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5.3 Excitation Circuits 169 Fig. 5.16. Current source with a monolithic voltage reference. regulator keeps the voltage drop across R s precisely equal to 2.5 V, thus assuring that the current through that resistor and, subsequently, through the load is constant. The load current is defined as i out = 2.5V R s . (5.21) 5.3.2 Voltage References A voltage reference is an electronic device which generates constant voltage that is little affected by variations in power supply, temperature, load, aging, and other factors. There are several techniques known for the generation of such voltages. Many voltage references are available in monolithic forms; however, in low-cost applications, especially in consumer products, a simple device known as a zener diode is often employed. A zener diode has a constant voltage drop in a circuit when provided with a fairly constant current derived from a higher voltage elsewhere within the circuit. The active portion of a zener diode is a reverse-biased semiconductor p-n junction. When the diode is forward biased (the p region is more positive), there is little resistance to current flow. Actually, a forward-biased zener diode looks very much like a conventional semiconductor diode (Fig. 5.17A). When the diode is reverse biased (minus is at the anode and plus is at the cathode), very little current flows through it if the applied voltage is less than V z . A reverse saturation current is a small leakage which is almost independent of the applied voltage. When the reverse voltage approaches the breakdown voltage V z , the reverse current increases rapidly and, if not limited, will result in the diode overheating and destruction. For that reason, zener diodes usually are used with current-limiting components, such as resistors, positive temperature coefficient (PTC) thermistors or current sources. The most common circuit with a zener diode is shown in Fig. 5.17B. In this circuit, the diode is connected in parallel with its load, thus implying the name “shunting reference”. If the load consumes current i L , the current i should be sufficiently high to be shared between the zener diode (i z ) and the load. The zener voltage decreases as temperature of the junction rises.
170 5 Interface Electronic Circuits (A) (B) Fig. 5.17. Zener diode: (A) a volt–ampere characteristic; (B) a shunting-type voltage reference. Zener diodes fall into three general classifications: regulator diodes, reference diodes, and transient voltage suppressors. Regulator diodes are normally employed in power supplies where a nearly constant dc output voltage is required despite relatively large changes in input voltage or load impedance. Such devices are available with a wide range of voltage and power ratings, making them suitable for a wide variety of electronic equipments. Regulator diodes, however, have one limitation: they are temperature sensitive. Therefore, in applications in which the output voltage must remain within narrow limits during input-voltage, load-current, and temperature changes, a temperature-compensated regulator diode, called a reference diode, is required. It makes sense to take advantage of the differing thermal characteristics of forward- and reverse-biased silicon p-n junctions. Like any silicon diode (see Section 16.3 of Chapter 16), a forward-biased junction has a negative temperature coefficient of approximately −2 mV/ ◦ C, whereas a reverse-biased junction has positive temperature coefficient ranging from about 2 to 6 mV/ ◦ C depending on the current and the diode type. Therefore, it is possible, by a selective combination of forward- and reverse-biased junctions, to fabricate a device with a very low overall temperature coefficient (Fig. 5.18). The voltage changes of the two junctions are equal and opposite only at the specified current. For any other value of current, the temperature compensation may not be ideally accomplished. Nevertheless, even a simple backto-back connection of two zener diodes of the same type may significantly improve the overall temperature stability over a rather broad range of currents and temper- Fig. 5.18. Temperature compensation of a zener diode.
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HANDBOOK OF MODERN SENSORS PHYSICS,
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HANDBOOK OF MODERN SENSORS PHYSICS,
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To the memory of my father
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Preface Seven years have passed sin
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Contents Preface ..................
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Contents XI 4.5 Lenses ............
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Contents XIII 7.7.1 Micropower Impu
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Contents XV 15 Radiation Detectors
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Contents XVII Table A.9 Physical Pr
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1 Data Acquisition “It’s as lar
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1.1 Sensors, Signals, and Systems 3
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1.1 Sensors, Signals, and Systems 5
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1.2 Sensor Classification 7 oscillo
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1.3 Units of Measurements 9 Table 1
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Table 1.7. SI Basic Units Reference
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2 Sensor Characteristics “O, what
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2.2 Span (Full-Scale Input) 15 Fig.
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2.4 Accuracy 17 2.4 Accuracy Avery
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2.6 Calibration Error 19 To compute
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2.8 Nonlinearity 21 Fig. 2.4. Trans
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2.12 Resolution 23 (A) (B) Fig. 2.7
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2.16 Dynamic Characteristics 25 2.1
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2.16 Dynamic Characteristics 27 Sub
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2.17 Environmental Factors 29 2.17
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2.18 Reliability 31 guide. For inst
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2.20 Uncertainty 33 • Thermal sho
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Table 2.2. Uncertainty Budget for T
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3 Physical Principles of Sensing
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3.1 Electric Charges, Fields, and P
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3.2 Capacitance 45 The capacitor ma
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3.2 Capacitance 47 (A) (B) Fig. 3.6
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3.2 Capacitance 49 h 0 (A) (B) Fig.
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3.3 Magnetism 51 N S S N (A) (B) Fi
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3.3 Magnetism 53 electric charge ca
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3.3 Magnetism 55 3.3.3 Toroid Anoth
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3.4 Induction 57 • Changing the o
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3.5 Resistance 59 Fig. 3.16. Voltag
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3.5 Resistance 61 For pure resistan
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3.5 Resistance 63 resistor) and the
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3.5 Resistance 65 Fig. 3.19. Strain
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3.6 Piezoelectric Effect 67 (A) (B)
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3.6 Piezoelectric Effect 69 Another
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3.6 Piezoelectric Effect 71 Another
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3.6 Piezoelectric Effect 73 absorpt
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3.6 Piezoelectric Effect 75 that en
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3.7 Pyroelectric Effect 77 circuit
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3.7 Pyroelectric Effect 79 through
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3.7 Pyroelectric Effect 81 Fig. 3.2
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3.8 Hall Effect 83 Fig. 3.30. Hall
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Table 3.2. Typical Characteristics
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3.9 Seebeck and Peltier Effects 87
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3.10 Sound Waves 93 If we consider
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3.11 Temperature and Thermal Proper
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3.11 Temperature and Thermal Proper
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3.12 Heat Transfer 99 to about 35
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3.12 Heat Transfer 101 (A) (B) Fig.
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3.12 Heat Transfer 103 Fig. 3.41. S
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3.12 Heat Transfer 105 Fig. 3.42. S
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3.12 Heat Transfer 107 Fig. 3.44. W
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3.12 Heat Transfer 109 (A) (B) Fig.
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3.13 Light 111 [38] whose emissivit
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3.14 Dynamic Models of Sensor Eleme
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Page 138 and 139: References 119 specified and three
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Page 142 and 143: 124 4 Optical Components of Sensors
Page 168 and 169: 150 Optical Components of Sensors 1
Page 170 and 171: 5 Interface Electronic Circuits 5.1
Page 172 and 173: 5.1 Input Characteristics of Interf
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Page 176 and 177: 5.2 Amplifiers 157 (A) (B) Fig. 5.5
Page 178 and 179: 5.2 Amplifiers 159 Fig. 5.7. Voltag
Page 180 and 181: 5.2 Amplifiers 161 (A) (B) Fig. 5.9
Page 182 and 183: 5.2 Amplifiers 163 Fig. 5.11. An eq
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Page 190 and 191: 5.3 Excitation Circuits 171 atures.
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Page 194 and 195: 5.4 Analog-to-Digital Converters 17
Page 196 and 197: Table 5.2. Binary Bit Weights and R
Page 206 and 207: 5.5 Direct Digitization and Process
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Page 210 and 211: 5.6 Ratiometric Circuits 191 (A) (B
Page 212 and 213: 5.7 Bridge Circuits 193 determine t
Page 214 and 215: 5.7 Bridge Circuits 195 Fig. 5.38.
Page 216 and 217: 5.7 Bridge Circuits 197 Fig. 5.39.
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5.9 Noise in Sensors and Circuits 2
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5.9 Noise in Sensors and Circuits 2
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5.10 Batteries for Low Power Sensor
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References 225 nickel-metal hydrate
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6 Occupancy and Motion Detectors Se
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6.2 Microwave Motion Detectors 229
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6.2 Microwave Motion Detectors 231
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6.3 Capacitive Occupancy Detectors
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6.3 Capacitive Occupancy Detectors
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6.4 Triboelectric Detectors 237 6.4
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6.5 Optoelectronic Motion Detectors
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and the facet pitch is 6.5 Optoelec
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References 251 Fig. 6.17. Calculate
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7 Position, Displacement, and Level
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7.1 Potentiometric Sensors 255 (A)
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7.2 Gravitational Sensors 257 (A) (
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7.3 Capacitive Sensors 259 (A) (B)
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7.3 Capacitive Sensors 261 Fig. 7.7
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7.4 Inductive and Magnetic Sensors
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7.5 Optical Sensors 275 Therefore,
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7.5 Optical Sensors 277 (A) (B) (C)
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7.5 Optical Sensors 279 (A) (B) Fig
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7.5 Optical Sensors 281 Fig. 7.32.
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7.5 Optical Sensors 283 (A) (B) (C)
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7.5 Optical Sensors 285 is proporti
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7.6 Ultrasonic Sensors 287 (A) (B)
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7.7 Radar Sensors 289 (A) (B) Fig.
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7.7 Radar Sensors 291 (A) (B) Fig.
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7.8 Thickness and Level Sensors 293
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References 299 8. Dakin, J. P., Wad
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8 Velocity and Acceleration Acceler
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8.1 Accelerometer Characteristics 3
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8.2 Capacitive Accelerometers 305 a
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8.3 Piezoresistive Accelerometers 3
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8.5 Thermal Accelerometers 309 Fig.
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8.5 Thermal Accelerometers 311 forc
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8.6 Gyroscopes 313 8.6 Gyroscopes N
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8.6 Gyroscopes 315 (A) (B) Fig. 8.1
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8.6 Gyroscopes 317 Products Company
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8.7 Piezoelectric Cables 319 (A) (B
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References 321 (A) (B) Fig. 8.16.Ap
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9 Force, Strain, and Tactile Sensor
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9.1 Strain Gauges 325 (A) (B) Fig.
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9.2 Tactile Sensors 327 9.2 Tactile
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9.2 Tactile Sensors 329 (A) (B) Fig
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9.2 Tactile Sensors 331 Fig. 9.7. P
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9.2 Tactile Sensors 333 Fig. 9.9. T
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9.3 Piezoelectric Force Sensors 335
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References 337 14. Karrer, E. and L
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10 Pressure Sensors “To learn som
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10.3 Mercury Pressure Sensor 341 1
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10.4 Bellows, Membranes, and Thin P
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10.5 Piezoresistive Sensors 345 Fig
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10.5 Piezoresistive Sensors 347 bri
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10.6 Capacitive Sensors 349 (A) (B)
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10.7 VRP Sensors 351 (A) (B) Fig. 1
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10.8 Optoelectronic Sensors 353 Fig
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10.9 Vacuum Sensors 355 (A) (B) Fig
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References 357 (A) (B) (C) Fig. 10.
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11 Flow Sensors It’s a simple tas
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11.2 Pressure Gradient Technique 36
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11.3 Thermal Transport Sensors 363
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11.3 Thermal Transport Sensors 365
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11.4 Ultrasonic Sensors 367 A senso
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11.4 Ultrasonic Sensors 369 Fig. 11
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induced in the liquid. The magnitud
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11.6 Microflow Sensors 373 (A) (B)
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11.7 Breeze Sensor 375 (A) (B) Fig.
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11.9 Drag Force Flow Sensors 377 Wi
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References 379 11. Philip-Chandy, R
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12 Acoustic Sensors “Your ears wi
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12.3 Fiber-Optic Microphone 383 (A)
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12.4 Piezoelectric Microphones 385
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12.5 Electret Microphones 387 Fig.
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12.6 Solid-State Acoustic Detectors
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References 391 References 1. Hohm,
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13 Humidity and Moisture Sensors 13
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13.1 Concept of Humidity 395 Table
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13.2 Capacitive Sensors 397 Fig. 13
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13.3 Electrical Conductivity Sensor
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13.4 Thermal Conductivity Sensor 40
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13.6 Oscillating Hygrometer 403 chi
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References 405 9. Jachowicz, R. S.
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14 Light Detectors “There is noth
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14.1 Introduction 409 Table 14.1. B
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14.2 Photodiodes 411 Maximum revers
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14.2 Photodiodes 413 when i = 0), w
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14.2 Photodiodes 415 (A) (B) (C) Fi
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14.2 Photodiodes 417 Fig. 14.9. Res
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14.3 Phototransistor 419 Fig. 14.12
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14.4 Photoresistors 421 (A) (B) Fig
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14.5 Cooled Detectors 423 (A) (B) F
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14.6 Thermal Detectors 425 Table 14
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14.6 Thermal Detectors 427 Fig. 14.
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Table 14.3. Typical Specifications
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14.6 Thermal Detectors 431 A dual e
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14.6 Thermal Detectors 433 Fig. 14.
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14.6 Thermal Detectors 435 (A) (B)
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14.6 Thermal Detectors 437 Section
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14.7 Gas Flame Detectors 439 P = V
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References 441 housing assures wide
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15 Radiation Detectors Figure 3.41
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15.1 Scintillating Detectors 445 Fi
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15.2 Ionization Detectors 447 emitt
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15.2 Ionization Detectors 449 Fig.
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15.2 Ionization Detectors 451 parti
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15.2 Ionization Detectors 453 There
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References 455 the pure intrinsic t
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16 Temperature Sensors When a scien
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16 Temperature Sensors 459 from whi
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16.1 Thermoresistive Sensors 461 2.
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16.1 Thermoresistive Sensors 463 Ta
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16.1 Thermoresistive Sensors 465 Fi
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16.1 Thermoresistive Sensors 467 pr
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16.1 Thermoresistive Sensors 475 (m
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16.2 Thermoelectric Contact Sensors
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16.3 Semiconductor P-N Junction Sen
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16.4 Optical Temperature Sensors 49
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16.4 Optical Temperature Sensors 49
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16.5 Acoustic Temperature Sensor 49
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References 497 plate—the so-calle
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17 Chemical Sensors 1 Chemical sens
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17.3 Classification of Chemical-Sen
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17.4 Direct Sensors 503 17.4 Direct
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17.4 Direct Sensors 505 voltage e.
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17.4 Direct Sensors 507 This reacti
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17.4 Direct Sensors 509 (A) (B) Fig
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17.4 Direct Sensors 511 µm thick a
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17.5 Complex Sensors 513 Fig. 17.11
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17.5 Complex Sensors 515 Fig. 17.12
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17.5 Complex Sensors 517 frequency
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Table 17.1. SAW Chemical Sensors 17
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17.6 Chemical Sensors Versus Instru
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References 531 13. LaCourse, W.R. P
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18 Sensor Materials and Technologie
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18.1 Materials 535 etching is a key
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18.1 Materials 537 Fig. 18.3. The a
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18.1 Materials 539 The following is
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18.1 Materials 541 should be consid
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18.2 Surface Processing 543 sensor
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18.2 Surface Processing 545 On a co
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18.3 Nano-Technology 547 6000-Å la
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18.3 Nano-Technology 549 exposed to
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18.3 Nano-Technology 551 Fig. 18.10
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18.3 Nano-Technology 553 (A) (B) Fi
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References 555 Fig. 18.17. Bonding
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Appendix Table A.1. Chemical Symbol
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Table A.4. SI Conversion Multiples
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Table A.4 Continued Light cd/in. 2
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Table A.4 Continued Cup 2.36588 ×
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Appendix 565 Table A.7. Some Materi
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Appendix 567 Table A.11. Thermoelec
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Table A.14. Mechanical Properties o
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Appendix 571 Table A.18. Typical Em
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Table A.20. Characteristics of C-Zn
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Table A.23 Continued Manufacturer P
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Table A.25. Properties of Glasses S
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Index α-particles, 443 A/D, 175, 1
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Index 581 Coulomb’s law, 40 cross
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Index 583 H 2 O, 108 Hall, 82 Hall
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Index 585 occupancy sensors, 227 od
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Index 587 SAW, 75, 388, 404, 496, 5
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Index 589 velocity sensor, 302 vert
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