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316 THIN-FILM SILICON SOLAR CELLS<br />

Active layer<br />

∼60 µm<br />

Front<br />

electrode<br />

Substrate<br />

~600 µm<br />

AR coating<br />

textured surface<br />

Oxidation of Si substrate<br />

Polycrystalline Si deposition<br />

Encapsulating layer deposition<br />

Zone-melting recrystallization<br />

BSF/active-layer deposition<br />

pn junction<br />

60 µm<br />

Thin-film Si<br />

Rear<br />

electrode<br />

SiO 2<br />

Si substrate<br />

Texturing etch<br />

AR coating<br />

Front-electrode formation<br />

Backside etching<br />

H + ion implantation<br />

Rear-electrode formation<br />

Figure 8.7 A schematic of the structure of the ZMR solar cell with a 60-µm poly-Si active<br />

thickness, and an illustration of the process steps involved in cell fabrication<br />

Following the success of researchers who fabricated thin cells using conventional<br />

technology of wafer thinning and device processing, several laboratories began investigating<br />

alternate methods to produce thin films of Si in which production of Si film and<br />

cell processing are compatible. Some of the considerations that went into the qualitative<br />

cell design are identified below.<br />

Efficient carrier generation. Thin Si films have an inherent drawback of being weakly<br />

absorbing in a significant region of the solar spectrum. A well-known solution to this<br />

issue is to incorporate light-trapping by creating surface roughness or texture. The initial<br />

attempts at fabricating TF-Si cells relied heavily on this approach. In most cases, back<br />

reflections were expected to come from refractive-index discontinuity at the backside<br />

of the film and the film support. Some of the approaches resemble those used in a-Si<br />

technology. But there are many issues that still remain unresolved about the light trapping<br />

in thin films. Some of the details of light-trapping and its applications to thin cells are<br />

discussed in the next section.<br />

Efficient carrier collection. Although TF-Si cells are expected to perform well with poor<br />

material quality, the minority-carrier diffusion length must still be longer than the film<br />

thickness. An approach that can circumvent this restriction is to use a pin structure or<br />

multiple junctions, in a manner similar to that in a-Si solar cells.<br />

Mechanical support. A thin Si film, less than 10 µm thick, is not a self-standing structure;<br />

it needs a support. Typically, two approaches may be used for supporting thin-film solar<br />

cells: (1) the cell is fabricated on a temporary substrate that has suitable properties to<br />

participate in the device processing, and it is then transferred or lifted off to a permanent<br />

support. In this case, the cell fabrication itself can be done using conventional processes,

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