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SOLAR CELL FUNDAMENTALS 97<br />

0.85<br />

0.80<br />

FF<br />

4.0<br />

0.75<br />

I SC<br />

3.5<br />

0.70<br />

V OC<br />

[V], FF<br />

0.65<br />

0.60<br />

0.55<br />

V OC<br />

L n < W p<br />

L n > W p<br />

3.0<br />

2.5<br />

I SC<br />

[A]<br />

0.50<br />

2.0<br />

10 −6 10 −5 10 −4 10 −3<br />

Base lifetime tn<br />

[s]<br />

Figure 3.17 Effect of base lifetime on solar cell performance for the solar cell parameters in<br />

Table 3.2. The minority-carrier diffusion length (L n = √ D n τ n ) is equal to the base thickness (W P )<br />

when τ n = 25.7 µs<br />

Front surface recombination for solar cells with contact grids on the front of the<br />

device is really an average over the front surface area of the relatively low surface<br />

recombination velocity between the grid lines and the very high surface recombination<br />

velocity of the ohmic contact. An expression for the effective front surface recombination<br />

velocity is given by [16]<br />

⎡<br />

(<br />

(1 − s)S F G N τ p cosh W )<br />

N<br />

− 1 + p o (e qV/AokT − 1) ⎢<br />

L p<br />

⎣ s D cosh W ⎤<br />

N<br />

p L p<br />

L p<br />

sinh W + S F<br />

⎥<br />

N<br />

⎦<br />

L p<br />

S F,eff =<br />

(<br />

(1 − s)<br />

[p o (e qV/A okT<br />

− 1) + G N τ p cosh W )]<br />

N<br />

− 1<br />

L p<br />

(3.144)<br />

where S F is the surface recombination velocity between the grid lines and G is the<br />

average generation rate in the emitter region. It is obvious that S F,eff is dependent upon<br />

the solar cell operation point. This is better seen in Table 3.3 where some special cases<br />

are illustrated (assuming L p ≫ W N ).

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