i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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The delay td2 in charging the node Q from ground to Vtn using the drain Id1 is given by Equation 6-4. The total thyristor delay td is given by Equation 6-5. td1 t ∫ 0 d2 I d1 = dt = V 3 p tn 6C μ C C 2 1 ox 2 C2Vtn (W/L) Equation 6-4: Delay in charging node Q 2 C 6C C 1Vtp 1 2 td = + 3 Vtn + δt 2 I ctrl μ pC ox (W/L)I ctrl Equation 6-5: Total Thyristor Delay 98
δt is the regeneration time of the CMOS thyristor and is a minor component of the delay value but is sensitive to the variation in the supply voltage. Since the major components of the delay values are insensitive to the supply voltage, the characteristic of this delay element is less sensitive to the variation in the supply voltage. As shown in Equation 6-5, with smaller Ictrl, i.e., larger delay value, the delay element gets less sensitive to the supply voltage variation. Equation 6-5 clearly shows that the delay value is controlled by the control current Ictrl. The second term in the equation shows the temperature dependency of the delay with mobility μp. 6.4 MODIFIED CMOS THYRISTOR DELAY ELEMENT The CMOS thyristor based delay element as suggested by [17] suffers from some drawbacks. The fundamental drawback arises from charge sharing between the nodes. The assumption that node Q~ is at Vdd before being discharged by the current source is not valid. This is because the rising edge of the D input and the signal Penable cause the charge stored on the parasitic capacitance C0 (shown in Figure 6-18) to be shared with capacitances C1 and C2. The charge sharing effect causes the voltage at node Q~ to drop from Vdd to Vdd * (C0/(C0+C1+C2)). This reduction in voltage affects the delay because the node Q~ instead of getting discharged from Vdd , gets discharged from a lower voltage. Thus the charge sharing phenomenon causes a decrease in the delay value. 99
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A PHYSICAL IMPLEMENTATION WITH CUST
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A PHYSICAL IMPLEMENTATION WITH CUST
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4.0 ASIC DESIGN FLOW ..............
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6.5.5 Characterization Results for
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LIST OF TABLES Table 5-1: ALU Modul
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LIST OF FIGURES Figure 1-1: SuperCI
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Figure 5-20: BIGFABRIC Logical Diag
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Figure 7-4: EEPROM Erase Physical O
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ACKNOWLEDGEMENTS “Many, O Jehovah
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1.0 INTRODUCTION Technological adva
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Property) block. The physical desig
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the thesis proposes a power gated m
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2.0 SUPERCISC RECONFIGURABLE HARDWA
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The specifications of the hardware
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INP2 selects from ALU1, ALU2, ALU3
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3.0 POWER ESTIMATION The need for e
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3.1.1 Static Power Consumption Stat
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Internal Power Internal Power is th
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Switching activity Generation Switc
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Figure 3-4: Leakage Power definitio
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The entire array contains informati
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3.3.2 Calculation of Fall Power Fig
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Figure 3-10: Off-state leakage Powe
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Figure 4-1 : Typical ASIC Design Fl
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Figure 4-2: ASIC Physical Design Fl
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4.1.2 Powerplanning Power planning
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created in the design. Routing feed
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4.1.7 Routing Once the standard cel
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Table 5-1: ALU Module Specification
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Table 5-2 shows the important speci
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the basic parameters are specified,
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direction have to be aligned on the
Page 65 and 66: ALU Stripe Pin Assignment The “ib
Page 67 and 68: 5.2.1 MUX Module Specifications As
Page 69 and 70: Figure 5-12: MUX Stripe Logical Dia
Page 71 and 72: MUX initialization routine The MUX
Page 73 and 74: Table 5-10: MUX Stripe Pin Placemen
Page 75 and 76: Figure 5-15: FINALMUX Module Logica
Page 77 and 78: Table 5-12: Final MUX Stripe Specif
Page 79 and 80: pins in the FINALMUX stripe is plac
Page 81 and 82: larger system. Figure 5-22 shows th
Page 83 and 84: Figure 5-20: BIGFABRIC Logical Diag
Page 85 and 86: Figure 5-22: Place and Routed BIGFA
Page 87 and 88: BIGFABRIC Stripe Pin Assignment As
Page 89 and 90: The SPEF file can be generated usin
Page 91 and 92: 5.5.1 Power Results for ADPCM Encod
Page 93 and 94: 5.5.3 Power Results for IDCT Row Be
Page 95 and 96: 5.5.5 Power Results for Sobel Bench
Page 97 and 98: 6.0 DELAY ELEMENTS FOR LOW POWER FA
Page 99 and 100: Transmission gate with Schmitt Trig
Page 101 and 102: PMOS transistors have their gate in
Page 103 and 104: output normally. The signal integri
Page 105 and 106: m-Transistor Cascaded Inverter This
Page 107 and 108: 6.2 LOW POWER FABRIC USING DELAY EL
Page 109 and 110: The use of delay elements in the ha
Page 111 and 112: 6.3.2 Dynamic Triggering Scheme A d
Page 113 and 114: Figure 6-16 shows the shunt current
Page 115: td1 is the delay in discharging nod
Page 119 and 120: transistors, they are active low si
Page 121 and 122: delay elements are enabled on a log
Page 123 and 124: charge sharing happens between the
Page 125 and 126: Figure 6-23: AND gate to generate D
Page 127 and 128: uffer with a drive capacity of 640f
Page 129 and 130: Cell Rise Delay The Cell Rise Delay
Page 131 and 132: Fall Transition Time The time taken
Page 133 and 134: 6.5.6 Characterization Results for
Page 135 and 136: 7.0 EEPROM CIRCUIT DESIGN EEPROM (E
Page 137 and 138: 7.1.1 Erase Operation Figure 7-3: I
Page 139 and 140: 7.1.2 Write Operation Figure 7-6: I
Page 141 and 142: Figure 7-9: IV Characteristics of a
Page 143 and 144: The current source IFN, resistor RT
Page 145 and 146: Figure 7-11: HSPICE Description of
Page 147 and 148: 7.2.1 Ramp Generator The ramp gener
Page 149 and 150: 7.2.4 Column Latch for Bitlines inp
Page 151 and 152: 7.2.5 Power Multiplexer Figure 7-16
Page 153 and 154: The inverter pair connected to the
Page 155 and 156: 7.2.7 Memory Bank Architecture Figu
Page 157 and 158: 7.2.8 Memory Bank Simulation Figure
Page 159 and 160: (Vpp) and a normal voltage (Vdd), t
Page 161 and 162: 8.1.2 Dynamic Decoder The address d
Page 163 and 164: 8.3 POWER-ON RESET One problem with
Page 165 and 166: Figure 8-6 shows the modified charg
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To study the impact of the power co
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9.0 CONCLUSION For this thesis, I h
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definitions, metal layer resistance
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APPENDIX B element standard cell ch
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$k=-1; $j=-1; $i=-1; foreach $ load
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$FALL_START_8 = $OFFSET8 + $ONTIME;
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if ($#rise_power_6 == -1) { # $modi
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$modified_spice_array[$i] = $temp2;
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@fall_power_9 = grep(/fall_power9/,
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print MEASHANDLE $_; print ENERGYHA
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} print MEASHANDLE " "; print ENERG
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set VAL [expr "$NUMBER_OF_MODULES_P
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set DIE_WIDTH_STRIPE [expr {($MODUL
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#*************************PLACING i
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preassignPin stripe $PIN_NAME -loc
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set X_LOC [expr {($X _LOC -( 31*$OU
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#Module related details set NUMBER_
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set X_LOC 0 set Y_LOC 41.2 for {set
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Table D 1 (Continued) 506.232fF 0.0
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121.344fF 0.076ns 0.4634 0.2277 570
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Table D 5 (Continued) 9.48 0. 516 0
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Table D 7: Characterization data fo
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Transi tion Table D 9: Characteriza
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[13] M.F. Aburdene, J. Zheng, and R
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