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328 THIN-FILM SILICON SOLAR CELLS<br />

absorption. The amount of the absorption loss depends on the texture parameters, the<br />

thickness of the film, and on the metal itself. The approach for minimizing the reflector<br />

loss in thin amorphous-silicon solar cells is discussed in several papers [60, 61]. Here we<br />

use a similar approach to optimize parameters for the cell structure shown in Figure 8.12.<br />

Figure 8.13(a–d) shows the calculated optical properties of the cells with the basic<br />

structures shown in the inserts of these figures. The MACD and metal loss under different<br />

conditions are also denoted in these figures. In this calculation, the thickness of the cell<br />

considered is 10 µm and the back-contact metal is Al. The texture height is 1.0 micron.<br />

From this figure, it can be seen that as long as either surface is textured, the MACD<br />

of the device will be higher than that of double-side planar cells, even if metal loss is<br />

higher in some cases. Another observation that can be made from these figures is that<br />

the MACD will be improved more (about 30%) in double-sided textured or front-side<br />

textured/backside planar cells. Double-sided textured cells will yield the highest MACD.<br />

This conclusion suggests that double-sided textured or front-side textured structures should<br />

be used in the design of solar cells. The important point is that it is more effective to<br />

R,T,A<br />

1.0<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

1.0<br />

Refl.<br />

Total_abs<br />

Metal abs<br />

0.8<br />

Abs_Si<br />

Si<br />

Refl.<br />

0.6<br />

Total_abs<br />

Abs_Si<br />

Metal abs<br />

Al<br />

0.4<br />

MACD = 21.06 mA/cm 2<br />

MACD = 34.33 mA/cm 2<br />

Metal loss = 2.46 mA/cm 2 0.2 Metal loss = 1.50 mA/cm 2<br />

R,T,A<br />

Si<br />

Al<br />

R,T,A<br />

0.0<br />

0.2 0.4 0.6 0.8 1.0 1.2<br />

Wavelength<br />

[µm]<br />

(a)<br />

1.0<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

0.0<br />

Refl.<br />

Total_abs<br />

Abs_Si<br />

Metal abs<br />

MACD = 32.15 mA/cm 2<br />

Metal loss = 4.45 mA/cm 2<br />

0.2 0.4 0.6 0.8 1.0 1.2<br />

Wavelength<br />

[µm]<br />

(c)<br />

Si<br />

Al<br />

R,T,A<br />

0.0<br />

0.2 0.4 0.6 0.8 1.0 1.2<br />

Wavelength<br />

[µm]<br />

1.0<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

Refl.<br />

Total_abs<br />

Abs_Si<br />

Metal abs<br />

(b)<br />

MACD = 36.64 mA/cm 2<br />

Metal loss = 3.95 mA/cm 2<br />

0.0<br />

0.2 0.4 0.6 0.8 1.0 1.2<br />

Wavelength<br />

[µm]<br />

(d)<br />

Si<br />

Al<br />

Figure 8.13(a–d) Calculated reflectance (R), transmittance (T), and absorbance (A) of a single-junction<br />

cell under different surface configurations. The cell structures are shown in the inset<br />

of the figures. Absorber thickness = 10 µm. (a) Planar, (b) FTBP, (c) FPBT, and (d) DT

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