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600 Cu(InGa)Se 2 SOLAR CELLS J SC or FF is reduced sharply. With a smaller spike, electrons can be transported across the interface assisted by thermionic emission [185]. On the other hand, for sufficiently negative E C the induced type inversion of the Cu(InGa)Se 2 near the interface is eliminated and interface state recombination will limit V OC . An ODC layer at the surface of the absorber layer increases the band gap and primarily affects the valence band [188], so it may enhance type inversion near the junction. However, there is no convincing evidence that this layer exists in devices, so it is not shown in Figure 13.19. Owing to its importance in the electronic behavior of Cu(InGa)Se 2 /CdS devices, several efforts have been made to calculate or measure E C with varying results. Band-structure calculations gave E C = 0.3 eV [189]. XPS and ultraviolet photoelectron spectroscopy (UPS) measurements of the valence band alignment indicate a positive E C between 0.2 and 0.7 eV [52, 190, 191]. These electron spectroscopy methods require ultrahigh vacuum conditions that necessitates that the CdS is deposited by vacuum evaporation. It is possible that the interface formation is different when CdS is grown by chemical bath deposition, for example, due to chemical interdiffusion, resulting in a different alignment of the conduction bands. Indirect measurements of the junction formed with chemical bath deposited CdS using a surface photovoltage technique gave E C =−0.1 eV [192]. Finally, inverse photoemission spectroscopy showed that substantial chemical intermixing occurs across the interface resulting in E C = 0 [193]. 13.5.4 Wide and Graded Band Gap Devices While the highest efficiency devices generally have Ga/(In + Ga) ≈ 0.1–0.3 giving E g ≈ 1.1–1.2 eV, significant effort has been made to develop high-efficiency solar cells based on wider band gap alloys. This is driven primarily by the expectation that wider band gap alloys will yield higher module efficiencies due to reduced losses related to the trade-off between higher voltage and lower current at maximum power. The resulting reduction in power loss, proportional to I 2 R, can be used to either (1) increase the module’s active area by reducing the spacing between interconnects or (2) decrease the optical absorption in the TCO layers since they can tolerate greater resistance. Wider band gap should give a lower coefficient of temperature for the device or module output power, which will improve performance at the elevated temperatures experienced in most real terrestrial applications. Wide band gap devices could also be used as the top cell in a tandem or multijunction cell structure. The wider band gap materials that have attracted the most attention for devices are Cu(InGa)Se 2 and CuInS 2 .CuGaSe 2 has E g = 1.68 eV, which is well suited for the wide band gap cell in tandem structures. CuInS 2 has E g = 1.53 eV, which could be nearly optimum for a single-junction device. The highest-efficiency devices based on CuInS 2 are deposited with Cu-rich overall composition and then the excess Cu, in the form of a Cu x S second phase, is etched away before CdS deposition [194]. Cu(InAl)Se 2 solar cells have also been considered [195]. Since CuAlSe 2 has E g = 2.7 eV, the alloy requires smaller changes in relative alloy concentration and lattice parameter from CuInSe 2 than the Ga alloys to achieve comparable band gap. The highest efficiency devices of different alloys are listed in Table 13.5. The effects of Ga incorporation on device behavior are not fully understood. The addition of a small amount of Ga to CuInSe 2 increased the open-circuit voltage even when
DEVICE OPERATION 601 Table 13.5 Highest-efficiency devices for different alloy absorber layers Material E g [eV] Efficiency [%] V OC [%] J SC [mA/cm 2 ] FF [%] Reference CuInSe 2 1.02 15.4 515 41.2 72.6 [80] Cu(InGa)Se 2 1.12 18.8 678 35.2 78.6 [1] CuGaSe 2 1.68 8.3 861 14.2 67.9 [196] CuInS 2 1.53 11.4 729 21.8 71.7 [197] Cu(InAl)Se 2 1.16 16.9 621 36.0 75.5 [198] 0.9 16 14 0.8 Efficiency [%] 12 0.7 V OC [V] 10 8 0.6 1.1 1.2 1.3 1.4 1.5 1.6 E g [eV] Figure 13.20 Efficiency () andV OC (ž) as a function of Cu(InGa)Se 2 band gap, varied by increasing the relative Ga content, (From Shafarman W, Klenk R, McCandless B, Proc. 25 th IEEE Photovoltaic Specialist Conf., 763–768 (1996) [199]. The dashed line has slope V OC /E g = 1 the Ga was confined to the back of the absorber and did not increase the band gap in the space charge region [105]. The effect of increasing band gap in Cu(InGa)Se 2 /CdS solar cells on V OC and efficiency is shown in Figure 13.20. Efficiency is roughly independent of band gap for E g < 1.3 eVorGa/(In + Ga)
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Handbook of Photovoltaic Science an
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We dedicate this book to all those
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xxiv LIST OF CONTRIBUTORS Phone: +1
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xxvi LIST OF CONTRIBUTORS 28040 Mad
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Contents List of Contributors xxiii
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CONTENTS ix 4.3.1 The Balance Equat
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CONTENTS xi 7.4 Manufacturing Proce
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CONTENTS xiii 9.8 Future-generation
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CONTENTS xv 12.1.2 Designs for Amor
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CONTENTS xvii 14.3.3 CdS/CdTe Inter
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CONTENTS xix 18.2.2 Batteries with
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CONTENTS xxi 22.2 PV in Architectur
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1 Status, Trends, Challenges and th
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WHAT IS PHOTOVOLTAICS? 3 1.2 WHAT I
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SIX MYTHS OF PHOTOVOLTAICS 5 Sunlig
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SIX MYTHS OF PHOTOVOLTAICS 7 of 10
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SIX MYTHS OF PHOTOVOLTAICS 9 2500 W
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HISTORY OF PHOTOVOLTAICS 11 the maj
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HISTORY OF PHOTOVOLTAICS 13 the USA
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PV COSTS, MARKETS AND FORECASTS 15
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PV COSTS, MARKETS AND FORECASTS 17
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GOALS OF PV RESEARCH AND MANUFACTUR
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GLOBAL TRENDS IN PERFORMANCE AND AP
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CRYSTALLINE SILICON PROGRESS AND CH
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CRYSTALLINE SILICON PROGRESS AND CH
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THIN FILM PROGRESS AND CHALLENGES 2
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THIN FILM PROGRESS AND CHALLENGES 2
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CONCENTRATION PV SYSTEMS 31 reality
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BALANCE OF SYSTEMS 33 Percentage of
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BALANCE OF SYSTEMS 35 Total capital
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FUTURE OF EMERGING PV TECHNOLOGIES
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CONCLUSIONS 39 Yet, in all these al
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REFERENCES 41 the other hand, hybri
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REFERENCES 43 69. Mickelson R, Chen
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46 MOTIVATION FOR PV APPLICATION AN
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62 THE PHYSICS OF THE SOLAR CELL Su
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64 THE PHYSICS OF THE SOLAR CELL 3.
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66 THE PHYSICS OF THE SOLAR CELL E
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72 THE PHYSICS OF THE SOLAR CELL an
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74 THE PHYSICS OF THE SOLAR CELL pr
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76 THE PHYSICS OF THE SOLAR CELL No
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80 THE PHYSICS OF THE SOLAR CELL El
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82 THE PHYSICS OF THE SOLAR CELL wh
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84 THE PHYSICS OF THE SOLAR CELL n
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86 THE PHYSICS OF THE SOLAR CELL Th
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88 THE PHYSICS OF THE SOLAR CELL Th
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94 THE PHYSICS OF THE SOLAR CELL Ta
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96 THE PHYSICS OF THE SOLAR CELL cu
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100 THE PHYSICS OF THE SOLAR CELL 5
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102 THE PHYSICS OF THE SOLAR CELL I
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106 THE PHYSICS OF THE SOLAR CELL T
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108 THE PHYSICS OF THE SOLAR CELL S
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114 THEORETICAL LIMITS OF PHOTOVOLT
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5 Solar Grade Silicon Feedstock Bru
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SILICON 155 faces of silicon are (1
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SILICON 157 powder in the presence
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SILICON 159 5.2.4.1.2 Wrought alloy
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PRODUCTION OF METALLURGICAL GRADE S
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PRODUCTION OF SEMICONDUCTOR GRADE S
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CURRENT SILICON FEEDSTOCK TO SOLAR
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CURRENT SILICON FEEDSTOCK TO SOLAR
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REQUIREMENTS OF SILICON FOR CRYSTAL
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ROUTES TO SOLAR GRADE SILICON 193 c
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ROUTES TO SOLAR GRADE SILICON 195 c
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ROUTES TO SOLAR GRADE SILICON 197 d
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ROUTES TO SOLAR GRADE SILICON 199 d
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CONCLUSIONS 201 2. Another German c
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REFERENCES 203 34. Fischler S, J. A
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6 Bulk Crystal Growth and Wafering
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BULK MONOCRYSTALLINE MATERIAL 207 b
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BULK MONOCRYSTALLINE MATERIAL 209 (
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BULK MONOCRYSTALLINE MATERIAL 211 O
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BULK MONOCRYSTALLINE MATERIAL 213 8
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BULK MULTICRYSTALLINE SILICON 215 I
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BULK MULTICRYSTALLINE SILICON 217 1
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BULK MULTICRYSTALLINE SILICON 219 b
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BULK MULTICRYSTALLINE SILICON 221 L
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WAFERING 223 This in turn verifies
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WAFERING 225 suspension of hard gri
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WAFERING 227 tips, they can exert v
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WAFERING 229 6.4.3 Wafer Quality an
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SILICON RIBBON AND FOIL PRODUCTION
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NUMERICAL SIMULATIONS OF CRYSTAL GR
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CONCLUSIONS 251 the supercooling de
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REFERENCES 253 28. Sahoo R et al.,
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7 Crystalline Silicon Solar Cells a
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CRYSTALLINE SILICON AS A PHOTOVOLTA
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CRYSTALLINE SILICON SOLAR CELLS 259
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MANUFACTURING PROCESS 271 The most
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MANUFACTURING PROCESS 273 3. Textur
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MANUFACTURING PROCESS 275 materials
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MANUFACTURING PROCESS 277 nearly 50
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MANUFACTURING PROCESS 279 Figure 7.
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VARIATIONS TO THE BASIC PROCESS 281
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MULTICRYSTALLINE CELLS 283 of defec
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MULTICRYSTALLINE CELLS 285 better s
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MULTICRYSTALLINE CELLS 287 Figure 7
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OTHER INDUSTRIAL APPROACHES 289 TCO
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CRYSTALLINE SILICON PHOTOVOLTAIC MO
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CRYSTALLINE SILICON PHOTOVOLTAIC MO
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ELECTRICAL AND OPTICAL PERFORMANCE
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FIELD PERFORMANCE OF MODULES 301 7.
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REFERENCES 303 REFERENCES 1. Luque
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REFERENCES 305 75. Lenkeit B et al.
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8 Thin-film Silicon Solar Cells Bhu
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INTRODUCTION 309 Open circuit volta
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A REVIEW OF CURRENT THIN-FILM SI CE
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CVD Excimer laser crystallization U
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n-type silicon (0.2 µm) p-type sil
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DESIGN CONCEPTS OF TF-SI SOLAR CELL
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CONCLUSION 353 Introduction of H af
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REFERENCES 355 17. Kamins T, Ed, Po
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REFERENCES 357 98. Symko M, Sopori
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360 HIGH-EFFICIENCY III-V MULTIJUNC
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10 Space Solar Cells and Arrays She
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THE HISTORY OF SPACE SOLAR CELLS 41
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THE CHALLENGE FOR SPACE SOLAR CELLS
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SILICON SOLAR CELLS 425 Figure 10.7
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III-V SOLAR CELLS 427 n+-GaAs n-AlI
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III-V SOLAR CELLS 429 missions with
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SPACE SOLAR ARRAYS 431 supported af
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SPACE SOLAR ARRAYS 433 JPL-25888AC
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SPACE SOLAR ARRAYS 435 Figure 10.13
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SPACE SOLAR ARRAYS 437 Figure 10.15
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SPACE SOLAR ARRAYS 439 0.31 Astrono
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FUTURE CELL AND ARRAY POSSIBILITIES
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FUTURE CELL AND ARRAY POSSIBILITIES
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POWER SYSTEM FIGURES OF MERIT 445 A
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REFERENCES 447 8. Statler R, Curtin
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11 Photovoltaic Concentrators Richa
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INTRODUCTION 451 markets most often
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BASIC TYPES OF CONCENTRATORS 453 ha
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BASIC TYPES OF CONCENTRATORS 455 is
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BASIC TYPES OF CONCENTRATORS 457 sk
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BASIC TYPES OF CONCENTRATORS 459 Ho
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HISTORICAL OVERVIEW 461 thereafter.
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HISTORICAL OVERVIEW 463 Figure 11.6
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HISTORICAL OVERVIEW 465 production
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HISTORICAL OVERVIEW 467 Figure 11.1
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HISTORICAL OVERVIEW 469 n + bussbar
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HISTORICAL OVERVIEW 471 array [33].
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HISTORICAL OVERVIEW 473 Solar radia
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OPTICS OF CONCENTRATORS 475 q max,
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OPTICS OF CONCENTRATORS 477 If r 1
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OPTICS OF CONCENTRATORS 479 r i Med
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OPTICS OF CONCENTRATORS 481 When θ
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OPTICS OF CONCENTRATORS 483 filled
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OPTICS OF CONCENTRATORS 485 q i q i
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OPTICS OF CONCENTRATORS 487 For lar
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OPTICS OF CONCENTRATORS 489 on a co
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OPTICS OF CONCENTRATORS 491 gleaned
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OPTICS OF CONCENTRATORS 493 Solar c
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CURRENT CONCENTRATOR ACTIVITIES 495
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REFERENCES 501 11. Boes E, “Photo
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REFERENCES 503 60. Uematsu T et al.
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506 AMORPHOUS SILICON-BASED SOLAR C
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Page 589 and 590: INTRODUCTION 569 CdS. The latter en
Page 591 and 592: MATERIAL PROPERTIES 571 Even though
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Page 637 and 638: 14 Cadmium Telluride Solar Cells Br
Page 639 and 640: INTRODUCTION 619 In contrast to p/n
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CdTe MODULES 651 14.4 CdTe MODULES
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THE FUTURE OF CdTe-BASED SOLAR CELL
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THE FUTURE OF CdTe-BASED SOLAR CELL
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REFERENCES 657 This chapter has sho
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REFERENCES 659 60. Wei S, Mtg. Reco
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REFERENCES 661 152. McCandless B, Q
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15 Dye-sensitized Solar Cells Kohji
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INTRODUCTION TO DYE-SENSITIZED SOLA
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DSSC FABRICATION (η = 8%) 679 alko
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DSSC FABRICATION (η = 8%) 681 15.2
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NEW DEVELOPMENTS 683 of highly effi
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NEW DEVELOPMENTS 685 HOOC COOH HOOC
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NEW DEVELOPMENTS 687 photosensitize
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NEW DEVELOPMENTS 689 of these ionic
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APPROACH TO COMMERCIALIZATION 691 1
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Institute and reference Table 15.3
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SUMMARY AND PROSPECTS 695 Chemicals
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16 Measurement and Characterization
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RATING PV PERFORMANCE 703 Spectral
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λ [nm] Table 16.3 AM0 standard sol
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171.5 7.01E − 1 372.5 1074 573.5
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228.5 52.940 429.5 1501 630.7 1682
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288.5 328.400 489.5 1994 689.1 1506
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RATING PV PERFORMANCE 713 The extra
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RATING PV PERFORMANCE 715 of about
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RATING PV PERFORMANCE 717 Energy [W
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RATING PV PERFORMANCE 719 16.2.4 Tr
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CURRENT VERSUS VOLTAGE MEASUREMENTS
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MODULE QUALIFICATION AND CERTIFICAT
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REFERENCES 749 62. Standard IEC 608
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REFERENCES 751 130. Dondero R, Zirk
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17 Photovoltaic Systems Klaus Preis
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PV POWER SYSTEM CONFIGURATION AND A
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COMPONENTS FOR PV SYSTEMS 785 NASA
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COMPONENTS FOR PV SYSTEMS 787 volta
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COMPONENTS FOR PV SYSTEMS 789 well
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COMPONENTS FOR PV SYSTEMS 791 A sig
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COMPONENTS FOR PV SYSTEMS 793 In st
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FUTURE DEVELOPMENTS IN PHOTOVOLTAIC
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REFERENCES 797 CL Controllable load
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18 Electrochemical Storage for Phot
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GENERAL CONCEPT OF ELECTROCHEMICAL
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TYPICAL OPERATION CONDITIONS OF BAT
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TYPICAL OPERATION CONDITIONS OF BAT
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Table 18.4 Overview of the technica
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INVESTMENT AND LIFETIME COST CONSID
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CONCLUSION 859 This example is just
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REFERENCES 861 10. Ruddell A et al.
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19 Power Conditioning for Photovolt
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CONTROLLERS AND MONITORING SYSTEMS
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INVERTERS 881 19.2 INVERTERS 19.2.1
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INVERTERS 883 Current [A] MPP Power
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INVERTERS 885 S1 S3 DC source AC ou
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INVERTERS 887 V PV V load t 0 t 1 t
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INVERTERS 889 The resulting voltage
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INVERTERS 891 12 V 24 V 48 V 96 V 1
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INVERTERS 893 U DC voltage level U
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INVERTERS 895 100 55 Hz 50 Hz Frequ
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INVERTERS 897 S1 L C 1 C 2 AC outpu
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INVERTERS 899 Time delay Seconds Mi
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INVERTERS 901 Separated part of the
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REFERENCES 903 5. Gonzalez G, Hill
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906 ENERGY COLLECTED AND DELIVERED
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972 ECONOMIC ANALYSIS OF PV SYSTEMS
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1000 ECONOMIC ANALYSIS OF PV SYSTEM
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1002 ECONOMIC ANALYSIS OF PV SYSTEM
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22 PV in Architecture Tjerk H. Reij
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INTRODUCTION 1007 Figure 22.2 Integ
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PV IN ARCHITECTURE 1009 Figure 22.4
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PV IN ARCHITECTURE 1013 Heat load a
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PV IN ARCHITECTURE 1015 • aesthet
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BIPV BASICS 1027 22.3.1.2 Categorie
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BIPV BASICS 1029 Figure 22.34 Alute
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BIPV BASICS 1031 Figure 22.38 Solgr
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BIPV BASICS 1033 Figure 22.42 Canop
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BIPV BASICS 1035 cooling as possibl
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STEPS IN THE DESIGN PROCESS WITH PV
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STEPS IN THE DESIGN PROCESS WITH PV
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REFERENCES 1041 REFERENCES 1. Reije
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23 Photovoltaics and Development Jo
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ELECTRICITY AND DEVELOPMENT 1045 pe
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BREAKING THE CHAINS OF UNDERDEVELOP
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THE PV ALTERNATIVE 1049 was too exp
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THE PV ALTERNATIVE 1051 Basic light
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THE PV ALTERNATIVE 1053 (for a deta
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THE PV ALTERNATIVE 1055 issued by t
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THE PV ALTERNATIVE 1057 Needless to
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THE PV ALTERNATIVE 1059 exports bal
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FOUR EXAMPLES OF PV RURAL ELECTRIFI
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REFERENCES 1069 standard of living
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REFERENCES 1071 36. Martinot E et a
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1074 FINANCING PV GROWTH 1995 : The
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1076 FINANCING PV GROWTH 24.2.3 Cap
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1078 FINANCING PV GROWTH can range
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1080 FINANCING PV GROWTH 24.4.2 Typ
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1082 FINANCING PV GROWTH 24.4.5 Exa
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1084 FINANCING PV GROWTH Such PV sy
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1086 FINANCING PV GROWTH approved a
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1088 FINANCING PV GROWTH Ghana: ren
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1090 FINANCING PV GROWTH Table 24.3
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1092 FINANCING PV GROWTH with succe
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1094 FINANCING PV GROWTH 24.8.2 Dir
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1096 FINANCING PV GROWTH using a 40
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1098 FINANCING PV GROWTH Current do
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1100 FINANCING PV GROWTH 3503 RE Ut
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1102 FINANCING PV GROWTH was capita
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1104 FINANCING PV GROWTH Policy and
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1106 FINANCING PV GROWTH E-mail: We
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1108 FINANCING PV GROWTH Triodos Ba
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1110 FINANCING PV GROWTH Contact: G
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1112 FINANCING PV GROWTH Phone: 94
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1114 FINANCING PV GROWTH Fax: 91 11
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Index Index Terms Links A a-Si see
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Index Terms Links III-V multijuncti
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Index Terms Links module temperatur
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Index Terms Links CdTe modules 651
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Index Terms Links early demonstrati
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Index Terms Links crystalline silic
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Index Terms Links daily irradiation
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Index Terms Links module fabricatio
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Index Terms Links electricity produ
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Index Terms Links extensive variabl
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Index Terms Links lattice matching
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Index Terms Links heat load and day
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Index Terms Links intensive variabl
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Index Terms Links chemistry 827 828
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Index Terms Links Meteosat weather
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Index Terms Links thin-film silicon
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Index Terms Links energy collection
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Index Terms Links powerguard flat-r
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Index Terms Links rooftop PV genera
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Index Terms Links Siemens Solar Bor
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Index Terms Links Sofrel flat-roof
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Index Terms Links Solar Terrestrial
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Index Terms Links SunPower Corporat
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Index Terms Links surface texture 3
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Index Terms Links waferin 223 224 2
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