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638 CADMIUM TELLURIDE SOLAR CELLS<br />

driving force for bulk and grain-boundary interdiffusion of CdTe and CdS. It has been<br />

widely reported that a continuous CdTe–CdS solid-solution alloy series can be formed<br />

by codeposition of CdTe and CdS at temperatures less than 200 ◦ C. The optical band gap<br />

of these alloys varies with the composition according to E g (x) = 2.40x + 1.51(1 − x) −<br />

bx(1 − x), with bowing parameter, b∼1.8, as shown in Figure 14.13 [139]. However,<br />

thermal treatment of alloy films above 400 ◦ C can induce phase segregation, with the<br />

miscibility gap found for equilibrated CdTe–CdS mixed crystals.<br />

Numerous references have established the T–x phase relations in CdTe–CdS mixed<br />

crystals at temperatures above 625 ◦ C, which exceeds the temperatures typically used<br />

to deposit and process thin-film CdTe/CdS structures. This has been extended down<br />

to 360 ◦ C by lattice-parameter determination of equilibrated CdTe 1−x S x alloy films, as<br />

shown in Figure 14.14 [146]. Thermodynamic analysis of the asymmetric phase boundaries<br />

using nonideal solution thermodynamics reveals positive values of excess-mixing<br />

enthalpies H EX = 3.5 kcal/mol for CdS into CdTe and H EX = 5.6 kcal/mol for CdTe<br />

into CdS. For CdS dissolved in CdTe, the experimentally obtained excess-mixing enthalpy<br />

supports those calculated from first principles band structure theory for the CdTe–CdS<br />

system [147].<br />

The crystallographic forms of the solid alloys are the zincblende (F-43 m) structure<br />

for CdTe 1−x S x and the wurtzite (P6 3 mc) structure for CdS 1−y Te y . The zincblende<br />

transition to the wurtzite structure in metastable films occurs at x = 0.3, and the lattice<br />

parameter within each structure type follows Vegard’s rule. Metastable and equilibrated<br />

CdTe 1−x S x alloy films exhibit the same dependence of E g , with minimum at 1.39 eV,<br />

corresponding to the zincblende–wurtzite transition.<br />

2.4<br />

2.2<br />

2<br />

Calc; b = 1.8<br />

Ohata (1976)<br />

Moon (1992)<br />

Jensen (1997)<br />

Hill (1973)<br />

Compaan (1997)<br />

Bonnet (1970)<br />

Eg<br />

[eV]<br />

1.8<br />

1.6<br />

1.4<br />

1.2 0 0.2 0.4 0.6 0.8 1<br />

x in CdTe 1−x S x<br />

Figure 14.13 Optical band gap of CdTe 1−x S x alloy thin films versus composition. (Data listed in<br />

order from References [140–145])

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