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CdTe THIN-FILM SOLAR CELLS 647<br />

30<br />

Room temperature<br />

100 mW/cm 2<br />

Current density<br />

[mA/cm 2 ]<br />

20<br />

10<br />

0<br />

Initial<br />

1 day<br />

2 days<br />

10 days<br />

50 days<br />

−10<br />

−20<br />

−0.5 0.0 0.5 1.0<br />

Voltage<br />

[V]<br />

Figure 14.23 J –V of CdTe cells following extended exposure to 100 ◦ CatV OC [168]<br />

showing an increase in rollover as temperature is decreased or as time at open-circuit<br />

100 ◦ C stress is increased. As the temperature of the J –V measurement is reduced, the<br />

acceptor concentration decreases, resulting in the back-barrier height exerting a greater<br />

effect, as shown in Figure 14.20. The rollover in the stressed devices could likewise be<br />

due to a reduction in carrier density in the CdTe layer.<br />

There is conflicting evidence of the dependence of CdTe cell performance changes<br />

with stress temperature, but one study [169] has deduced an empirical activation energy<br />

near 1 eV, which predicts that J –V changes at 100 ◦ C are accelerated 500 to 1000 times<br />

compared to a typical annual range of outdoor temperatures for solar panels. Hence,<br />

one would not expect significant performance changes for modules until they had been<br />

deployed in the field for many years.<br />

Additional “stress” studies have shown that reductions in cell efficiency are smaller<br />

when the voltage bias is held at short circuit or maximum power, rather than at open<br />

circuit [169–171], or when less copper is used in the back contact [166]. The movement<br />

of copper out of the back-contact region is faster when forward bias reduces the electric<br />

field within the cell [169, 171–173], and it has at least two effects on cell performance.<br />

One is the increase in back-barrier height, similar to the copper-free case. The second is a<br />

detrimental effect on cell performance due to copper movement toward the front junction,<br />

probably enhanced by grain-boundary paths. There is no general agreement, however,<br />

on whether the copper causes an increase in CdTe recombination states, a change in the<br />

CdS layer, or possibly an increased overlap of the front and rear junctions by creating<br />

conducting filaments.<br />

There are a variety of possible optical losses before the photons reach a CdTe solar<br />

cell’s absorber, and there are additional optical losses due to incomplete absorption of

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