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590 Cu(InGa)Se 2 SOLAR CELLS<br />

20<br />

Cd-free<br />

CBD-CdS<br />

16<br />

12<br />

8<br />

4<br />

None<br />

None<br />

MOCVD-ZnO<br />

ALCVD-ZnO<br />

Zn-treatment<br />

Zn(O,S,OH)<br />

CBD-ZnS<br />

ILGAR-ZnS<br />

Zn(Se,OH)<br />

ALCVD-ZnSe<br />

MOCVD-ZnSe<br />

InSe x<br />

ZnIn x Se y<br />

In(OH,S)<br />

Efficiency<br />

[%]<br />

In 2 Se 3<br />

Figure 13.13 The efficiency of Cu(InGa)Se 2 solar cells with a selection of Cd-free junctionformation<br />

methods together with corresponding values of Cu(InGa)Se 2 cells with chemical<br />

bath–deposited CdS<br />

Cu(InGa)Se 2 surface, which would reduce the recombination in a shallow n-type emitter,<br />

and possibly also serve to protect the junction and near-surface region during subsequent<br />

deposition of the transparent contact materials.<br />

13.4.5 Transparent Contacts<br />

The early Cu(InGa)Se 2 devices used CdS doped with In or Ga as front-contact layers in<br />

addition to the CdS buffer layer. Short wavelength light (

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