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CdTe PROPERTIES AND THIN-FILM FABRICATION METHODS 627
Close space sublimation
(~10 Torr)
600°C
Vapor transport deposition
(10−100 Torr)
Carrier gas
CdTe
700°C
CdTe
650−750°C
600°C
d = 1−15 µm @ 1−5 µm/min
d = 1–10 µm @ 0.1−1 µm/min
Physical vapor deposition
(10 −6 Torr)
400°C
Cd + Te 2
vapor
Solid CdTe
700−900°C
d = 1−5 µm @ 0.01−0.5 µm/min
Electrodeposition
− + (1 atm)
Sputter deposition
(10 −4 Torr)
200°C
CdTe
target
d = 1−4 µm @ ~0.1 µm/min
Metal organic
chemical vapor deposition
Source gases
(1 atm)
Cd ++
+ HTeo 3
80°C
200−400°C
d = 1−2 µm @ 0.01−0.1 µm/min
Spray deposition
CdCl 2 + Te (1 atm)
d = 1−4 µm @ 0.01−0.1 µm/min
Screen print deposition
(1 atm)
CdTe slurry
Screen
600°C
d = 1−20 µm @ ~1 µm/min
d = 5−30 µm
~ 25°C
Figure 14.6 Schematic representations of eight CdTe thin-film deposition techniques. The substrate
in each view is the cross-lined rectangle. Film thickness, d, and growth rate are shown at the
bottom of each panel
presentation is organized by three chemical concepts: (1) condensation/reaction of Cd
and Te 2 vapors on a surface (PVD, VTD, CSS, and sputter deposition), (2) galvanic
reduction of Cd and Te ions at a surface (electrodeposition), (3) reaction of precursors at
a surface [metal-organic chemical vapor deposition (MOCVD), screen-print deposition,
and spray deposition].