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192 SOLAR GRADE SILICON FEEDSTOCK<br />

Metal impurity concentration<br />

[ppma]<br />

10 −5 10 −4 10 −3 10 −2 10 −1 1.0 10<br />

Normalised efficiency (h/h baseline )<br />

1.0<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

Ta Mo<br />

Nb<br />

W<br />

Zr<br />

Ti<br />

V<br />

Co<br />

Cr<br />

Fe<br />

Mn<br />

p-type silicon<br />

Ni<br />

Al<br />

P<br />

Cu<br />

0.0<br />

10<br />

11<br />

10 12 10 13 10 14 10 15 10 16 10 17 10 18<br />

Metal impurity concentration<br />

[atoms/cm 3 ]<br />

Figure 5.11 Solar cell efficiency versus impurity concentration for 4 ohm cm p-base devices [30].<br />

Reproduced from Davis Jr. J et al., IEEE Trans. Electron Devices © 1980 IEEE<br />

Metal impurity concentration<br />

[ppma]<br />

10 −5 10 −4 10 −3 10 −2 10 −1 1.0 10<br />

Relative efficiency (h/h baseline )<br />

1.0<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

Mo<br />

Ti<br />

V Cr<br />

Fe<br />

Ni<br />

Mn<br />

Al<br />

Cu<br />

n-type silicon<br />

0.0<br />

10<br />

11<br />

10 12 10 13 10 14 10 15 10 16 10 17 10 18<br />

Metal impurity concentration<br />

[atoms/cm 3 ]<br />

Figure 5.12 Solar cell efficiency versus impurity concentration for 1.5 ohm cm n-base devices [30].<br />

Reproduced from Davis Jr. J et al., IEEE Trans. Electron Devices © 1980 IEEE

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