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handbook of modern sensors

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534 18 Sensor Materials and Technologies<br />

Table 18.1. Stimuli <strong>of</strong> Silicon-Based Sensors<br />

Stimuli<br />

Effects<br />

Radiant Photovoltaic effect, photoelectric effect, photoconductivity,<br />

photo-magneto-electric effect<br />

Mechanical Piezoresistivity, lateral photoelectric effect,<br />

lateral photovoltaic effect<br />

Thermal Seebeck effect, temperature dependence <strong>of</strong> conductivity<br />

and junction, Nernst effect<br />

Magnetic Hall effect, magnetoresistance, Suhi effect<br />

Chemical Ion sensitivity<br />

Source: Ref. [1].<br />

Unfortunately, silicon does not posses the piezoelectric effect. Most effects <strong>of</strong><br />

silicon such as the Hall effect, the Seebeck effect, piezoresistance, and so forth are<br />

quite large; however, a major problem with silicon is that its responses to many stimuli<br />

show substantial temperature sensitivity. For instance: strain, light, and magnetic<br />

field responses are temperature dependent. When silicon does not display the proper<br />

effect, it is possible to deposit layers <strong>of</strong> materials with the desired sensitivity on top<br />

<strong>of</strong> the silicon substrate. For instance, sputtering <strong>of</strong> ZnO thin films is used to form<br />

piezoelectric transducers which are useful for the fabrication <strong>of</strong> SAW (surface acoustic<br />

waves) devices and accelerometers. In the later case, the strain at the support end<br />

<strong>of</strong> the an etched micromechanical cantilever is detected by a ZnO overlay.<br />

Silicon itself exhibits very useful mechanical properties which currently are<br />

widely used to fabricate such devices as pressure transducers, temperature <strong>sensors</strong>,<br />

force and tactile detectors by employing the MEMS technologies. Thin film and<br />

photolithographic fabrication procedures make it possible to realize a great variety<br />

<strong>of</strong> extremely small, high-precision mechanical structures using the same processes<br />

that have been developed for electronic circuits. High-volume batch-fabrication techniques<br />

can be utilized in the manufacture <strong>of</strong> complex, miniaturized mechanical components<br />

which may not be possible with other methods. Table A.14 in the Appendix<br />

presents a comparative list <strong>of</strong> mechanical characteristics <strong>of</strong> silicon and other popular<br />

crystalline materials.<br />

Although single-crystal silicon (SCS) is a brittle material, yielding catastrophically<br />

(not unlike most oxide-based glasses) rather than deforming plastically (like<br />

most metals), it certainly is not as fragile as is <strong>of</strong>ten believed. Young’s modulus <strong>of</strong> silicon<br />

(1.9 × 10 12 dyn/cm or 27 × 10 6 psi), for example, has a value <strong>of</strong> that approaching<br />

stainless steel and is well above that <strong>of</strong> quartz and <strong>of</strong> most glasses. The misconception<br />

that silicon is extremely fragile is based on the fact that it is <strong>of</strong>ten obtained in thin<br />

slices (5–13-cm-diameter wafers) which are only 250–500 µm thick. Even stainless<br />

steel at these dimensions is very easy to deform inelastically.<br />

As mentioned earlier, many <strong>of</strong> the structural and mechanical disadvantages <strong>of</strong><br />

SCS can be alleviated by the deposition <strong>of</strong> thin films. Sputtered quartz, for example,<br />

is utilized routinely by industry to passivate integrated circuit chips against airborne<br />

impurities and mild atmospheric corrosion effects. Another example is a deposition <strong>of</strong><br />

silicon nitrate (TableA.14) which has a hardness second only to diamond.Anisotropic

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