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346 THIN-FILM SILICON SOLAR CELLS<br />

6000<br />

5000<br />

4000<br />

Al<br />

Intensity<br />

[CPS]<br />

3000<br />

2000<br />

1000<br />

0<br />

Al<br />

0 20 40 60 80 100 120 140<br />

2 q<br />

[deg]<br />

5000<br />

4000<br />

Al<br />

Intensity<br />

[CPS]<br />

3000<br />

2000<br />

1000<br />

0<br />

Si (111)<br />

Si (220)<br />

0 20 40 60 80 100 120 140<br />

2 q<br />

[deg]<br />

Figure 8.26 XRD spectrum of a 3-µm-thick HWCVD a-Si film, deposited on Al/Cr/glass at about<br />

100 ◦ C (a) before optical processing; and (b) after optical processing at ∼480 ◦ Cfor3min<br />

crystallization front propagates away from the interface converting a-Si into crystalline Si.<br />

These features can be seen in Figure 8.29(a), which is a TEM cross-section of a partially<br />

crystallized Si film on a glass substrate. The film, 6 µm thick, was deposited at 250 ◦ C<br />

and processed for 3 min at 460 ◦ C. The various regions of the structure are identified in<br />

the figure. The largest grain size near the Al interface is about 0.1 µm and decreases

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