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636 CADMIUM TELLURIDE SOLAR CELLS
2500
(111)
v
2000
Intensity
[AU]
1500
1000
(220)
v
(311)
v
(400)
v
(331)
v (422)
v
(511)
(333)
v
(531)
v
500
0
20
30
40
50
2-q
[deg]
60
70
80
90
Figure 14.10 X-ray diffraction patterns of PVD CdTe/CdS thin-film structures before and after
vapor CdCl 2 heat treatment at 420 ◦ C for 20 min, showing randomization of the film orientation.
The primary peaks are due to the 1.5-µm-thick CdTe layer; the other peaks are due to the underlying
CdS and ITO films
10
5
0
Current density
[mA/cm 2 ]
−5
−10
a
−15
b
−20
c
−25 −0.5 0 0.5 1
Voltage
[V]
Figure 14.11 Light AM1.5 J –V curves of PVD devices with Cu 2 Te/C contacts and different postdeposition
processing: (a) no heat treatment; (b) treatment at 550 ◦ C for 5 min in air; (c) treatment
in CdCl 2 vapor at 420 ◦ C for 20 min in air [105]