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CdTe THIN-FILM SOLAR CELLS 641<br />

10 −6 Subst film config<br />

Super film config<br />

1.3 1.35 1.4 1.45 1.5 1.55<br />

10 −7<br />

D gb<br />

[cm 2 /s]<br />

10 −8<br />

10 −9<br />

Slope ∼ 2.0 eV<br />

10 −10<br />

Figure 14.17 Arhennius plot of grain-boundary diffusion coefficients versus inverse of treatment<br />

temperature for values obtained by modeling XRD line profiles of thin-film CdTe/CdS samples [73]<br />

10 3 /T<br />

[K]<br />

In cells, alloy formation has both beneficial and detrimental effects. The<br />

interdiffusion process narrows the absorber-layer band gap, resulting in higher longwavelength<br />

quantum efficiency. Although this gain is somewhat offset by a reduction<br />

in the built-in voltage, open-circuit voltages exceeding 820 mV have been obtained in<br />

cells having alloyed CdTe 1−x S x absorber layers with composition x>0.05, made by<br />

spray pyrolysis [150]. Intermixing reduces interfacial strain [68] and may reduce the dark<br />

recombination current [78]. The CdS film thickness is reduced, which can be beneficial<br />

for window transmission, but nonuniform CdS consumption can result in lateral junction<br />

discontinuities. The CdTe 1−x S x alloy formation is detected in XRD line profiles of the<br />

absorber layer and in the long-wavelength spectral response. This correlation between<br />

compositionally broadened XRD line profiles and the long-wavelength QE edge is<br />

illustrated in Figure 14.19 for XRD and QE measurements of completed cells. For CSS<br />

cells, deposited at high temperature and having large grains, the absorber layer exhibits<br />

a narrow (511)/(333) XRD profile at the CdTe position, indicating a negligible degree<br />

of alloy formation, and hence low CdS diffusion into CSS-deposited CdTe. This is seen<br />

in the QE plot, where the long-wavelength edge occurs at the wavelength expected for<br />

CdTe. In contrast, the cell made by spray pyrolysis, with the CdTe film formed at high<br />

temperature in the presence of CdCl 2 , exhibits an asymmetrical XRD line profile with<br />

its peak near the one expected for the CdTe 0.96 S 0.05 and a tail extending toward pure<br />

CdTe. The XRD line profile thus indicates nonuniform S distribution in the absorber<br />

layer, evident in the QE plot as a shallow drop in the long-wavelength response. The<br />

PVD case is intermediate to the CSS and spray cases, having smaller grains than CSS<br />

films and receiving less exposure to CdCl 2 than sprayed films. Thus, it appears that apart

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