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REQUIREMENTS OF SILICON FOR CRYSTALLINE SOLAR CELLS 191<br />

Temperature<br />

[°C]<br />

10 18 1400 1300 12001100 1000 900 800 700 600 500<br />

10 −5<br />

10 17<br />

Co<br />

10 −6<br />

10 16<br />

Mn<br />

Cu<br />

10 −7<br />

Concentration<br />

[1/cm 3 ]<br />

10 15<br />

Ti<br />

Ni<br />

10 −8<br />

Concentration<br />

10 14 10 −10<br />

Cr<br />

10 −9<br />

10 13<br />

Fe<br />

Co<br />

10 12<br />

0.6<br />

0.7<br />

0.8 0.9<br />

1000/T<br />

[1/K 1 ]<br />

1.0 1.1 1.2 1.3<br />

Figure 5.10 Solid solubility of 3d transition elements in silicon. Sc is still missing, but is assumed<br />

to be a little below the values of Ti. Adapted from J. Appl. Phys. Weber E, A30, 1–22 1983, ©<br />

Springer-Verlag GmbH & Co. KG. The values for Ti are taken from [37]<br />

composition of several transition-metal precipitates in silicon identify crystalline silicides,<br />

FeSi 2, CoSi 2, NiSi 2, as compounds that influence the minority-carrier diffusion length.<br />

The morphology and density depend upon temperature and time at temperature. Elements<br />

having a high diffusivity like Ni and Cu precipitate easily. This reduces the number of<br />

atoms in solid solution and may therefore change the electric properties. Kittler and

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