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VERY HIGH EFFICIENCY CONCEPTS 147<br />

70<br />

Efficiency h<br />

[%]<br />

e g<br />

65 1.11 1.23 1.34<br />

1.46<br />

0.98<br />

1.56<br />

60<br />

1.66<br />

Tandem (series connected)<br />

55 1.44 1.50 1.57<br />

1.76<br />

1.63<br />

1.40<br />

1.71<br />

1.79<br />

1.87<br />

50<br />

45<br />

40<br />

Single gap<br />

35<br />

30<br />

T a = 300 K<br />

1.87<br />

1.95<br />

25<br />

0.5<br />

0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br />

Energy e 1<br />

[eV]<br />

Figure 4.15 Limiting efficiency for the IB solar cell under maximum concentrated sunlight. For<br />

comparison, the limiting efficiency of single-gap solar cells (in this case, ε l ≡ ε g ) and a tandem<br />

of two cells that are series-connected are also shown (in this case, ε l labels the lowest band gap<br />

of the cells and the figures on the curve correspond to the highest of the band gaps). (Reproduced<br />

from Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate<br />

Levels, Luque A. and Martí A., Physical Review Letters V. 78 N. 34, 5014–5017, by permission<br />

of American Physical Society © 1997)<br />

Barrier semiconductor<br />

Contact<br />

Contact<br />

p<br />

n<br />

Quantum<br />

dots<br />

Conduction band<br />

Fermi<br />

level, E F IB<br />

0.71 eV<br />

1.24 eV<br />

Valence band<br />

Figure 4.16<br />

IB formation in QD arrays

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