PCT/2000/51 - World Intellectual Property Organization
PCT/2000/51 - World Intellectual Property Organization
PCT/2000/51 - World Intellectual Property Organization
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<strong>51</strong>/<strong>2000</strong><br />
19262 <strong>PCT</strong> Gazette - Section I - Gazette du <strong>PCT</strong> 21 Dec/déc <strong>2000</strong><br />
CAVALIER ENTERRE AUTO-ALIGNE<br />
POUR TRANSISTORS VERTI-<br />
CAUX DANS DES MEMOIRES A<br />
SEMI-CONDUCTEURS<br />
(71) INFINEON TECHNOLOGIES NORTH<br />
AMERICA CORP. [US/US]; 1730 North<br />
First Street, San Jose, CA 9<strong>51</strong>12-6000<br />
(US). INTERNATIONAL BUSINESS MA-<br />
CHINES CORPORATION [US/US]; New<br />
Orchard Road, Armonk, NY 10504 (US).<br />
(72) MANDELMAN, Jack, A.; 5 Jamie Lane,<br />
Stormville, NY 12582 (US). GRUENING,<br />
Ulrike; 38 Town View Drive, Wappingers<br />
Falls, NY 12590 (US). MICHAELIS,<br />
Alexander; 3 Plaza Road, Wappingers Falls,<br />
NY 12590 (US).<br />
(74) PASCHBURG, Donald, B. et al. / etc.;<br />
Siemens Corporation - <strong>Intellectual</strong> <strong>Property</strong><br />
Dept., 186 Wood Avenue South, Iselin, NJ<br />
08830 (US).<br />
(81) CN JP KR.<br />
(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />
IE IT LU MC NL PT SE).<br />
Published / Publiée :(c)<br />
(<strong>51</strong>) 7 H01L 23/00, 29/00<br />
(11) WO 00/77849<br />
(21) <strong>PCT</strong>/US00/16017<br />
(13) A1<br />
(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />
(25) en (26) en<br />
(30) 09/330,788 11 Jun/juin 1999<br />
(11.06.1999)<br />
US<br />
(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />
(54) METHOD FOR IMPLEMENTING RE-<br />
SISTANCE, CAPACITANCE AND/OR<br />
INDUCTANCE IN AN INTEGRATED<br />
CIRCUIT<br />
PROCEDE POUR DOTER UN CIRCUIT<br />
INTEGRE DE PROPRIETES DE RESIS-<br />
TANCE, DE CAPACITE ET/OU D’IN-<br />
DUCTANCE<br />
(71) S3 INCORPORATED [US/US]; 2841 Mission<br />
College Boulevard, Santa Clara, CA<br />
95052-8058 (US).<br />
(72) HUANG, Chi-Jung; 20157 Chateau Drive,<br />
Saratoga, CA 95070 (US). PENG, Cai, Jung<br />
(Helen); 20911 Elenda Drive, Cupertino, CA<br />
95014 (US). LI, Ken, Ming; 3454 Notre<br />
Dame Drive, Santa Clara, CA 950<strong>51</strong> (US).<br />
(74) HAVERSTOCK, Thomas, B. et al. / etc.;<br />
Haverstock & Owens LLP, Suite 420, 260<br />
Sheridan Avenue, Palo Alto, CA 94306 (US).<br />
(81) JP KR.<br />
Published / Publiée :(a)<br />
(<strong>51</strong>) 7 H01L 23/12, B23K 20/00<br />
(11) WO 00/77850<br />
(21) <strong>PCT</strong>/JP00/03746<br />
(13) A1<br />
(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />
(25) ja (26) ja<br />
(30) 11/164454 10 Jun/juin 1999<br />
(10.06.1999)<br />
JP<br />
(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />
(54) CLAD PLATE FOR FORMING INTER-<br />
POSER FOR SEMICONDUCTOR DE-<br />
VICE, INTERPOSER FOR SEMICON-<br />
DUCTOR DEVICE, AND METHOD OF<br />
MANUFACTURING THEM<br />
PLAQUAGE DESTINE A FORMER UN<br />
ELEMENT INTERCALAIRE DANS UN<br />
DISPOSITIF A SEMI-CONDUCTEUR,<br />
UN TEL ELEMENT INTERCALAIRE,<br />
ET PROCEDE DE FABRICATION AS-<br />
SOCIE<br />
(71) TOYO KOHAN CO., LTD. [JP/JP]; 2-12,<br />
Yonbancho, Chiyoda-ku, Tokyo 102-8447<br />
(JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) SAIJO, Kinji [JP/JP]; Toyo Kohan<br />
Co., Ltd., Technical Research Laboratory,<br />
1296-1, Higashitoyoi, Kudamatsu-shi, Yamaguchi<br />
744-8611 (JP). YOSHIDA, Kazuo<br />
[JP/JP]; Toyo Kohan Co., Ltd., Technical<br />
Research Laboratory, 1296-1, Higashitoyoi,<br />
Kudamatsu-shi, Yamaguchi 744-8611 (JP).<br />
OKAMOTO, Hiroaki [JP/JP]; Toyo Kohan<br />
Co., Ltd., Technical Research Laboratory,<br />
1296-1, Higashitoyoi, Kudamatsu-shi, Yamaguchi<br />
744-8611 (JP). OHSAWA, Shinji<br />
[JP/JP]; Toyo Kohan Co., Ltd., Technical<br />
Research Laboratory, 1296-1, Higashitoyoi,<br />
Kudamatsu-shi, Yamaguchi 744-8611 (JP).<br />
(74) OHTA, Akio; Ohta Patent Office, New<br />
State Manor 356, 23-1, Yoyogi 2-chome,<br />
Shibuya-ku, Tokyo 1<strong>51</strong>-0053 (JP).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY CA CH CN CR CU CZ DE DK DM DZ<br />
EE ES FI GB GD GE GH GM HR HU ID IL<br />
IN IS JP KE KG KP KR KZ LC LK LR LS<br />
LT LU LV MA MD MG MK MN MW MX<br />
MZ NO NZ PL PT RO RU SD SE SG SI SK<br />
SL TJ TM TR TT TZ UA UG US UZ VN YU<br />
ZA ZW.<br />
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />
UG ZW); EA (AM AZ BY KG KZ MD RU<br />
TJ TM); EP (AT BE CH CY DE DK ES FI FR<br />
GB GR IE IT LU MC NL PT SE); OA (BF BJ<br />
CF CG CI CM GA GN GW ML MR NE SN<br />
TD TG).<br />
(<strong>51</strong>) 7 H01L 23/29, 21/56<br />
(11) WO 00/778<strong>51</strong><br />
(21) <strong>PCT</strong>/JP99/07228<br />
(13) A1<br />
(22) 22 Dec/déc 1999 (22.12.1999)<br />
(25) ja (26) ja<br />
(30) 11/168861 15 Jun/juin 1999<br />
(15.06.1999)<br />
JP<br />
(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />
(54) METHOD OF PRODUCING EPOXY<br />
FOR MOLDING SEMICONDUCTOR<br />
DEVICE, MOLDING MATERIAL, AND<br />
SEMICONDUCTOR DEVICE<br />
PROCEDE DE PRODUCTION D’UNE<br />
RESINE EPOXY POUR LE MOULAGE<br />
D’UN DISPOSITIF A SEMI-CONDUC-<br />
TEUR, MATERIAU DE MOULAGE ET<br />
DISPOSITIF A SEMI-CONDUCTEUR<br />
(71) SUMITOMO BAKELITE COMPANY<br />
LIMITED [JP/JP]; 5-8, Higashishinagawa<br />
2-chome, Shinagawa-ku, Tokyo 140-0002<br />
(JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) TAKASAKI, Noriyuki [JP/JP];<br />
4334-14, Shimookamoto, Kawachimachi,<br />
Kawachi-gun, Tochigi 329-1104 (JP).<br />
TAKAYAMA, Kenji [JP/JP]; 25-26, Nakahara<br />
2-chome, Musashimurayama-shi, Tokyo<br />
208-0035 (JP). ANAI, Yoshiyuki [JP/JP];<br />
4673-1, Miyukihoncho, Utsunomiya-shi,<br />
Tochigi 321-0983 (JP).<br />
(74) ASAMURA, Kiyoshi et al. / etc.; Room 331,<br />
New Ohtemachi Building, 2-1, Ohtemachi<br />
2-chome, Chiyoda-ku, Tokyo 100-0004 (JP).<br />
(81) CN JP KR SG US.<br />
(<strong>51</strong>) 7 H01L 23/498, 23/64<br />
(11) WO 00/77852 (13) A1<br />
(21) <strong>PCT</strong>/FR00/01492<br />
(22) 30 May/mai <strong>2000</strong> (30.05.<strong>2000</strong>)<br />
(25) fr (26) fr<br />
(30) 99/07555 15 Jun/juin 1999 FR<br />
(15.06.1999)<br />
(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />
(54) METHOD FOR MAKING DEVICES<br />
COMPRISING A CHIP ASSOCIATED<br />
WITH A CIRCUIT ELEMENT AND<br />
RESULTING DEVICES<br />
PROCEDE DE REALISATION DE DIS-<br />
POSITIFS COMPRENANT UNE PUCE<br />
ASSOCIEE A UN ELEMENT DE CIR-<br />
CUIT ET DISPOSITIFS OBTENUS<br />
(71) GEMPLUS [FR/FR]; Avenue du Pic de<br />
Bertagne, Parc d’Activités de Gémenos,<br />
F-13881 Géménos (FR).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) FIDALGO, Jean-Christophe [FR/FR];<br />
4, rue de la Cortine, F-13420 Gémenos<br />
(FR). CALVAS, Bernard [FR/FR]; 30,<br />
Groupe Provence, Avenue de Verdun,<br />
F-13400 Aubagne (FR). PATRICE, Philippe<br />
[FR/FR]; Résidence Les Deux Moulins,<br />
Bâtiment D, Avenue Jean Roque, F-13190<br />
Allauch (FR).<br />
(74) MILHARO, Emilien; Gemplus, Boîte<br />
postale 100, F-13881 Gémenos Cedex (FR).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY CA CH CN CR CU CZ DE DK DM DZ<br />
EE ES FI GB GD GE GH GM HR HU ID IL<br />
IN IS JP KE KG KP KR KZ LC LK LR LS<br />
LT LU LV MA MD MG MK MN MW MX<br />
MZ NO NZ PL PT RO RU SD SE SG SI SK<br />
SL TJ TM TR TT TZ UA UG US UZ VN YU<br />
ZA ZW.<br />
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />
UG ZW); EA (AM AZ BY KG KZ MD RU<br />
TJ TM); EP (AT BE CH CY DE DK ES FI FR<br />
GB GR IE IT LU MC NL PT SE); OA (BF BJ<br />
CF CG CI CM GA GN GW ML MR NE SN<br />
TD TG).<br />
(<strong>51</strong>) 7 H01L 23/525, 23/532<br />
(11) WO 00/77853<br />
(21) <strong>PCT</strong>/DE00/01897<br />
(13) A1<br />
(22) 9 Jun/juin <strong>2000</strong> (09.06.<strong>2000</strong>)<br />
(25) de (26) de<br />
(30) 199 26 499.6 10 Jun/juin 1999<br />
(10.06.1999)<br />
DE<br />
(43) 21 Dec/déc <strong>2000</strong> (21.12.<strong>2000</strong>)<br />
(54) ARRANGEMENT OF FUSES IN SEMI-<br />
CONDUCTOR STRUCTURES WITH Cu<br />
METALLIZATION<br />
CONFIGURATION DE FUSIBLES<br />
DANS DES STRUCTURES A