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330 THIN-FILM SILICON SOLAR CELLS<br />

R,A<br />

1.0<br />

0.9<br />

0.8<br />

0.7<br />

0.6<br />

0.5<br />

0.4<br />

0.3<br />

0.2<br />

0.1<br />

0.0<br />

Si<br />

Al<br />

5 µm<br />

Reflectance<br />

Absorption in metal<br />

Absorption in Si<br />

5 µm<br />

15 µm<br />

15 µm<br />

5 µm<br />

15 µm<br />

0.4 0.6 0.8 1.0 1.2<br />

Wavelength<br />

[µm]<br />

Figure 8.15 Calculated values of reflectance, Si absorbance, and metal absorbance for two<br />

cells, 5 µm and 15 µm thick, showing mechanisms of the enhanced absorption. The cells have<br />

front-polished and back-textured configuration. Texture height was 1.0 µm<br />

MACD<br />

[mA/cm 2 ]<br />

40<br />

38<br />

36<br />

34<br />

32<br />

30<br />

28<br />

26<br />

24<br />

22<br />

20<br />

18<br />

16<br />

14<br />

(a)<br />

(b)<br />

(c)<br />

Front textured/back textured<br />

Front textured/back polished<br />

Front polished/back textured<br />

Experimental data from Kaneka<br />

0 5 10 15 20<br />

Cell thickness<br />

[µm]<br />

Si<br />

Al<br />

Si<br />

Al<br />

Si<br />

Al<br />

Figure 8.16 Calculated maximum photocurrent generated in a cell with light-trapping involving<br />

a metal reflector<br />

the film thickness has reached about 10 µm. Furthermore, texturing at both interfaces<br />

appears to be the most suitable cell configuration. Figure 8.16 includes experimental data<br />

from Kaneka [45, 46]; the solid points show excellent agreement with calculated results.<br />

One can deduce the effect of light-trapping by comparing J SC values in Figures 8.1 and<br />

8.3 for the same thickness of the cell. In Figure 8.1, the thickness required to generate<br />

a J SC of 34 mA/cm 2 is 80 µm. However, the structures of Figure 8.16 can produce the<br />

same values of J SC for a thickness of about 10 µm – a factor of 8 thinner.

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