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handbook of modern sensors

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310 8 Velocity and Acceleration<br />

(A)<br />

(B)<br />

Fig. 8.7. Thermal accelerometer: (A) cross section <strong>of</strong> the heated part; (B) an accelerometer<br />

design (shown without the ro<strong>of</strong>) (adapted from [5])<br />

The temperature at any point in the cantilever beam supporting the seismic mass 3<br />

depends on its distance from the support x and the gaps at the heat sinks. It can be<br />

found from<br />

d 2 T<br />

dx 2 − λ2 T = 0, (8.11)<br />

where<br />

√<br />

K g (M 1 + M 2 )<br />

λ =<br />

, (8.12)<br />

L si DM 1 M 2<br />

where K g and K si are thermal conductivities <strong>of</strong> gas and silicon, respectively, and D<br />

is the thickness <strong>of</strong> a cantilever beam. For a boundary conditions, where the heat sink<br />

temperature is zero, a solution <strong>of</strong> Eq. (8.11) is<br />

P sinh(λx)<br />

T(x)=<br />

WDK si λ cosh(λL) , (8.13)<br />

where W and L is the width and length <strong>of</strong> the beam, respectively, and P is the thermal<br />

power. To measure that temperature, a temperature sensor can be deposited on the<br />

beam. It can be done by integrating silicone diodes into the beam, 4 or by forming<br />

serially connected thermocouples (a thermopile) on the beam surface. Eventually, the<br />

measured beam temperature in the form <strong>of</strong> an electrical signal is a measure <strong>of</strong> acceleration.<br />

The sensitivity <strong>of</strong> a thermal accelerometer (about 1% <strong>of</strong> change in the output<br />

signal per g) is somewhat smaller than that <strong>of</strong> the capacitive or piezoelectric types;<br />

however, it is much less susceptible to such interferences as ambient temperature or<br />

electromagnetic and electrostatic noise.<br />

8.5.2 Heated-Gas Accelerometer<br />

Another interesting accelerometer uses gas as a seismic mass. The heated-gas accelerometer<br />

(HGA) was developed by MEMSIC Corporation (www.memsic.com). It<br />

is fabricated on a micromachined CMOS chip and is a complete biaxial motion measurement<br />

system. The principle <strong>of</strong> operation <strong>of</strong> the device is based on heat transfer by<br />

3 Here, we assume steady-state conditions and neglect radiative and convective heat transfers.<br />

4 See Chapter 16 for a description <strong>of</strong> a Si diode as a temperature sensor.

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