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OVERVIEW 507<br />

After several years of uncertainty, it emerged that plasma-deposited amorphous silicon<br />

contained a significant percentage of hydrogen atoms bonded into the amorphous silicon<br />

structure and that these hydrogen atoms were essential to the improvement of the electronic<br />

properties of the plasma-deposited material [9]. As a consequence, the improved<br />

form of amorphous silicon has generally been known as hydrogenated amorphous silicon<br />

(or, more briefly, a-Si:H). In recent years, many authors have used the term amorphous<br />

silicon to refer to the hydrogenated form, which acknowledges that the unhydrogenated<br />

forms of amorphous silicon are only infrequently studied today.<br />

Why was there so much excitement about the amorphous silicon solar cells fabricated<br />

by Carlson and Wronski? First, the technology involved is relatively simple and<br />

inexpensive compared to the technologies for growing crystals. Additionally, the optical<br />

properties of amorphous silicon are very promising for collecting solar energy, as<br />

we now explain. In Figure 12.2, the upper panel shows the spectrum for the optical<br />

absorption coefficients α(hν) for amorphous silicon and for crystalline silicon [10]. 2 In<br />

the lower panel of the figure, we show the spectrum of the “integrated solar irradiance;”<br />

this is the intensity (in W/m 2 ) of the solar energy carried by photons above an energy<br />

threshold hν [11].<br />

10 5<br />

Absorption a<br />

[cm −1 ]<br />

10 4<br />

10 3<br />

10 2<br />

10 1<br />

10 0<br />

a-Si:H<br />

c-Si<br />

Solar irradiance above hn<br />

[W/m 2 ]<br />

800<br />

600<br />

400<br />

200<br />

0<br />

a-Si:H (500 nm)<br />

Transmitted<br />

Absorbed<br />

0 1 2 3<br />

Photon energy hn<br />

[eV]<br />

Figure 12.2 (Upper panel) Spectra of the optical absorption coefficient α(hν) as a function of<br />

photon energy hν for crystalline silicon (c-Si) and for hydrogenated amorphous silicon (a-Si:H).<br />

(Lower panel) The solid curve indicates the irradiance of photons in the solar spectrum with energies<br />

hν or larger. An a-Si:H film that is 500 nm thick mostly absorbs photons above 1.9 eV; as indicated<br />

by the shaded areas, this corresponds to an absorbed irradiance of about 390 W/m 2 .AfterVaněček<br />

M et al., J. Non-Cryst. Solids 227–230, 967 (1998) [10]<br />

2 We assume familiarity with the concept of a photon energy hν and of an optical absorption coefficient α; see<br />

Chapter 3.

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