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342 THIN-FILM SILICON SOLAR CELLS<br />

16<br />

S = 100 cm/s<br />

12<br />

J<br />

[mA/cm 2 ]<br />

8<br />

S = 1000 cm/s<br />

4<br />

0<br />

0.0 0.1 0.2 0.3 0.4 0.5 0.6<br />

Voltage<br />

[V]<br />

(a)<br />

16<br />

12<br />

J<br />

[mA/cm 2 ]<br />

8<br />

4<br />

S = 100 cm/s<br />

S = 1000 cm/s<br />

0<br />

0.0 0.1 0.2 0.3 0.4 0.5 0.6<br />

Voltage<br />

[V]<br />

(b)<br />

Figure 8.25 The calculated J–V curves for different grain boundary interface recombination velocities<br />

(S). In the figures, S changes from 1000 cm/s to 100 cm/s in steps of 100 cm/s. Other parameters<br />

are given in Table 8.4. The grain sizes used in the calculations are: (a) 5 µm; (b) 0.5 µm [19]

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