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handbook of modern sensors

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5.9 Noise in Sensors and Circuits 205<br />

5.9.1 Inherent Noise<br />

A signal which is amplified and converted from a sensor into a digital form should be<br />

regarded not just by its magnitude and spectral characteristics but also in terms <strong>of</strong> a<br />

digital resolution. When a conversion system employs an increased digital resolution,<br />

the value <strong>of</strong> the least significant bit (LSB) decreases. For example, the LSB <strong>of</strong> a 10-bit<br />

system with a 5-V full scale is about 5 mV; the LSB <strong>of</strong> 16 bits is 77 µV. This by itself<br />

poses a significant problem. It makes no sense to employ, say, a 16-bit resolution<br />

system, if combined noise is, for example, 300 µV. In the real world, the situation is<br />

usually much worse. There are almost no <strong>sensors</strong> which are capable <strong>of</strong> producing a 5-V<br />

full-scale output signals. Most <strong>of</strong> them require amplification. For instance, if a sensor<br />

produces a full-scale output <strong>of</strong> 5 mV, at a 16-bit conversion it would correspond to a<br />

LSB <strong>of</strong> 77 nV—an extremely small signal which makes amplification an enormous<br />

task by itself. Whenever a high resolution <strong>of</strong> a conversion is required, all sources<br />

<strong>of</strong> noise must be seriously considered. In the circuits, noise can be produced by the<br />

monolithic amplifiers and other components which are required for the feedback,<br />

biasing, bandwidth limiting, and so forth.<br />

Input <strong>of</strong>fset voltages and bias currents may drift. In dc circuits, they are indistinguishable<br />

from low-magnitude signals produced by a sensor. These drifts are usually<br />

slow (within a bandwidth <strong>of</strong> tenths and hundredths <strong>of</strong> a hertz); therefore, they are <strong>of</strong>ten<br />

called ultralow-frequency noise. They are equivalent to randomly (or predictable—<br />

say, with temperature) changing voltage and current <strong>of</strong>fsets and biases. To distinguish<br />

them from the higher-frequency noise, the equivalent circuit (Fig. 5.3) contains two<br />

additional generators. One is a voltage <strong>of</strong>fset generator e 0 and the other is a current<br />

bias generator i 0 . The noise signals (voltage and current) result from physical mechanisms<br />

within the resistors and semiconductors that are used to fabricate the circuits.<br />

There are several sources <strong>of</strong> noise whose combined effect is represented by the noise<br />

voltage and current generators.<br />

One cause for noise is a discrete nature <strong>of</strong> electric current because current flow<br />

is made up <strong>of</strong> moving charges, and each charge carrier transports a definite value<br />

<strong>of</strong> charge (the charge <strong>of</strong> an electron is 1.6 × 10 −19 C). At the atomic level, current<br />

flow is very erratic. The motion <strong>of</strong> the current carriers resembles popcorn popping.<br />

This was chosen as a good analogy for current flow and has nothing to do with the<br />

“popcorn noise,” which we will discuss later. As popcorn, the electron movement<br />

may be described in statistical terms. Therefore, one never can be sure about very<br />

minute details <strong>of</strong> current flow. The movement <strong>of</strong> carriers are temperature related and<br />

noise power, in turn, is also temperature related. In a resistor, these thermal motions<br />

cause Johnson noise to result [12]. The mean-square value <strong>of</strong> noise voltage (which is<br />

representative <strong>of</strong> noise power) can be calculated from<br />

( V<br />

2<br />

)<br />

en 2 = 4kT Rf , (5.73)<br />

Hz<br />

where k = 1.38 × 10 −23 J/K (Boltzmann constant), T is the temperature (in K),<br />

R is the resistance (in ), and f is the bandwidth over which the measure-

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