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handbook of modern sensors

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398 13 Humidity and Moisture Sensors<br />

Fig. 13.3. Capacitive moisture sensing system.<br />

(A)<br />

(B)<br />

Fig. 13.4. Capacitive thin-film humidity sensor: (A) interdigitized electrodes form capacitor<br />

plates; (B) cross section <strong>of</strong> the sensor.<br />

<strong>of</strong> moisture measurement is quite useful in the process control <strong>of</strong> pharmaceutical<br />

products. The dielectric constants <strong>of</strong> most medical tablets is quite low (between 2.0<br />

and 5.0) as compared with that <strong>of</strong> water (Fig. 3.7 <strong>of</strong> Chapter 3). The sampled material<br />

is placed between two test plates which form a capacitor connected into an LC<br />

oscillating circuit. The frequency is measured and related to the moisture. The best<br />

way to reduce variations attributed to environmental conditions, such as temperature<br />

and room humidity, is the use <strong>of</strong> a differential technique; that is, the frequency shift<br />

f = f 0 − f 1 is calculated, where f 0 and f 1 are frequencies produced by the empty<br />

container and that filled with the sampled material, respectively. The method has<br />

some limitations; for instance, its accuracy is poor when measuring moistures below<br />

0.5%, the sample must be clean <strong>of</strong> foreign particles having relatively high dielectric<br />

constants (e.g., metal and plastic objects, a packing density), and a fixed sample<br />

geometry must be maintained.<br />

A thin-film capacitive humidity sensor can be fabricated on a silicon substrate [8].<br />

A layer <strong>of</strong> SiO 2 3000 Å thick is grown on an n-Si substrate (Fig. 13.4B). Two metal<br />

electrodes are deposited on the SiO 2 layer. They are made <strong>of</strong> aluminum, chromium,<br />

or phosphorus-doped polysilicon (LPCVD). 2 The electrode thickness is in the range<br />

2000–5000 Å. The electrodes are shaped in an interdigitized pattern as shown in Fig.<br />

13.4A. To provide additional temperature compensation, two temperature-sensitive<br />

resistors are formed on the same substrate. The top <strong>of</strong> the sensor is coated with a<br />

dielectric layer. For this layer, several materials can be used, such as chemically<br />

2 LPCVD - low pressure chemical vapor deposition.

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