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PCT/2000/51 - World Intellectual Property Organization

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<strong>51</strong>/<strong>2000</strong><br />

19262 <strong>PCT</strong> Gazette - Section I - Gazette du <strong>PCT</strong> 21 Dec/déc <strong>2000</strong><br />

CAVALIER ENTERRE AUTO-ALIGNE<br />

POUR TRANSISTORS VERTI-<br />

CAUX DANS DES MEMOIRES A<br />

SEMI-CONDUCTEURS<br />

(71) INFINEON TECHNOLOGIES NORTH<br />

AMERICA CORP. [US/US]; 1730 North<br />

First Street, San Jose, CA 9<strong>51</strong>12-6000<br />

(US). INTERNATIONAL BUSINESS MA-<br />

CHINES CORPORATION [US/US]; New<br />

Orchard Road, Armonk, NY 10504 (US).<br />

(72) MANDELMAN, Jack, A.; 5 Jamie Lane,<br />

Stormville, NY 12582 (US). GRUENING,<br />

Ulrike; 38 Town View Drive, Wappingers<br />

Falls, NY 12590 (US). MICHAELIS,<br />

Alexander; 3 Plaza Road, Wappingers Falls,<br />

NY 12590 (US).<br />

(74) PASCHBURG, Donald, B. et al. / etc.;<br />

Siemens Corporation - <strong>Intellectual</strong> <strong>Property</strong><br />

Dept., 186 Wood Avenue South, Iselin, NJ<br />

08830 (US).<br />

(81) CN JP KR.<br />

(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />

IE IT LU MC NL PT SE).<br />

Published / Publiée :(c)<br />

(<strong>51</strong>) 7 H01L 23/00, 29/00<br />

(11) WO 00/77849<br />

(21) <strong>PCT</strong>/US00/16017<br />

(13) A1<br />

(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />

(25) en (26) en<br />

(30) 09/330,788 11 Jun/juin 1999<br />

(11.06.1999)<br />

US<br />

(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />

(54) METHOD FOR IMPLEMENTING RE-<br />

SISTANCE, CAPACITANCE AND/OR<br />

INDUCTANCE IN AN INTEGRATED<br />

CIRCUIT<br />

PROCEDE POUR DOTER UN CIRCUIT<br />

INTEGRE DE PROPRIETES DE RESIS-<br />

TANCE, DE CAPACITE ET/OU D’IN-<br />

DUCTANCE<br />

(71) S3 INCORPORATED [US/US]; 2841 Mission<br />

College Boulevard, Santa Clara, CA<br />

95052-8058 (US).<br />

(72) HUANG, Chi-Jung; 20157 Chateau Drive,<br />

Saratoga, CA 95070 (US). PENG, Cai, Jung<br />

(Helen); 20911 Elenda Drive, Cupertino, CA<br />

95014 (US). LI, Ken, Ming; 3454 Notre<br />

Dame Drive, Santa Clara, CA 950<strong>51</strong> (US).<br />

(74) HAVERSTOCK, Thomas, B. et al. / etc.;<br />

Haverstock & Owens LLP, Suite 420, 260<br />

Sheridan Avenue, Palo Alto, CA 94306 (US).<br />

(81) JP KR.<br />

Published / Publiée :(a)<br />

(<strong>51</strong>) 7 H01L 23/12, B23K 20/00<br />

(11) WO 00/77850<br />

(21) <strong>PCT</strong>/JP00/03746<br />

(13) A1<br />

(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />

(25) ja (26) ja<br />

(30) 11/164454 10 Jun/juin 1999<br />

(10.06.1999)<br />

JP<br />

(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />

(54) CLAD PLATE FOR FORMING INTER-<br />

POSER FOR SEMICONDUCTOR DE-<br />

VICE, INTERPOSER FOR SEMICON-<br />

DUCTOR DEVICE, AND METHOD OF<br />

MANUFACTURING THEM<br />

PLAQUAGE DESTINE A FORMER UN<br />

ELEMENT INTERCALAIRE DANS UN<br />

DISPOSITIF A SEMI-CONDUCTEUR,<br />

UN TEL ELEMENT INTERCALAIRE,<br />

ET PROCEDE DE FABRICATION AS-<br />

SOCIE<br />

(71) TOYO KOHAN CO., LTD. [JP/JP]; 2-12,<br />

Yonbancho, Chiyoda-ku, Tokyo 102-8447<br />

(JP).<br />

(for all designated States except / pour tous<br />

les États désignés sauf US)<br />

(72, 75) SAIJO, Kinji [JP/JP]; Toyo Kohan<br />

Co., Ltd., Technical Research Laboratory,<br />

1296-1, Higashitoyoi, Kudamatsu-shi, Yamaguchi<br />

744-8611 (JP). YOSHIDA, Kazuo<br />

[JP/JP]; Toyo Kohan Co., Ltd., Technical<br />

Research Laboratory, 1296-1, Higashitoyoi,<br />

Kudamatsu-shi, Yamaguchi 744-8611 (JP).<br />

OKAMOTO, Hiroaki [JP/JP]; Toyo Kohan<br />

Co., Ltd., Technical Research Laboratory,<br />

1296-1, Higashitoyoi, Kudamatsu-shi, Yamaguchi<br />

744-8611 (JP). OHSAWA, Shinji<br />

[JP/JP]; Toyo Kohan Co., Ltd., Technical<br />

Research Laboratory, 1296-1, Higashitoyoi,<br />

Kudamatsu-shi, Yamaguchi 744-8611 (JP).<br />

(74) OHTA, Akio; Ohta Patent Office, New<br />

State Manor 356, 23-1, Yoyogi 2-chome,<br />

Shibuya-ku, Tokyo 1<strong>51</strong>-0053 (JP).<br />

(81) AE AG AL AM AT AU AZ BA BB BG BR<br />

BY CA CH CN CR CU CZ DE DK DM DZ<br />

EE ES FI GB GD GE GH GM HR HU ID IL<br />

IN IS JP KE KG KP KR KZ LC LK LR LS<br />

LT LU LV MA MD MG MK MN MW MX<br />

MZ NO NZ PL PT RO RU SD SE SG SI SK<br />

SL TJ TM TR TT TZ UA UG US UZ VN YU<br />

ZA ZW.<br />

(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />

UG ZW); EA (AM AZ BY KG KZ MD RU<br />

TJ TM); EP (AT BE CH CY DE DK ES FI FR<br />

GB GR IE IT LU MC NL PT SE); OA (BF BJ<br />

CF CG CI CM GA GN GW ML MR NE SN<br />

TD TG).<br />

(<strong>51</strong>) 7 H01L 23/29, 21/56<br />

(11) WO 00/778<strong>51</strong><br />

(21) <strong>PCT</strong>/JP99/07228<br />

(13) A1<br />

(22) 22 Dec/déc 1999 (22.12.1999)<br />

(25) ja (26) ja<br />

(30) 11/168861 15 Jun/juin 1999<br />

(15.06.1999)<br />

JP<br />

(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />

(54) METHOD OF PRODUCING EPOXY<br />

FOR MOLDING SEMICONDUCTOR<br />

DEVICE, MOLDING MATERIAL, AND<br />

SEMICONDUCTOR DEVICE<br />

PROCEDE DE PRODUCTION D’UNE<br />

RESINE EPOXY POUR LE MOULAGE<br />

D’UN DISPOSITIF A SEMI-CONDUC-<br />

TEUR, MATERIAU DE MOULAGE ET<br />

DISPOSITIF A SEMI-CONDUCTEUR<br />

(71) SUMITOMO BAKELITE COMPANY<br />

LIMITED [JP/JP]; 5-8, Higashishinagawa<br />

2-chome, Shinagawa-ku, Tokyo 140-0002<br />

(JP).<br />

(for all designated States except / pour tous<br />

les États désignés sauf US)<br />

(72, 75) TAKASAKI, Noriyuki [JP/JP];<br />

4334-14, Shimookamoto, Kawachimachi,<br />

Kawachi-gun, Tochigi 329-1104 (JP).<br />

TAKAYAMA, Kenji [JP/JP]; 25-26, Nakahara<br />

2-chome, Musashimurayama-shi, Tokyo<br />

208-0035 (JP). ANAI, Yoshiyuki [JP/JP];<br />

4673-1, Miyukihoncho, Utsunomiya-shi,<br />

Tochigi 321-0983 (JP).<br />

(74) ASAMURA, Kiyoshi et al. / etc.; Room 331,<br />

New Ohtemachi Building, 2-1, Ohtemachi<br />

2-chome, Chiyoda-ku, Tokyo 100-0004 (JP).<br />

(81) CN JP KR SG US.<br />

(<strong>51</strong>) 7 H01L 23/498, 23/64<br />

(11) WO 00/77852 (13) A1<br />

(21) <strong>PCT</strong>/FR00/01492<br />

(22) 30 May/mai <strong>2000</strong> (30.05.<strong>2000</strong>)<br />

(25) fr (26) fr<br />

(30) 99/07555 15 Jun/juin 1999 FR<br />

(15.06.1999)<br />

(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />

(54) METHOD FOR MAKING DEVICES<br />

COMPRISING A CHIP ASSOCIATED<br />

WITH A CIRCUIT ELEMENT AND<br />

RESULTING DEVICES<br />

PROCEDE DE REALISATION DE DIS-<br />

POSITIFS COMPRENANT UNE PUCE<br />

ASSOCIEE A UN ELEMENT DE CIR-<br />

CUIT ET DISPOSITIFS OBTENUS<br />

(71) GEMPLUS [FR/FR]; Avenue du Pic de<br />

Bertagne, Parc d’Activités de Gémenos,<br />

F-13881 Géménos (FR).<br />

(for all designated States except / pour tous<br />

les États désignés sauf US)<br />

(72, 75) FIDALGO, Jean-Christophe [FR/FR];<br />

4, rue de la Cortine, F-13420 Gémenos<br />

(FR). CALVAS, Bernard [FR/FR]; 30,<br />

Groupe Provence, Avenue de Verdun,<br />

F-13400 Aubagne (FR). PATRICE, Philippe<br />

[FR/FR]; Résidence Les Deux Moulins,<br />

Bâtiment D, Avenue Jean Roque, F-13190<br />

Allauch (FR).<br />

(74) MILHARO, Emilien; Gemplus, Boîte<br />

postale 100, F-13881 Gémenos Cedex (FR).<br />

(81) AE AG AL AM AT AU AZ BA BB BG BR<br />

BY CA CH CN CR CU CZ DE DK DM DZ<br />

EE ES FI GB GD GE GH GM HR HU ID IL<br />

IN IS JP KE KG KP KR KZ LC LK LR LS<br />

LT LU LV MA MD MG MK MN MW MX<br />

MZ NO NZ PL PT RO RU SD SE SG SI SK<br />

SL TJ TM TR TT TZ UA UG US UZ VN YU<br />

ZA ZW.<br />

(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />

UG ZW); EA (AM AZ BY KG KZ MD RU<br />

TJ TM); EP (AT BE CH CY DE DK ES FI FR<br />

GB GR IE IT LU MC NL PT SE); OA (BF BJ<br />

CF CG CI CM GA GN GW ML MR NE SN<br />

TD TG).<br />

(<strong>51</strong>) 7 H01L 23/525, 23/532<br />

(11) WO 00/77853<br />

(21) <strong>PCT</strong>/DE00/01897<br />

(13) A1<br />

(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />

(25) de (26) de<br />

(30) 199 26 499.6 10 Jun/juin 1999<br />

(10.06.1999)<br />

DE<br />

(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />

(54) ARRANGEMENT OF FUSES IN SEMI-<br />

CONDUCTOR STRUCTURES WITH Cu<br />

METALLIZATION<br />

CONFIGURATION DE FUSIBLES<br />

DANS DES STRUCTURES A

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