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References 251 Fig. 6.17. Calculated and experimental amplitudes of output signals in a PIR detector. There are several conclusions which can be drawn from Eq. (6.20). The first part of the equation (the first ratio) characterizes a detector and the rest relates to an object. The pyroelectric current i is directly proportional to the temperature difference (thermal contrast) between the object and its surroundings. It is also proportional to the surface area of the object which faces the detector. A contribution of the ambient temperature T a is not as strong as it might appear from its third power. The ambient temperature must be entered in Kelvin; hence, its variations become relatively small with respect to the scale. The thinner the sensing element, the more sensitive is the detector. The lens area also directly affects signal magnitude. On the other hand, pyroelectric current does not depend on the sensor’s area as long as the lens focuses the entire image on a sensing element. To evaluate Eq. (6.20) further, let us calculate the voltage across the bias resistor. That voltage can be used as an indication of motion. We select a pyroelectric PVDF film sensor with typical properties: P = 25 µC/K m 2 , c = 2.4 × 10 6 J/m 3 K, h = 25 µm, lens area a = 1cm 2 , γ = 0.6, and the bias resistor R = 10 9 (1 G). We will assume that the object’s surface temperature is 27 ◦ C and the surface area b = 0.1 m2. The ambient temperature t a = 20 ◦ C. The output voltage is calculated from Eq. (6.20) as a function of distance L from the detector to the object and is shown in Fig. 6.17. A graph for Fig. 6.17 was calculated under the assumption that the optical system provides a sharp image at all distances and that the image is no larger that the sensing element area. In practice, this is not always true, especially at shorter distances, where the image is not only out of focus but also may overlap the out-of-phase parts of a symmetrical sensor. The reduction in the signal amplitude at shorter distances becomes apparent: The voltage does not go as high as in the calculated curve. References 1. Blumenkrantz, S. Personal and Organizational Security Handbook. Government Data Publications, Washington, DC, 1989. 2. Ryser, P. and Pfister, G. Optical fire and security technology: Sensor principles and detection intelligence. In: Transducers’91. International conference on Solid-
252 Occupancy and Motion Detectors State Sensors and Actuators. Digest of Technical Papers. IEEE, New York, 1991, pp. 579–583. 3. Long, D.J. Occupancy detector apparatus for automotive safety system. U.S. patent 3,898,472, 1975. 4. Fraden, J.Apparatus and method for detecting movement of an object, U.S. patent 5,019,804, 1991. 5. Fraden, J. Motion discontinuance detection system and method. U.S. patent 4,450,351, 1984. 6. Fraden, J. Toy including motion-detecting means for activating same. U.S. patent 4,479,329, 1984. 7. Fraden, J. Motion detector. U.S. patent 4,769,545,1988. 8. Fraden, J. Active infrared motion detector and method for detecting movement. U.S. patent 4,896,039, 1990. 9. Fraden, J. Active far infrared detectors. In: Temperature. Its Measurement and Control in Science and Industry. American Institute of Physics, New York, 1992, Vol. 6, Part 2, pp. 831–836.
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HANDBOOK OF MODERN SENSORS PHYSICS,
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HANDBOOK OF MODERN SENSORS PHYSICS,
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To the memory of my father
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Preface Seven years have passed sin
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Contents Preface ..................
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Contents XI 4.5 Lenses ............
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Contents XIII 7.7.1 Micropower Impu
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Contents XV 15 Radiation Detectors
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Contents XVII Table A.9 Physical Pr
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1 Data Acquisition “It’s as lar
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1.1 Sensors, Signals, and Systems 3
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1.1 Sensors, Signals, and Systems 5
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1.2 Sensor Classification 7 oscillo
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1.3 Units of Measurements 9 Table 1
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Table 1.7. SI Basic Units Reference
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2 Sensor Characteristics “O, what
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2.2 Span (Full-Scale Input) 15 Fig.
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2.4 Accuracy 17 2.4 Accuracy Avery
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2.6 Calibration Error 19 To compute
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2.8 Nonlinearity 21 Fig. 2.4. Trans
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2.12 Resolution 23 (A) (B) Fig. 2.7
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2.16 Dynamic Characteristics 25 2.1
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2.16 Dynamic Characteristics 27 Sub
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2.17 Environmental Factors 29 2.17
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2.18 Reliability 31 guide. For inst
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2.20 Uncertainty 33 • Thermal sho
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Table 2.2. Uncertainty Budget for T
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3 Physical Principles of Sensing
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3.1 Electric Charges, Fields, and P
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3.2 Capacitance 45 The capacitor ma
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3.2 Capacitance 47 (A) (B) Fig. 3.6
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3.2 Capacitance 49 h 0 (A) (B) Fig.
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3.3 Magnetism 51 N S S N (A) (B) Fi
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3.3 Magnetism 53 electric charge ca
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3.3 Magnetism 55 3.3.3 Toroid Anoth
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3.4 Induction 57 • Changing the o
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3.5 Resistance 59 Fig. 3.16. Voltag
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3.5 Resistance 61 For pure resistan
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3.5 Resistance 63 resistor) and the
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3.5 Resistance 65 Fig. 3.19. Strain
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3.6 Piezoelectric Effect 67 (A) (B)
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3.6 Piezoelectric Effect 69 Another
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3.6 Piezoelectric Effect 71 Another
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3.6 Piezoelectric Effect 73 absorpt
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3.6 Piezoelectric Effect 75 that en
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3.7 Pyroelectric Effect 77 circuit
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3.7 Pyroelectric Effect 79 through
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3.7 Pyroelectric Effect 81 Fig. 3.2
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3.8 Hall Effect 83 Fig. 3.30. Hall
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Table 3.2. Typical Characteristics
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3.9 Seebeck and Peltier Effects 87
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3.10 Sound Waves 93 If we consider
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3.11 Temperature and Thermal Proper
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3.11 Temperature and Thermal Proper
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3.12 Heat Transfer 99 to about 35
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3.12 Heat Transfer 101 (A) (B) Fig.
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3.12 Heat Transfer 103 Fig. 3.41. S
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3.12 Heat Transfer 105 Fig. 3.42. S
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3.12 Heat Transfer 107 Fig. 3.44. W
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3.12 Heat Transfer 109 (A) (B) Fig.
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3.13 Light 111 [38] whose emissivit
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3.14 Dynamic Models of Sensor Eleme
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References 119 specified and three
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References 121 34. Thomson, W. On t
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124 4 Optical Components of Sensors
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150 Optical Components of Sensors 1
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5 Interface Electronic Circuits 5.1
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5.1 Input Characteristics of Interf
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5.1 Input Characteristics of Interf
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5.2 Amplifiers 157 (A) (B) Fig. 5.5
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5.2 Amplifiers 159 Fig. 5.7. Voltag
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5.2 Amplifiers 161 (A) (B) Fig. 5.9
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5.2 Amplifiers 163 Fig. 5.11. An eq
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5.3 Excitation Circuits 165 5.3.1 C
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5.3 Excitation Circuits 167 (A) (B)
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5.3 Excitation Circuits 169 Fig. 5.
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5.3 Excitation Circuits 171 atures.
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5.3 Excitation Circuits 173 (A) (B)
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5.4 Analog-to-Digital Converters 17
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Table 5.2. Binary Bit Weights and R
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5.5 Direct Digitization and Process
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5.5 Direct Digitization and Process
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5.6 Ratiometric Circuits 191 (A) (B
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5.7 Bridge Circuits 193 determine t
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5.7 Bridge Circuits 195 Fig. 5.38.
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5.7 Bridge Circuits 197 Fig. 5.39.
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It can be solved for the temperatur
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Page 244 and 245: References 225 nickel-metal hydrate
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Page 272 and 273: 7 Position, Displacement, and Level
Page 274 and 275: 7.1 Potentiometric Sensors 255 (A)
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8 Velocity and Acceleration Acceler
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8.1 Accelerometer Characteristics 3
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8.2 Capacitive Accelerometers 305 a
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8.3 Piezoresistive Accelerometers 3
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8.5 Thermal Accelerometers 309 Fig.
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8.5 Thermal Accelerometers 311 forc
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8.6 Gyroscopes 313 8.6 Gyroscopes N
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8.6 Gyroscopes 315 (A) (B) Fig. 8.1
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8.6 Gyroscopes 317 Products Company
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8.7 Piezoelectric Cables 319 (A) (B
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References 321 (A) (B) Fig. 8.16.Ap
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9 Force, Strain, and Tactile Sensor
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9.1 Strain Gauges 325 (A) (B) Fig.
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9.2 Tactile Sensors 327 9.2 Tactile
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9.2 Tactile Sensors 329 (A) (B) Fig
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9.2 Tactile Sensors 331 Fig. 9.7. P
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9.2 Tactile Sensors 333 Fig. 9.9. T
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9.3 Piezoelectric Force Sensors 335
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References 337 14. Karrer, E. and L
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10 Pressure Sensors “To learn som
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10.3 Mercury Pressure Sensor 341 1
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10.4 Bellows, Membranes, and Thin P
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10.5 Piezoresistive Sensors 345 Fig
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10.5 Piezoresistive Sensors 347 bri
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10.6 Capacitive Sensors 349 (A) (B)
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10.7 VRP Sensors 351 (A) (B) Fig. 1
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10.8 Optoelectronic Sensors 353 Fig
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10.9 Vacuum Sensors 355 (A) (B) Fig
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References 357 (A) (B) (C) Fig. 10.
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11 Flow Sensors It’s a simple tas
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11.2 Pressure Gradient Technique 36
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11.3 Thermal Transport Sensors 363
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11.3 Thermal Transport Sensors 365
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11.4 Ultrasonic Sensors 367 A senso
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11.4 Ultrasonic Sensors 369 Fig. 11
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induced in the liquid. The magnitud
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11.6 Microflow Sensors 373 (A) (B)
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11.7 Breeze Sensor 375 (A) (B) Fig.
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11.9 Drag Force Flow Sensors 377 Wi
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References 379 11. Philip-Chandy, R
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12 Acoustic Sensors “Your ears wi
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12.3 Fiber-Optic Microphone 383 (A)
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12.4 Piezoelectric Microphones 385
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12.5 Electret Microphones 387 Fig.
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12.6 Solid-State Acoustic Detectors
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References 391 References 1. Hohm,
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13 Humidity and Moisture Sensors 13
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13.1 Concept of Humidity 395 Table
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13.2 Capacitive Sensors 397 Fig. 13
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13.3 Electrical Conductivity Sensor
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13.4 Thermal Conductivity Sensor 40
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13.6 Oscillating Hygrometer 403 chi
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References 405 9. Jachowicz, R. S.
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14 Light Detectors “There is noth
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14.1 Introduction 409 Table 14.1. B
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14.2 Photodiodes 411 Maximum revers
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14.2 Photodiodes 413 when i = 0), w
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14.2 Photodiodes 415 (A) (B) (C) Fi
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14.2 Photodiodes 417 Fig. 14.9. Res
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14.3 Phototransistor 419 Fig. 14.12
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14.4 Photoresistors 421 (A) (B) Fig
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14.5 Cooled Detectors 423 (A) (B) F
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14.6 Thermal Detectors 425 Table 14
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14.6 Thermal Detectors 427 Fig. 14.
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Table 14.3. Typical Specifications
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14.6 Thermal Detectors 431 A dual e
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14.6 Thermal Detectors 433 Fig. 14.
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14.6 Thermal Detectors 435 (A) (B)
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14.6 Thermal Detectors 437 Section
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14.7 Gas Flame Detectors 439 P = V
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References 441 housing assures wide
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15 Radiation Detectors Figure 3.41
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15.1 Scintillating Detectors 445 Fi
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15.2 Ionization Detectors 447 emitt
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15.2 Ionization Detectors 449 Fig.
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15.2 Ionization Detectors 451 parti
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15.2 Ionization Detectors 453 There
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References 455 the pure intrinsic t
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16 Temperature Sensors When a scien
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16 Temperature Sensors 459 from whi
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16.1 Thermoresistive Sensors 461 2.
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16.1 Thermoresistive Sensors 463 Ta
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16.1 Thermoresistive Sensors 465 Fi
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16.1 Thermoresistive Sensors 467 pr
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16.1 Thermoresistive Sensors 475 (m
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16.2 Thermoelectric Contact Sensors
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16.3 Semiconductor P-N Junction Sen
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16.4 Optical Temperature Sensors 49
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16.4 Optical Temperature Sensors 49
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16.5 Acoustic Temperature Sensor 49
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References 497 plate—the so-calle
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17 Chemical Sensors 1 Chemical sens
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17.3 Classification of Chemical-Sen
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17.4 Direct Sensors 503 17.4 Direct
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17.4 Direct Sensors 505 voltage e.
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17.4 Direct Sensors 507 This reacti
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17.4 Direct Sensors 509 (A) (B) Fig
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17.4 Direct Sensors 511 µm thick a
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17.5 Complex Sensors 513 Fig. 17.11
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17.5 Complex Sensors 515 Fig. 17.12
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17.5 Complex Sensors 517 frequency
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Table 17.1. SAW Chemical Sensors 17
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17.6 Chemical Sensors Versus Instru
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References 531 13. LaCourse, W.R. P
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18 Sensor Materials and Technologie
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18.1 Materials 535 etching is a key
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18.1 Materials 537 Fig. 18.3. The a
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18.1 Materials 539 The following is
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18.1 Materials 541 should be consid
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18.2 Surface Processing 543 sensor
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18.2 Surface Processing 545 On a co
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18.3 Nano-Technology 547 6000-Å la
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18.3 Nano-Technology 549 exposed to
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18.3 Nano-Technology 551 Fig. 18.10
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18.3 Nano-Technology 553 (A) (B) Fi
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References 555 Fig. 18.17. Bonding
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Appendix Table A.1. Chemical Symbol
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Table A.4. SI Conversion Multiples
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Table A.4 Continued Light cd/in. 2
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Table A.4 Continued Cup 2.36588 ×
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Appendix 565 Table A.7. Some Materi
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Appendix 567 Table A.11. Thermoelec
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Table A.14. Mechanical Properties o
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Appendix 571 Table A.18. Typical Em
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Table A.20. Characteristics of C-Zn
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Table A.23 Continued Manufacturer P
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Table A.25. Properties of Glasses S
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Index α-particles, 443 A/D, 175, 1
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Index 581 Coulomb’s law, 40 cross
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Index 583 H 2 O, 108 Hall, 82 Hall
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Index 585 occupancy sensors, 227 od
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Index 587 SAW, 75, 388, 404, 496, 5
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Index 589 velocity sensor, 302 vert
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