12.02.2014 Views

Radar System Engineering

Radar System Engineering

Radar System Engineering

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

412 R-F COMPONENTS [SEC.114<br />

order to obtain a much lower beat frequency which can be amplified.<br />

A more complete and integrated discussion of microwave receivers is<br />

reserved for the next chapter, but for the sake of continuity the components<br />

of the receiver which handle microwaves are treated here in conjunction<br />

with other r-f components.<br />

11.6. The Mixer Crystal.-Since no satisfactory amplifier for microwaves<br />

exists, the conversion to intermediate frequency must be made at<br />

—<br />

“m=<br />

.1<br />

a. Pin end<br />

a. Sylvania b, Western Electric<br />

FIG. 11. 19.—Microwave mixer crystals.<br />

the low level of received signal powers. It is important, therefore, that<br />

the nonlinear element be as efficient as possible, and that a minimum<br />

amount of added noise be introduced. The most satisfactory device<br />

that has been found is the rectifying contact between a metallic point<br />

and a crystal of silicon.’ For protection and stability the silicon and the<br />

“cat whisker” are sealed up in a cartridge. The term “crystal” ordinarily<br />

refers to the whole assembly, a cross-section view of which is<br />

shown in Fig. 11”19.<br />

The d-c characteristic of a crystal has the form shown in Fig. 11“20.<br />

An equivalent circuit that accounts for the r-f properties is shown in<br />

Fig. 11.21. The nonlinear resistance of the rectifying contact is denoted<br />

by r.. In parallel with it is the capacity C of the boundary layer of the<br />

1CrystalRectifiers, Vol. 15. lbdiat<br />

ion Laboratory Series.

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!