on gaps 341 – low temperature anomalies 108 Thermal ionization energy of impurity levels 181 Thermalization time 225 Thermoluminescene 319, 345 Thermoreflectance spectra of GaAs 320 Third derivative spectroscopy 327 Third monochromator 386 Third-order nonlinear susceptibility in Ge 341 Thomas-Fermi screening 217 Three-dimensional critical points (see also van Hove singularities) 267 Three-step photoemission model 440, 446 Threshold function in photoemission 433 Ti doped sapphire laser 386 Tight binding – Hamiltonian 89 – model 83, 89 – – comparison with EPM in Si 92 – – interaction parameters for C, Si, Ge 91 – – optical deformation potential d 0 153 – – superlattice 474 Time-reversal symmetry 82, 383 Tin, phonon dispersion 120 Transverse optical (TO) phonon 111, 297 Total angular momentum 73 Total decay rate 352 Total energy 108 Total recombination time 352 Transfer matrices 528 Transferability of pseudopotential 67 Transformation matrix 33 Translation operator 20 Translational symmetry 20 Transmission coefficient of electrons through a double barriers 529 Transport of carriers – in parabolic bands 207 – quasi-classical approach 203 Transverse acoustic (TA) phonons 110 – fast 142 – slow 142 Transverse charge 303 – in zincblende-type semiconductors 305 Transverse exciton energy 337, 363 Transverse resistivity 538 Transverse resonance frequency 294 Transverse vibrations 294 Triad screw axis 29 Trimethyl gallium 7 Trions 369
Page 1 and 2:
Appendix A: Pioneers of Semiconduct
Page 3 and 4:
Ultra-Pure Germanium 555 Ultra-Pure
Page 5 and 6:
References Ultra-Pure Germanium 557
Page 7 and 8:
Two Pseudopotential Methods: Empiri
Page 9 and 10:
The Early Stages of Band-Structures
Page 11 and 12:
Cyclotron Resonance and Structure o
Page 13 and 14:
References Cyclotron Resonance and
Page 15 and 16:
Optical Properties of Amorphous Sem
Page 17 and 18:
Optical Spectroscopy of Shallow Imp
Page 19 and 20:
Page 21 and 22:
Page 23 and 24:
On the Prehistory of Angular Resolv
Page 25 and 26:
The Discovery and Very Basics of th
Page 27 and 28:
The Birth of the Semiconductor Supe
Page 29 and 30:
Number of papers 500 200 100 50 20
Page 31 and 32:
Appendix B: Solutions to Some of th
Page 33 and 34:
Solution to Problem 2.6 585 transfo
Page 35 and 36:
⎧ ⎫ 2apple ⎪⎨ cos (y z)
Page 37 and 38:
Partial solution to Problem 2.8 589
Page 39 and 40:
Page 41 and 42:
Page 43 and 44:
Solution to Problem 2.16 Solution t
Page 45 and 46:
Solution to Problem 2.20 597 to the
Page 47 and 48:
Therefore the result of I ′ on
Page 49 and 50:
Solution to Problem 3.2(c) Solution
Page 51 and 52:
Solution to Problem 3.5 603 Similar
Page 53 and 54:
Solution to Problem 3.7 (b and c) 6
Page 55 and 56:
u3. The above equation can be reduc
Page 57 and 58:
Solution to Problem 3.8 (a, c and d
Page 59 and 60:
Solution to Problem 3.11(a,b and c)
Page 61 and 62:
Solution to Problem 3.16 613 (1) Al
Page 63 and 64:
Solution to Problem 3.17 Solution t
Page 65 and 66:
Solution to Problem 3.17 617 forces
Page 67 and 68:
Solution to Problem 4.1 619 the abo
Page 69 and 70:
C dz ′ z ′ i° Solution to Pro
Page 71 and 72:
R -R A y E’-E y E’-E R x Soluti
Page 73 and 74:
Solution to Problem 5.3(a) 625 tion
Page 75 and 76:
Solution to Problem 5.5 627 To obta
Page 77 and 78:
Ùm ∞ NLOq 0 2 apple dq 0 ∞
Page 79 and 80:
plus Jz ·Fz Solution to Problem 5
Page 81 and 82:
Solution to Problem 6.7 633 axes. F
Page 83 and 84:
which can be found in standard text
Page 85 and 86:
Solution to Problem 6.11 637 The co
Page 87 and 88:
Solution to Problem 6.19(a) 639 if
Page 89 and 90:
Solution to Problem 6.19(a) 641 k.
Page 91 and 92:
Solution to Problem 6.19(a) 643 The
Page 93 and 94:
Solution to Problem 6.21 645 by a s
Page 95 and 96:
Solution to Problem 6.21 647 °25
Page 97 and 98:
Equating the two expressions for Nn
Page 99 and 100:
Solution to Problem 7.5 651 erties
Page 101 and 102:
A Short Cut to the Calculation of t
Page 103 and 104:
The diagram for the process labeled
Page 105 and 106:
Solution to Problem 7.12 657 or sca
Page 107 and 108:
Solution to Problem 8.1 Solution to
Page 109 and 110:
Solution to Problem 8.9 661 of 19.5
Page 111 and 112:
Solution to Problem 8.10 663 corres
Page 113 and 114:
Solution to Problem 9.2 Solution to
Page 115 and 116:
Solution to Problem 9.4 667 Table 9
Page 117 and 118:
Solution to Problem 9.14 669 Again
Page 119:
Solution to Problem 9.14 671 Note t
Page 122 and 123:
674 Appendix C A4.1.2 Historical Ba
Page 124 and 125:
676 Appendix C from the slopes of t
Page 126 and 127:
678 Appendix C Fig. A4.3 The electr
Page 128 and 129:
680 Appendix C Fig. A4.5 (a)-(d)The
Page 130 and 131:
682 Appendix C tion of alloying (se
Page 132 and 133:
684 Appendix C 17 -3 Hall Concentra
Page 135 and 136:
Appendix D: Recent Developments and
Page 137 and 138:
Chapter 1 689 ing up the glass to a
Page 139 and 140:
Chapter 2 691 Popov, V. N., Lambin,
Page 141 and 142:
Chapter 2 693 and zinc-blende group
Page 143 and 144:
Chapter 3 695 Inelastic x-ray Scatt
Page 145 and 146:
Chapter 4 697 results from a better
Page 147 and 148:
Chapter 5 699 K. Alberi, K. M. Yu,
Page 149 and 150:
Chapter 5 701 P. Ramvall, N. Carlss
Page 151 and 152:
Chapter 6 Ab initio calculations of
Page 153 and 154:
Chapter 6 705 Strain-induced birefr
Page 155 and 156:
Chapter 7 707 S. Baroni, S. de Giro
Page 157 and 158:
Chapter 7 709 W. Windl, K. Karch, P
Page 159 and 160:
Chapter 8 711 Strain Shift Coeffici
Page 161 and 162:
Chapter 9 713 Z. J. Zhao, F. Liu, L
Page 163 and 164:
Chapter 9 715 S. F. Ren, W. Cheng,
Page 165:
Chapter 9 717 V. P. Gusynin, S. G.
Page 168 and 169:
720 References tions II. Misfitting
Page 170 and 171: 722 References 2.30 R. M. Wentzcovi
Page 172 and 173: 724 References 3.23 R. M. Martin: E
Page 174 and 175: 726 References Nye J. F.: Physical
Page 176 and 177: 728 References Schubert E. F.: Dopi
Page 178 and 179: 730 References Ferry D. K.: Semicon
Page 180 and 181: 732 References 6.28 S. Logothetidis
Page 182 and 183: 734 References 6.73 H. D. Fuchs, C.
Page 184 and 185: 736 References 6.116 D. E. Aspnes:
Page 186 and 187: 738 References Chapter 7 7.1 W. Hei
Page 188 and 189: 740 References 7.43 G. Finkelstein,
Page 190 and 191: 742 References 7.82 J. R. Sandercoc
Page 192 and 193: 744 References 7.122 D. C. Reynolds
Page 194 and 195: 746 References 8.27 A. Goldmann, J.
Page 196 and 197: 748 References Electronic and Surfa
Page 198 and 199: 750 References 9.31 A. Pinczuk, G.
Page 200 and 201: 752 References 9.68 J. P. Palmier:
Page 203 and 204: Subject Index A ·-Sn (gray tin) 95
Page 205 and 206: C c(2 × 8)(111) surface of Ge - di
Page 207 and 208: Dielectric function 117, 246, 253,
Page 209 and 210: Emission rate vs frequency in Ge 34
Page 211 and 212: Galena (PbS) 1 Gamma-ray detectors
Page 213 and 214: Insulators 1 Integral quantum Hall
Page 215 and 216: - - vs T 222 - temperature dependen
Page 217 and 218: - frequency 253, 306, 335 - - of va
Page 219: Resonant Raman profile 403 Resonant
Page 223: - structure 142 - symmetry operatio
show all

10. Appendix

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?