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FUNDAMENTAL PROPERTIES OF SEMICONDUCTORS 73<br />

10 7 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br />

10 6<br />

GaAs<br />

Absorption coefficient<br />

[1/cm]<br />

10 5<br />

10 4<br />

10 3<br />

Si<br />

10 2<br />

10 1<br />

Energy<br />

[eV]<br />

Figure 3.8 Absorption coefficient as a function of photon energy for Si (indirect band gap) and<br />

GaAs (direct band gap) at 300 K. Their band gaps are 1.12 and 1.4 eV, respectively<br />

Since both a phonon and an electron are needed to make the indirect gap absorption<br />

process possible, the absorption coefficient depends not only on the density of full initial<br />

electron states and empty final electron states but also on the availability of phonons<br />

(both emitted and absorbed) with the required momentum. Thus, compared to direct<br />

transitions, the absorption coefficient for indirect transitions is relatively small. As a<br />

result, light penetrates more deeply into indirect band gap semiconductors than direct<br />

band gap semiconductors. This is illustrated in Figure 3.8 for Si, an indirect band gap<br />

semiconductor, and GaAs, a direct band gap semiconductor. Similar spectra are shown<br />

for other semiconductors elsewhere in this handbook.<br />

In both direct band gap and indirect band gap materials, a number of photon absorption<br />

processes are involved, though the mechanisms described above are the dominant<br />

ones. A direct transition, without phonon assistance, is possible in indirect band gap materials<br />

if the photon energy is high enough (as seen in Figure 3.8 for Si at about 3.3 eV).<br />

Conversely, in direct band gap materials, phonon-assisted absorption is also a possibility.<br />

Other mechanisms may also play a role in defining the absorption process in semiconductors.<br />

These include absorption in the presence of an electric field (the Franz–Keldysh<br />

effect), absorption aided by localized states in the forbidden gap, and degeneracy effects<br />

when a significant number of states in the conduction band are not empty and/or when<br />

a significant number of state in the valence band are not full, as can happen in heavily<br />

doped materials (BGN) and under high-level injection (the Burstein–Moss shift). The net<br />

absorption coefficient is then the sum of the absorption coefficients due to all absorption

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