i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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5.1.3 ALU Stripe Automation Scripts Figure 5-5: Zoomed-in view of Placed and Routed ALU Stripe As placement and routing is an iterative process, automation is essential to meet design deadlines. Also, the amount of manual work involved in designing the complete chip could be large if automation of the design flow was not possible. The scripts were all written in TCL (Tool Command Language). The following scripts were written to automate the ALU Stripe design flow: (i) ALU initialization routine (ii) ALU Floorplanning routine (iii) ALU Module Pin placement (iv) ALU Stripe Pin placement ALU initialization routine The ALU Initialization routine initializes the die width and the die height of the ALU stripe. The “ibm_alu_init.tcl” is used for this purpose. It specifies the core area by specifying the distance between the core and the die on all the four sides. The core area is the actual area where standard cells get placed. The core height has to be a multiple of the standard cell height. Once 42
the basic parameters are specified, the script can be use to initialize the ALU stripe using the “floorplan” command available with Encounter [9]. The routine also adds power rings in the space between the core and the IO of the chip using the “addRing” command [9]. The important parameters used in the script are described in Table 5-3. Table 5-3: ALU Initialization Parameters S.No. ALU Initialization Parameters Description 1 CORE_TO_LEFT Distance between core and IO on left/ right/ top/ CORE_TO_RIGHT CORE_TO_TOP CORE_TO_BOTTOM 2 ALU_LEFT_DISTANCE ALU_RIGHT_DISTANCE bottom sides. Once the die width and height are specified, these values determine the core width and height Each ALU has a certain space to its left and to its right to enable routing of wires. 3 INTER_ALU_DISTANCE_MIN The distance between two ALUs without power stripes between them which is the sum of the ALU_LEFT_DISTANCE and ALU_RIGHT_DISTANCE 4 INTER_ALU_DISTANCE_MAX The distance between two ALUs those have power stripes between them. The value is the sum of ALU_LEFT_DISTANCE, ALU_RIGHT_DISTANCE and 5 POWER_RING_TOTAL_LEFT POWER_RING_TOTAL_RIGHT POWER_STRIPE_TOTAL_WIDTH 6 POWER_STRIPE_WIDTH Width of the power bus The total width of the power ring on the left side. The width of the power ring includes the wdith of the VDD bus, GND bus, spacing between the VDD and GND bus, spacing between the VDD bus and IO and spacing between GND bus and the core 7 POWER_STRIPE_TOTAL_WIDTH Sum of VDD Bus width, GND Bus width and spacing between them 7 POWER_STRIPE_SPACING Spacing between the VDD bus and GND bus 43
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A PHYSICAL IMPLEMENTATION WITH CUST
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A PHYSICAL IMPLEMENTATION WITH CUST
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4.0 ASIC DESIGN FLOW ..............
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6.5.5 Characterization Results for
Page 9 and 10: LIST OF TABLES Table 5-1: ALU Modul
Page 11 and 12: LIST OF FIGURES Figure 1-1: SuperCI
Page 13 and 14: Figure 5-20: BIGFABRIC Logical Diag
Page 15 and 16: Figure 7-4: EEPROM Erase Physical O
Page 17 and 18: ACKNOWLEDGEMENTS “Many, O Jehovah
Page 19 and 20: 1.0 INTRODUCTION Technological adva
Page 21 and 22: Property) block. The physical desig
Page 23 and 24: the thesis proposes a power gated m
Page 25 and 26: 2.0 SUPERCISC RECONFIGURABLE HARDWA
Page 27 and 28: The specifications of the hardware
Page 29 and 30: INP2 selects from ALU1, ALU2, ALU3
Page 31 and 32: 3.0 POWER ESTIMATION The need for e
Page 33 and 34: 3.1.1 Static Power Consumption Stat
Page 35 and 36: Internal Power Internal Power is th
Page 37 and 38: Switching activity Generation Switc
Page 39 and 40: Figure 3-4: Leakage Power definitio
Page 41 and 42: The entire array contains informati
Page 43 and 44: 3.3.2 Calculation of Fall Power Fig
Page 45 and 46: Figure 3-10: Off-state leakage Powe
Page 47 and 48: Figure 4-1 : Typical ASIC Design Fl
Page 49 and 50: Figure 4-2: ASIC Physical Design Fl
Page 51 and 52: 4.1.2 Powerplanning Power planning
Page 53 and 54: created in the design. Routing feed
Page 55 and 56: 4.1.7 Routing Once the standard cel
Page 57 and 58: Table 5-1: ALU Module Specification
Page 59: Table 5-2 shows the important speci
Page 63 and 64: direction have to be aligned on the
Page 65 and 66: ALU Stripe Pin Assignment The “ib
Page 67 and 68: 5.2.1 MUX Module Specifications As
Page 69 and 70: Figure 5-12: MUX Stripe Logical Dia
Page 71 and 72: MUX initialization routine The MUX
Page 73 and 74: Table 5-10: MUX Stripe Pin Placemen
Page 75 and 76: Figure 5-15: FINALMUX Module Logica
Page 77 and 78: Table 5-12: Final MUX Stripe Specif
Page 79 and 80: pins in the FINALMUX stripe is plac
Page 81 and 82: larger system. Figure 5-22 shows th
Page 83 and 84: Figure 5-20: BIGFABRIC Logical Diag
Page 85 and 86: Figure 5-22: Place and Routed BIGFA
Page 87 and 88: BIGFABRIC Stripe Pin Assignment As
Page 89 and 90: The SPEF file can be generated usin
Page 91 and 92: 5.5.1 Power Results for ADPCM Encod
Page 93 and 94: 5.5.3 Power Results for IDCT Row Be
Page 95 and 96: 5.5.5 Power Results for Sobel Bench
Page 97 and 98: 6.0 DELAY ELEMENTS FOR LOW POWER FA
Page 99 and 100: Transmission gate with Schmitt Trig
Page 101 and 102: PMOS transistors have their gate in
Page 103 and 104: output normally. The signal integri
Page 105 and 106: m-Transistor Cascaded Inverter This
Page 107 and 108: 6.2 LOW POWER FABRIC USING DELAY EL
Page 109 and 110: The use of delay elements in the ha
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6.3.2 Dynamic Triggering Scheme A d
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Figure 6-16 shows the shunt current
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td1 is the delay in discharging nod
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δt is the regeneration time of the
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transistors, they are active low si
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delay elements are enabled on a log
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charge sharing happens between the
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Figure 6-23: AND gate to generate D
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uffer with a drive capacity of 640f
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Cell Rise Delay The Cell Rise Delay
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Fall Transition Time The time taken
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6.5.6 Characterization Results for
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7.0 EEPROM CIRCUIT DESIGN EEPROM (E
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7.1.1 Erase Operation Figure 7-3: I
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7.1.2 Write Operation Figure 7-6: I
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Figure 7-9: IV Characteristics of a
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The current source IFN, resistor RT
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Figure 7-11: HSPICE Description of
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7.2.1 Ramp Generator The ramp gener
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7.2.4 Column Latch for Bitlines inp
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7.2.5 Power Multiplexer Figure 7-16
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The inverter pair connected to the
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7.2.7 Memory Bank Architecture Figu
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7.2.8 Memory Bank Simulation Figure
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(Vpp) and a normal voltage (Vdd), t
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8.1.2 Dynamic Decoder The address d
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8.3 POWER-ON RESET One problem with
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Figure 8-6 shows the modified charg
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To study the impact of the power co
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9.0 CONCLUSION For this thesis, I h
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definitions, metal layer resistance
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APPENDIX B element standard cell ch
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$k=-1; $j=-1; $i=-1; foreach $ load
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$FALL_START_8 = $OFFSET8 + $ONTIME;
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if ($#rise_power_6 == -1) { # $modi
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$modified_spice_array[$i] = $temp2;
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@fall_power_9 = grep(/fall_power9/,
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print MEASHANDLE $_; print ENERGYHA
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} print MEASHANDLE " "; print ENERG
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set VAL [expr "$NUMBER_OF_MODULES_P
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set DIE_WIDTH_STRIPE [expr {($MODUL
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#*************************PLACING i
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preassignPin stripe $PIN_NAME -loc
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set X_LOC [expr {($X _LOC -( 31*$OU
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#Module related details set NUMBER_
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set X_LOC 0 set Y_LOC 41.2 for {set
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Table D 1 (Continued) 506.232fF 0.0
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121.344fF 0.076ns 0.4634 0.2277 570
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Table D 5 (Continued) 9.48 0. 516 0
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Table D 7: Characterization data fo
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Transi tion Table D 9: Characteriza
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[13] M.F. Aburdene, J. Zheng, and R
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