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214 BULK CRYSTAL GROWTH AND WAFERING FOR PV Table 6.1 AM1.5 cell efficiencies for non-textured BSF cells on tri-Si and mono-Si substrates. Cell area is 103 × 103 mm 2 pseudo square Material (non-textured) Thickness average [µm] Average efficiency [%] V OC [mV] I SC [mA/cm 2 ] FF [%] Rho [ohm cm] Tri-Si 140 15.5 615 33.4 75.5 4 Mono-Si 200 15.2 612 32.7 76 1 6.3 BULK MULTICRYSTALLINE SILICON Multicrystalline silicon besides monocrystalline silicon represents the basis of today’s photovoltaic technology. Multicrystalline silicon offers advantages over monocrystalline silicon with respect to manufacturing costs and feedstock tolerance at, however, slightly reduced efficiencies. Another inherent advantage of multicrystalline silicon is the rectangular or square wafer shape yielding a better utilisation of the module area in comparison to the mostly round or pseudosquare monocrystalline wafers. The efficiencies of multicrystalline silicon solar cells are affected by recombination-active impurity atoms and extended defects such as grain boundaries and dislocations. A key issue in achieving high solar cell efficiencies is a perfect temperature profile of both ingot fabrication and solar cell processing in order to control the number and the electrical activity of extended defects. Moreover, the implementation of hydrogen-passivation steps in solar cell processing turned out to be of particular importance for multicrystalline silicon. With the introduction of modern hydrogen-passivation steps by Si 3 N 4 layer deposition, the efficiencies of industrial multicrystalline silicon solar cells were boosted to the 14 to 15% efficiency range and consequently market shares were continuously shifted towards multicrystalline silicon as the standard material of photovoltaics. 6.3.1 Ingot Fabrication Two different fabrication technologies for multicrystalline silicon, the Bridgman and the block-casting process (see illustrations in Figures 6.6 and 6.7) are employed. In both processes the solidification of high-quality multicrystalline silicon ingots with weights of 250 to 300 kg, dimensions of up to 70 × 70 cm 2 and heights of more than 30 cm have been successfully realised. While the Bridgman technology is a quite commonly used technique, the only two companies mainly employing the casting technology are Kyocera (Japan) and Deutsche Solar GmbH (Germany) [17, 18]. The main difference between both the techniques is that for the melting and crystallisation process only one crucible (Bridgman) is used, whereas for the crystallisation process a second crucible (block casting) is used. In the case of the Bridgman process, a silicon nitride (Si 3 N 4 )-coated quartz crucible is usually employed for melting of the silicon raw material and subsequent solidification of the multicrystalline ingot. The Si 3 N 4 coating thereby serves as an anti-sticking layer preventing the adhesion of the silicon ingot to the quartz crucible walls that owing to the volume expansion during crystallisation of the silicon material would inevitably lead to a destruction of both the silicon ingot and the crucible. Concerning the block-casting
BULK MULTICRYSTALLINE SILICON 215 Inductive heating Liquid silicon Directionally solidified silicon Solid−liquid interface Figure 6.6 Conventional Bridgman technique that still is mainly used for the fabrication of multicrystalline ingots. Both melting and crystallisation of the silicon is performed in a Si 3 N 4 -coated quartz crucible. Crystallisation is realised by slowly moving downward the liquid silicon-containing crucible out of the inductively heated hot zone of the process chamber Solid−liquid interface Directionally solidified silicon Inductive heating Liquid silicon Casting Crystallization Figure 6.7 Block-casting process for the fabrication of multicrystalline silicon. After melting the silicon in a quartz pot, the silicon is poured into a second quartz crucible with a Si 3 N 4 coating. The heating elements of the crystallisation crucible are not shown in the figure. In comparison with the Bridgman technique (see Figure 6.6), shorter crystallisation and cooling times can be realised by employing a more variable heater system
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Handbook of Photovoltaic Science an
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We dedicate this book to all those
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xxiv LIST OF CONTRIBUTORS Phone: +1
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xxvi LIST OF CONTRIBUTORS 28040 Mad
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Contents List of Contributors xxiii
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CONTENTS ix 4.3.1 The Balance Equat
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CONTENTS xi 7.4 Manufacturing Proce
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CONTENTS xiii 9.8 Future-generation
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CONTENTS xv 12.1.2 Designs for Amor
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CONTENTS xvii 14.3.3 CdS/CdTe Inter
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CONTENTS xix 18.2.2 Batteries with
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CONTENTS xxi 22.2 PV in Architectur
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1 Status, Trends, Challenges and th
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WHAT IS PHOTOVOLTAICS? 3 1.2 WHAT I
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SIX MYTHS OF PHOTOVOLTAICS 5 Sunlig
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SIX MYTHS OF PHOTOVOLTAICS 7 of 10
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SIX MYTHS OF PHOTOVOLTAICS 9 2500 W
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HISTORY OF PHOTOVOLTAICS 11 the maj
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HISTORY OF PHOTOVOLTAICS 13 the USA
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PV COSTS, MARKETS AND FORECASTS 15
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PV COSTS, MARKETS AND FORECASTS 17
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GOALS OF PV RESEARCH AND MANUFACTUR
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GLOBAL TRENDS IN PERFORMANCE AND AP
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CRYSTALLINE SILICON PROGRESS AND CH
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CRYSTALLINE SILICON PROGRESS AND CH
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THIN FILM PROGRESS AND CHALLENGES 2
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THIN FILM PROGRESS AND CHALLENGES 2
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CONCENTRATION PV SYSTEMS 31 reality
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BALANCE OF SYSTEMS 33 Percentage of
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BALANCE OF SYSTEMS 35 Total capital
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FUTURE OF EMERGING PV TECHNOLOGIES
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CONCLUSIONS 39 Yet, in all these al
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REFERENCES 41 the other hand, hybri
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REFERENCES 43 69. Mickelson R, Chen
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46 MOTIVATION FOR PV APPLICATION AN
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62 THE PHYSICS OF THE SOLAR CELL Su
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64 THE PHYSICS OF THE SOLAR CELL 3.
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66 THE PHYSICS OF THE SOLAR CELL E
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72 THE PHYSICS OF THE SOLAR CELL an
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74 THE PHYSICS OF THE SOLAR CELL pr
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76 THE PHYSICS OF THE SOLAR CELL No
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80 THE PHYSICS OF THE SOLAR CELL El
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82 THE PHYSICS OF THE SOLAR CELL wh
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84 THE PHYSICS OF THE SOLAR CELL n
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86 THE PHYSICS OF THE SOLAR CELL Th
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88 THE PHYSICS OF THE SOLAR CELL Th
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94 THE PHYSICS OF THE SOLAR CELL Ta
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96 THE PHYSICS OF THE SOLAR CELL cu
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100 THE PHYSICS OF THE SOLAR CELL 5
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102 THE PHYSICS OF THE SOLAR CELL I
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106 THE PHYSICS OF THE SOLAR CELL T
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108 THE PHYSICS OF THE SOLAR CELL S
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114 THEORETICAL LIMITS OF PHOTOVOLT
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5 Solar Grade Silicon Feedstock Bru
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SILICON 155 faces of silicon are (1
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SILICON 157 powder in the presence
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SILICON 159 5.2.4.1.2 Wrought alloy
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PRODUCTION OF METALLURGICAL GRADE S
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Page 197 and 198: CURRENT SILICON FEEDSTOCK TO SOLAR
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Page 201 and 202: REQUIREMENTS OF SILICON FOR CRYSTAL
Page 215 and 216: ROUTES TO SOLAR GRADE SILICON 193 c
Page 217 and 218: ROUTES TO SOLAR GRADE SILICON 195 c
Page 219 and 220: ROUTES TO SOLAR GRADE SILICON 197 d
Page 221 and 222: ROUTES TO SOLAR GRADE SILICON 199 d
Page 223 and 224: CONCLUSIONS 201 2. Another German c
Page 225 and 226: REFERENCES 203 34. Fischler S, J. A
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Page 229 and 230: BULK MONOCRYSTALLINE MATERIAL 207 b
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Page 245 and 246: WAFERING 223 This in turn verifies
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Page 251 and 252: WAFERING 229 6.4.3 Wafer Quality an
Page 253 and 254: SILICON RIBBON AND FOIL PRODUCTION
Page 267 and 268: NUMERICAL SIMULATIONS OF CRYSTAL GR
Page 273 and 274: CONCLUSIONS 251 the supercooling de
Page 275 and 276: REFERENCES 253 28. Sahoo R et al.,
Page 277 and 278: 7 Crystalline Silicon Solar Cells a
Page 279 and 280: CRYSTALLINE SILICON AS A PHOTOVOLTA
Page 281 and 282: CRYSTALLINE SILICON SOLAR CELLS 259
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CRYSTALLINE SILICON SOLAR CELLS 265
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MANUFACTURING PROCESS 271 The most
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MANUFACTURING PROCESS 273 3. Textur
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MANUFACTURING PROCESS 275 materials
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MANUFACTURING PROCESS 277 nearly 50
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MANUFACTURING PROCESS 279 Figure 7.
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VARIATIONS TO THE BASIC PROCESS 281
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MULTICRYSTALLINE CELLS 283 of defec
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MULTICRYSTALLINE CELLS 285 better s
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MULTICRYSTALLINE CELLS 287 Figure 7
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OTHER INDUSTRIAL APPROACHES 289 TCO
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CRYSTALLINE SILICON PHOTOVOLTAIC MO
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CRYSTALLINE SILICON PHOTOVOLTAIC MO
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ELECTRICAL AND OPTICAL PERFORMANCE
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FIELD PERFORMANCE OF MODULES 301 7.
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REFERENCES 303 REFERENCES 1. Luque
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REFERENCES 305 75. Lenkeit B et al.
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8 Thin-film Silicon Solar Cells Bhu
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INTRODUCTION 309 Open circuit volta
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A REVIEW OF CURRENT THIN-FILM SI CE
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CVD Excimer laser crystallization U
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n-type silicon (0.2 µm) p-type sil
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DESIGN CONCEPTS OF TF-SI SOLAR CELL
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CONCLUSION 353 Introduction of H af
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REFERENCES 355 17. Kamins T, Ed, Po
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REFERENCES 357 98. Symko M, Sopori
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360 HIGH-EFFICIENCY III-V MULTIJUNC
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10 Space Solar Cells and Arrays She
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THE HISTORY OF SPACE SOLAR CELLS 41
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THE CHALLENGE FOR SPACE SOLAR CELLS
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SILICON SOLAR CELLS 425 Figure 10.7
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III-V SOLAR CELLS 427 n+-GaAs n-AlI
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III-V SOLAR CELLS 429 missions with
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SPACE SOLAR ARRAYS 431 supported af
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SPACE SOLAR ARRAYS 433 JPL-25888AC
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SPACE SOLAR ARRAYS 435 Figure 10.13
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SPACE SOLAR ARRAYS 437 Figure 10.15
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SPACE SOLAR ARRAYS 439 0.31 Astrono
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FUTURE CELL AND ARRAY POSSIBILITIES
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FUTURE CELL AND ARRAY POSSIBILITIES
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POWER SYSTEM FIGURES OF MERIT 445 A
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REFERENCES 447 8. Statler R, Curtin
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11 Photovoltaic Concentrators Richa
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INTRODUCTION 451 markets most often
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BASIC TYPES OF CONCENTRATORS 453 ha
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BASIC TYPES OF CONCENTRATORS 455 is
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BASIC TYPES OF CONCENTRATORS 457 sk
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BASIC TYPES OF CONCENTRATORS 459 Ho
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HISTORICAL OVERVIEW 461 thereafter.
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HISTORICAL OVERVIEW 463 Figure 11.6
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HISTORICAL OVERVIEW 465 production
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HISTORICAL OVERVIEW 467 Figure 11.1
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HISTORICAL OVERVIEW 469 n + bussbar
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HISTORICAL OVERVIEW 471 array [33].
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HISTORICAL OVERVIEW 473 Solar radia
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OPTICS OF CONCENTRATORS 475 q max,
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OPTICS OF CONCENTRATORS 477 If r 1
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OPTICS OF CONCENTRATORS 479 r i Med
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OPTICS OF CONCENTRATORS 481 When θ
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OPTICS OF CONCENTRATORS 483 filled
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OPTICS OF CONCENTRATORS 485 q i q i
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OPTICS OF CONCENTRATORS 487 For lar
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OPTICS OF CONCENTRATORS 489 on a co
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OPTICS OF CONCENTRATORS 491 gleaned
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OPTICS OF CONCENTRATORS 493 Solar c
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CURRENT CONCENTRATOR ACTIVITIES 495
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REFERENCES 501 11. Boes E, “Photo
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REFERENCES 503 60. Uematsu T et al.
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506 AMORPHOUS SILICON-BASED SOLAR C
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13 Cu(InGa)Se 2 Solar Cells William
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INTRODUCTION 569 CdS. The latter en
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MATERIAL PROPERTIES 571 Even though
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MATERIAL PROPERTIES 573 800 d 785 T
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MATERIAL PROPERTIES 575 3.2 x = 0.2
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MATERIAL PROPERTIES 577 1µm Figure
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DEPOSITION METHODS 579 though other
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DEPOSITION METHODS 581 much higher
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DEPOSITION METHODS 583 in the tempe
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JUNCTION AND DEVICE FORMATION 585 f
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JUNCTION AND DEVICE FORMATION 587 0
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JUNCTION AND DEVICE FORMATION 589 T
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JUNCTION AND DEVICE FORMATION 591 d
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DEVICE OPERATION 593 the voltage. F
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DEVICE OPERATION 595 1.0 0.8 500 80
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DEVICE OPERATION 597 1.4 V OC [Volt
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DEVICE OPERATION 599 13.5.3 The Cu(
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DEVICE OPERATION 601 Table 13.5 Hig
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MANUFACTURING ISSUES 603 can well f
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MANUFACTURING ISSUES 605 P1 P1 Mo G
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MANUFACTURING ISSUES 607 Finally, f
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THE Cu(InGa)Se 2 OUTLOOK 609 active
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REFERENCES 611 With all these chall
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REFERENCES 613 81. Stolt L, Hedstr
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REFERENCES 615 168. Fahrenbruch A,
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14 Cadmium Telluride Solar Cells Br
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INTRODUCTION 619 In contrast to p/n
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CdTe PROPERTIES AND THIN-FILM FABRI
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CdTe THIN-FILM SOLAR CELLS 631 orie
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CdTe THIN-FILM SOLAR CELLS 633 14.3
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CdTe THIN-FILM SOLAR CELLS 635 CdTe
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CdTe THIN-FILM SOLAR CELLS 639 800
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CdTe THIN-FILM SOLAR CELLS 641 10
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CdTe THIN-FILM SOLAR CELLS 645 forw
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CdTe THIN-FILM SOLAR CELLS 647 30 R
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CdTe THIN-FILM SOLAR CELLS 649 The
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CdTe MODULES 651 14.4 CdTe MODULES
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THE FUTURE OF CdTe-BASED SOLAR CELL
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THE FUTURE OF CdTe-BASED SOLAR CELL
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REFERENCES 657 This chapter has sho
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REFERENCES 659 60. Wei S, Mtg. Reco
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REFERENCES 661 152. McCandless B, Q
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15 Dye-sensitized Solar Cells Kohji
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INTRODUCTION TO DYE-SENSITIZED SOLA
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DSSC FABRICATION (η = 8%) 679 alko
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DSSC FABRICATION (η = 8%) 681 15.2
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NEW DEVELOPMENTS 683 of highly effi
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NEW DEVELOPMENTS 685 HOOC COOH HOOC
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NEW DEVELOPMENTS 687 photosensitize
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NEW DEVELOPMENTS 689 of these ionic
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APPROACH TO COMMERCIALIZATION 691 1
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Institute and reference Table 15.3
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SUMMARY AND PROSPECTS 695 Chemicals
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REFERENCES 697 4. Dare-Edwards M et
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REFERENCES 699 96. Tennakone K, Kum
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16 Measurement and Characterization
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RATING PV PERFORMANCE 703 Spectral
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λ [nm] Table 16.3 AM0 standard sol
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171.5 7.01E − 1 372.5 1074 573.5
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228.5 52.940 429.5 1501 630.7 1682
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288.5 328.400 489.5 1994 689.1 1506
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RATING PV PERFORMANCE 713 The extra
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RATING PV PERFORMANCE 715 of about
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RATING PV PERFORMANCE 717 Energy [W
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RATING PV PERFORMANCE 719 16.2.4 Tr
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CURRENT VERSUS VOLTAGE MEASUREMENTS
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MODULE QUALIFICATION AND CERTIFICAT
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REFERENCES 747 REFERENCES 1. Emery
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REFERENCES 749 62. Standard IEC 608
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REFERENCES 751 130. Dondero R, Zirk
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17 Photovoltaic Systems Klaus Preis
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PV POWER SYSTEM CONFIGURATION AND A
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COMPONENTS FOR PV SYSTEMS 785 NASA
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COMPONENTS FOR PV SYSTEMS 787 volta
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COMPONENTS FOR PV SYSTEMS 789 well
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COMPONENTS FOR PV SYSTEMS 791 A sig
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COMPONENTS FOR PV SYSTEMS 793 In st
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FUTURE DEVELOPMENTS IN PHOTOVOLTAIC
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REFERENCES 797 CL Controllable load
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18 Electrochemical Storage for Phot
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GENERAL CONCEPT OF ELECTROCHEMICAL
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TYPICAL OPERATION CONDITIONS OF BAT
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TYPICAL OPERATION CONDITIONS OF BAT
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Table 18.4 Overview of the technica
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INVESTMENT AND LIFETIME COST CONSID
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CONCLUSION 859 This example is just
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REFERENCES 861 10. Ruddell A et al.
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19 Power Conditioning for Photovolt
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CONTROLLERS AND MONITORING SYSTEMS
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INVERTERS 881 19.2 INVERTERS 19.2.1
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INVERTERS 883 Current [A] MPP Power
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INVERTERS 885 S1 S3 DC source AC ou
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INVERTERS 887 V PV V load t 0 t 1 t
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INVERTERS 889 The resulting voltage
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INVERTERS 891 12 V 24 V 48 V 96 V 1
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INVERTERS 893 U DC voltage level U
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INVERTERS 895 100 55 Hz 50 Hz Frequ
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INVERTERS 897 S1 L C 1 C 2 AC outpu
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INVERTERS 899 Time delay Seconds Mi
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INVERTERS 901 Separated part of the
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REFERENCES 903 5. Gonzalez G, Hill
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906 ENERGY COLLECTED AND DELIVERED
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972 ECONOMIC ANALYSIS OF PV SYSTEMS
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1000 ECONOMIC ANALYSIS OF PV SYSTEM
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1002 ECONOMIC ANALYSIS OF PV SYSTEM
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22 PV in Architecture Tjerk H. Reij
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INTRODUCTION 1007 Figure 22.2 Integ
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PV IN ARCHITECTURE 1009 Figure 22.4
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PV IN ARCHITECTURE 1013 Heat load a
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PV IN ARCHITECTURE 1015 • aesthet
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BIPV BASICS 1027 22.3.1.2 Categorie
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BIPV BASICS 1029 Figure 22.34 Alute
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BIPV BASICS 1031 Figure 22.38 Solgr
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BIPV BASICS 1033 Figure 22.42 Canop
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BIPV BASICS 1035 cooling as possibl
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STEPS IN THE DESIGN PROCESS WITH PV
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STEPS IN THE DESIGN PROCESS WITH PV
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REFERENCES 1041 REFERENCES 1. Reije
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23 Photovoltaics and Development Jo
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ELECTRICITY AND DEVELOPMENT 1045 pe
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BREAKING THE CHAINS OF UNDERDEVELOP
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THE PV ALTERNATIVE 1049 was too exp
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THE PV ALTERNATIVE 1051 Basic light
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THE PV ALTERNATIVE 1053 (for a deta
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THE PV ALTERNATIVE 1055 issued by t
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THE PV ALTERNATIVE 1057 Needless to
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THE PV ALTERNATIVE 1059 exports bal
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FOUR EXAMPLES OF PV RURAL ELECTRIFI
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REFERENCES 1069 standard of living
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REFERENCES 1071 36. Martinot E et a
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1074 FINANCING PV GROWTH 1995 : The
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1076 FINANCING PV GROWTH 24.2.3 Cap
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1078 FINANCING PV GROWTH can range
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1080 FINANCING PV GROWTH 24.4.2 Typ
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1082 FINANCING PV GROWTH 24.4.5 Exa
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1084 FINANCING PV GROWTH Such PV sy
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1086 FINANCING PV GROWTH approved a
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1088 FINANCING PV GROWTH Ghana: ren
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1090 FINANCING PV GROWTH Table 24.3
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1092 FINANCING PV GROWTH with succe
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1094 FINANCING PV GROWTH 24.8.2 Dir
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1096 FINANCING PV GROWTH using a 40
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1098 FINANCING PV GROWTH Current do
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1100 FINANCING PV GROWTH 3503 RE Ut
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1102 FINANCING PV GROWTH was capita
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1104 FINANCING PV GROWTH Policy and
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1106 FINANCING PV GROWTH E-mail: We
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1108 FINANCING PV GROWTH Triodos Ba
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1110 FINANCING PV GROWTH Contact: G
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1112 FINANCING PV GROWTH Phone: 94
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1114 FINANCING PV GROWTH Fax: 91 11
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Index Index Terms Links A a-Si see
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Index Terms Links III-V multijuncti
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Index Terms Links module temperatur
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Index Terms Links CdTe modules 651
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Index Terms Links early demonstrati
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Index Terms Links crystalline silic
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Index Terms Links daily irradiation
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Index Terms Links module fabricatio
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Index Terms Links electricity produ
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Index Terms Links extensive variabl
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Index Terms Links lattice matching
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Index Terms Links heat load and day
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Index Terms Links intensive variabl
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Index Terms Links chemistry 827 828
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Index Terms Links Meteosat weather
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Index Terms Links thin-film silicon
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Index Terms Links energy collection
Page 1177 and 1178:
Index Terms Links powerguard flat-r
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Index Terms Links rooftop PV genera
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Index Terms Links Siemens Solar Bor
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Index Terms Links Sofrel flat-roof
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Index Terms Links Solar Terrestrial
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Index Terms Links SunPower Corporat
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Index Terms Links surface texture 3
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Index Terms Links waferin 223 224 2
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