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handbook of modern sensors

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10.8 Optoelectronic Sensors 353<br />

Fig. 10.13. Schematic <strong>of</strong> an optoelectronic pressure sensor operating on the interference phenomenon.<br />

(Adapted from Ref. [12].)<br />

resolution, and high accuracy. Especially promising are the optoelectronic <strong>sensors</strong> operating<br />

with the light interference phenomena [11]. Such <strong>sensors</strong> use a Fabry–Perot<br />

(FP) principle <strong>of</strong> measuring small displacements (covered in more detail in Section<br />

7.5 <strong>of</strong> Chapter 7). A simplified circuit <strong>of</strong> one such a sensor is shown in Fig. 10.13.<br />

The sensor consists <strong>of</strong> the following essential components: a passive optical pressure<br />

chip with a membrane etched in silicon, a light-emitting diode (LED), and a<br />

detector chip [12]. A pressure chip is similar to a capacitive pressure sensor as described<br />

earlier, except that a capacitor is replaced by an optical cavity forming a<br />

Fabry–Perot interferometer [13] measuring the deflection <strong>of</strong> the diaphragm. A backetched<br />

single-crystal diaphragm on a silicon chip is covered with a thin metallic<br />

layer, and a glass plate is covered with a metallic layer on its backside. The glass<br />

is separated from the silicon chip by two spacers at a distance w. Two metallic layers<br />

form a variable-gap FP interferometer with a pressure-sensitive movable mirror<br />

(on the membrane) and a plane-parallel, stationary, fixed half-transparent mirror (on<br />

the glass). A detector chip contains three p-n-junction photodiodes. Two <strong>of</strong> them are<br />

covered with integrated optical FP filters <strong>of</strong> slightly different thicknesses. The filters<br />

are formed as first surface silicon mirrors, coated with a layer <strong>of</strong> SiO 2 and thin metal<br />

(Al) mirrors on their surfaces. An operating principle <strong>of</strong> the sensor is based on the<br />

measurement <strong>of</strong> a wavelength modulation <strong>of</strong> the reflected and transmitted light depending<br />

on the width <strong>of</strong> the FP cavity. The reflection and transmission from the cavity<br />

is almost a periodic function in the inverse wavelength, 1/λ, <strong>of</strong> the light with a period<br />

equal to 1/2w. Because w is a linear function <strong>of</strong> the applied pressure, the reflected<br />

light is wavelength modulated.<br />

The detector chip works as a demodulator and generates electrical signals representing<br />

the applied pressure. It performs an optical comparison <strong>of</strong> the sensing cavity<br />

<strong>of</strong> the pressure sensor with a virtual cavity formed by the height difference between<br />

two FP filters. If both cavities are the same, the detector generates the maximum pho-

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