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handbook of modern sensors

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References 555<br />

Fig. 18.17. Bonding <strong>of</strong> glass to silicon.<br />

heated to a high temperature. A large electric field is applied across the join, which<br />

causes an extremely strong bond to form between the two materials. Figure 18.17<br />

shows a glass plate bonded over a channel etched into a silicon wafer (RIE).<br />

It is also possible to bond silicon wafers directly together using gentle pressure,<br />

under water (direct silicon bonding). Other bonding methods include using an adhesive<br />

layer, such as a glass, or photoresist. Although anodic bonding and direct silicon<br />

bonding form very strong joins, they suffer from some disadvantages, including the<br />

requirement that the surfaces to be joined are very flat and clean. Wafer bonding<br />

techniques can potentially be combined with some <strong>of</strong> the basic micromachined structures<br />

to form the membranes, cantilevers, valves, pumps, and so forth, <strong>of</strong> a micr<strong>of</strong>luid<br />

handling system that may be parts <strong>of</strong> chemical <strong>sensors</strong>.<br />

References<br />

1. Middelhoek, S. and Hoogerwerf A.C. Smart <strong>sensors</strong>: when and where Sensors<br />

Actuators 8(1), 39–48, 1985.<br />

2. Obermier, E., Kopystynski, P. and Neißl, R. Characteristics <strong>of</strong> polysilicon layers<br />

and their application in <strong>sensors</strong>. IEEE Solid-State Sensors Workshop, 1986.<br />

3. Frijlink, P.M., Nicolas, J.L., and Suchet, P. Layer uniformity in a multiwafer<br />

MOVPRE reactor for III–V compounds. J. Crystal Growth 107, 167–174, 1991.<br />

4. Morgan, D.V. and Board, K. An Introduction to Semiconductor Microtechnology,<br />

John Wiley & Sons, New York, 1985.<br />

5. Muller, R.S., Howe, R.T., Senturia, S.D., Smith, R.L., and White R.M. (eds.).<br />

Micro<strong>sensors</strong>, IEEE Press, New York, 1991.

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