Copyright by William Lloyd Bircher 2010 - The Laboratory for ...
Copyright by William Lloyd Bircher 2010 - The Laboratory for ...
Copyright by William Lloyd Bircher 2010 - The Laboratory for ...
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Light activity yields higher precharge residency. DRAM activity is estimated using the<br />
DCTAccess metric. <strong>The</strong> sum of all DCT accesses on both channels (hit, miss and<br />
conflict) correlates positively to active DRAM power and negatively to precharge power<br />
savings. In most workloads this approach gave error of less than 10%. <strong>The</strong> two outliers<br />
were the CPU subtests of 3DMark06. Due to many of the memory transactions being<br />
spaced at intervals just slightly shorter than the precharge power down entry time, the<br />
model underestimates power <strong>by</strong> a larger margin. Higher accuracy would require a direct<br />
measurement of pre-charge power down residency or temporal locality of memory<br />
transactions. An example of model versus measured Memory power <strong>for</strong> SYSmark 2007-<br />
3D is provided in Figure 5.8. <strong>The</strong> modeled power as a function of the DRAM channel<br />
access rate (DCTAccess/sec) and Hypertransport activity percentage (LinkActive%) is<br />
given in Equation 5.8. Additional details <strong>for</strong> the equation components, DCTAccess/sec<br />
and LinkActive percent are given in section 5.3.3.<br />
Watts<br />
3<br />
2<br />
DIMM Power =<br />
4x10 -8 x DCTAccess/sec + 0.7434 x LinkActive% + 0.24<br />
Measured<br />
Modeled<br />
Error<br />
(5.8)<br />
100%<br />
1<br />
0<br />
4 cores<br />
accessing DRAM<br />
1 core<br />
accessing DRAM<br />
-50%<br />
-100%<br />
0 100 200 300 400<br />
Seconds<br />
500 600 700<br />
Figure 5.8 DRAM Power Model (∑DCT Access, LinkActive) – SYSmark 2007-3D<br />
97<br />
50%<br />
0%<br />
Error(%)