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582 Cu(InGa)Se 2 SOLAR CELLS<br />

T SS<br />

550<br />

0.3<br />

Relative flux<br />

0.2<br />

0.1<br />

Cu<br />

In<br />

Ga<br />

450<br />

350<br />

T SS<br />

[C]<br />

0<br />

T SS<br />

550<br />

0.3<br />

Cu<br />

Relative flux<br />

0.2<br />

0.1<br />

In<br />

Ga<br />

450<br />

350<br />

T SS<br />

[C]<br />

0<br />

T SS<br />

550<br />

0.3<br />

Relative flux<br />

0.2<br />

0.1<br />

In<br />

Ga<br />

Cu<br />

450<br />

350<br />

T SS<br />

[C]<br />

0<br />

T SS<br />

550<br />

0.3<br />

Relative flux<br />

0.2<br />

0.1<br />

Cu<br />

In<br />

Ga<br />

450<br />

350<br />

T SS<br />

[C]<br />

0<br />

Time<br />

[min]<br />

Figure 13.10 Relative metal fluxes and substrate temperature for different coevaporation processes.<br />

In all cases, a constant Se flux is also supplied<br />

been successfully implemented. Direct flux measurement may be critical in a manufacturing<br />

scale process, particularly if source depletion over long run times causes the relation<br />

between source temperature and effusion rate to vary over time. In addition, the process<br />

can be monitored by in situ film thickness measurement using a quartz crystal monitor, or<br />

optical spectroscopy or X-ray fluorescence of the growing film [83]. The latter has also<br />

been used to measure composition. When the process includes a transition from Cu-rich<br />

to Cu-poor composition near the end of the deposition, it can be monitored by a change

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