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handbook of modern sensors

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554 18 Sensor Materials and Technologies<br />

Fig. 18.16. Lift-<strong>of</strong>f technique.<br />

(A)<br />

(B)<br />

(C)<br />

(D)<br />

(E)<br />

18.3.2.1.5 Lift-Off<br />

Lift-<strong>of</strong>f is a stenciling technique <strong>of</strong>ten used to pattern noble metal films. There are a<br />

number <strong>of</strong> different techniques; the one outlined here is an assisted lift <strong>of</strong>f method. A<br />

thin film <strong>of</strong> the assisting material (e.g., oxide) is deposited. A layer <strong>of</strong> resist is put over<br />

this and patterned, as for photolithography, to expose the oxide in the pattern desired<br />

for the metal (Fig. 18.16A). The oxide is then wet etched so as to undercut the resist<br />

(Fig. 18.16B). The metal is then deposited on the wafer, typically by a process known<br />

as evaporation (Fig. 18.16C). The metal pattern is effectively stenciled through the<br />

gaps in the resist, which is then removed, lifting <strong>of</strong>f the unwanted metal with it (Fig.<br />

18.16D). The assisting layer is then stripped <strong>of</strong>f too, leaving the metal pattern alone<br />

(Fig. 18.16E).<br />

18.3.2.2 Wafer bonding<br />

There are a number <strong>of</strong> different methods available for bonding micromachined silicon<br />

wafers together, or to other substrates, to form larger more complex devices.Amethod<br />

<strong>of</strong> bonding silicon to glass that appears to be gaining in popularity is anodic bonding<br />

(electrostatic bonding). The silicon wafer and glass substrate are brought together and

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