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MANUFACTURING ISSUES 605<br />

P1<br />

P1<br />

Mo<br />

Glass substrate<br />

P2<br />

P2<br />

HR ZnO<br />

CdS<br />

Cu(InGa)Se 2<br />

P3<br />

P3<br />

TCO<br />

Figure 13.22 Schematic description of the manufacturing steps to make monolithic interconnections<br />

for thin-film Cu(InGa)Se 2 PV modules<br />

19<br />

18<br />

Cells > 1 cm 2<br />

NREL<br />

Conversion efficiency<br />

[%]<br />

17<br />

16<br />

15<br />

14<br />

13<br />

12<br />

11<br />

10<br />

9<br />

8<br />

Mini-modules < 100 cm 2<br />

Modules > 3000 cm 2<br />

ARCO<br />

Boeing NREL NREL<br />

Siemens<br />

Siemens<br />

IPE<br />

Solarex<br />

Showa<br />

Siemens<br />

ÅSC<br />

Siemens<br />

Siemens<br />

ÅSC<br />

ÅSC - Ångstrom Solar Center, Uppsala University<br />

IPE - Institut fur Physikalische Elektronik, Stuttgart University<br />

NREL - National Renewable Energy Laboratory, USA<br />

1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001<br />

Year<br />

Figure 13.23 Evolution of Cu(InGa)Se 2 device record efficiencies in the past decade. All data<br />

are taken from the Solar Cell Efficiency Tables periodically published in Progress in Photovoltaics

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