i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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The write power consumption dominates the read power consumption because of the high voltage used to program the device. The major power consuming component during a write operation is the high voltage charge pump which generates the voltage required to erase and program the devices [24]. Many circuit level optimizations have been proposed by [24] to keep the charge pump power low during the write operation. Apart from the charge pump, power is consumed in charging and discharging the word lines and the control gate line to Vpp during the erase operation and in charging the bit lines to Vpp during a write operation, where Vpp is the high voltage supplied by the charge pump. During a write operation, the choice of the programming voltage is dominated by the EEPROM process rather than by the designer. Hence, to keep the dynamic power low it becomes necessary to keep the charging capacitance low at a fixed operating frequency. With the increase in size of the memory from 128 bytes to 256 bytes, for example, an architectural decision to increase the number of rows or the number of columns is required. Increasing the number of columns increases the page width, which in turn necessitates an increase in the current required to program the device. This design choice mandates an increase in the size of the charge pump and hence a proportionate increase in power. On the other hand, an increase in the number of rows, increases the bit line capacitance that needs to be charged during a write operation. Hence, scaling the memory while keeping the dynamic power low is a design challenge. Hence, a power gated memory solution enables to expand the memory size with minimal penalty because the expanded memory block is disabled and is enabled only when required. 144
8.3 <strong>POWER</strong>-ON RESET One problem with the power-gating technique occurs in particular when the supply voltage is being ramped up to Vdd. Initially, the power enable lines are low because of the power up delay of the decoder. This effectively allows each of the memory blocks to power up as if they were not power gated, which causes a tremendous amount of power consumption during power up. This is particularly problematic for EEPROMs in passive RFID (Radio Frequency Identification Devices) tags because the power up time for Vdd from RF energy harvesting is long. Figure 8-3 shows the assumptions for our power on condition of the power supply and the power enable input lines. The power supply charges to Vdd linearly in time tP (100us) and the power enable lines are delayed by a time tD (40us) where tD
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A PHYSICAL IMPLEMENTATION WITH CUST
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A PHYSICAL IMPLEMENTATION WITH CUST
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4.0 ASIC DESIGN FLOW ..............
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6.5.5 Characterization Results for
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LIST OF TABLES Table 5-1: ALU Modul
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LIST OF FIGURES Figure 1-1: SuperCI
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Figure 5-20: BIGFABRIC Logical Diag
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Figure 7-4: EEPROM Erase Physical O
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ACKNOWLEDGEMENTS “Many, O Jehovah
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1.0 INTRODUCTION Technological adva
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Property) block. The physical desig
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the thesis proposes a power gated m
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2.0 SUPERCISC RECONFIGURABLE HARDWA
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The specifications of the hardware
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INP2 selects from ALU1, ALU2, ALU3
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3.0 POWER ESTIMATION The need for e
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3.1.1 Static Power Consumption Stat
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Internal Power Internal Power is th
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Switching activity Generation Switc
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Figure 3-4: Leakage Power definitio
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The entire array contains informati
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3.3.2 Calculation of Fall Power Fig
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Figure 3-10: Off-state leakage Powe
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Figure 4-1 : Typical ASIC Design Fl
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Figure 4-2: ASIC Physical Design Fl
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4.1.2 Powerplanning Power planning
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created in the design. Routing feed
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4.1.7 Routing Once the standard cel
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Table 5-1: ALU Module Specification
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Table 5-2 shows the important speci
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the basic parameters are specified,
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direction have to be aligned on the
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ALU Stripe Pin Assignment The “ib
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5.2.1 MUX Module Specifications As
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Figure 5-12: MUX Stripe Logical Dia
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MUX initialization routine The MUX
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Table 5-10: MUX Stripe Pin Placemen
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Figure 5-15: FINALMUX Module Logica
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Table 5-12: Final MUX Stripe Specif
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pins in the FINALMUX stripe is plac
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larger system. Figure 5-22 shows th
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Figure 5-20: BIGFABRIC Logical Diag
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Figure 5-22: Place and Routed BIGFA
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BIGFABRIC Stripe Pin Assignment As
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The SPEF file can be generated usin
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5.5.1 Power Results for ADPCM Encod
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5.5.3 Power Results for IDCT Row Be
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5.5.5 Power Results for Sobel Bench
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6.0 DELAY ELEMENTS FOR LOW POWER FA
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Transmission gate with Schmitt Trig
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PMOS transistors have their gate in
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output normally. The signal integri
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m-Transistor Cascaded Inverter This
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6.2 LOW POWER FABRIC USING DELAY EL
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The use of delay elements in the ha
Page 111 and 112: 6.3.2 Dynamic Triggering Scheme A d
Page 113 and 114: Figure 6-16 shows the shunt current
Page 115 and 116: td1 is the delay in discharging nod
Page 117 and 118: δt is the regeneration time of the
Page 119 and 120: transistors, they are active low si
Page 121 and 122: delay elements are enabled on a log
Page 123 and 124: charge sharing happens between the
Page 125 and 126: Figure 6-23: AND gate to generate D
Page 127 and 128: uffer with a drive capacity of 640f
Page 129 and 130: Cell Rise Delay The Cell Rise Delay
Page 131 and 132: Fall Transition Time The time taken
Page 133 and 134: 6.5.6 Characterization Results for
Page 135 and 136: 7.0 EEPROM CIRCUIT DESIGN EEPROM (E
Page 137 and 138: 7.1.1 Erase Operation Figure 7-3: I
Page 139 and 140: 7.1.2 Write Operation Figure 7-6: I
Page 141 and 142: Figure 7-9: IV Characteristics of a
Page 143 and 144: The current source IFN, resistor RT
Page 145 and 146: Figure 7-11: HSPICE Description of
Page 147 and 148: 7.2.1 Ramp Generator The ramp gener
Page 149 and 150: 7.2.4 Column Latch for Bitlines inp
Page 151 and 152: 7.2.5 Power Multiplexer Figure 7-16
Page 153 and 154: The inverter pair connected to the
Page 155 and 156: 7.2.7 Memory Bank Architecture Figu
Page 157 and 158: 7.2.8 Memory Bank Simulation Figure
Page 159 and 160: (Vpp) and a normal voltage (Vdd), t
Page 161: 8.1.2 Dynamic Decoder The address d
Page 165 and 166: Figure 8-6 shows the modified charg
Page 167 and 168: To study the impact of the power co
Page 169 and 170: 9.0 CONCLUSION For this thesis, I h
Page 171 and 172: definitions, metal layer resistance
Page 173 and 174: APPENDIX B element standard cell ch
Page 175 and 176: $k=-1; $j=-1; $i=-1; foreach $ load
Page 177 and 178: $FALL_START_8 = $OFFSET8 + $ONTIME;
Page 179 and 180: if ($#rise_power_6 == -1) { # $modi
Page 181 and 182: $modified_spice_array[$i] = $temp2;
Page 183 and 184: @fall_power_9 = grep(/fall_power9/,
Page 185 and 186: print MEASHANDLE $_; print ENERGYHA
Page 187 and 188: } print MEASHANDLE " "; print ENERG
Page 189 and 190: set VAL [expr "$NUMBER_OF_MODULES_P
Page 191 and 192: set DIE_WIDTH_STRIPE [expr {($MODUL
Page 193 and 194: #*************************PLACING i
Page 195 and 196: preassignPin stripe $PIN_NAME -loc
Page 197 and 198: set X_LOC [expr {($X _LOC -( 31*$OU
Page 199 and 200: #Module related details set NUMBER_
Page 201 and 202: set X_LOC 0 set Y_LOC 41.2 for {set
Page 203 and 204: Table D 1 (Continued) 506.232fF 0.0
Page 205 and 206: 121.344fF 0.076ns 0.4634 0.2277 570
Page 207 and 208: Table D 5 (Continued) 9.48 0. 516 0
Page 209 and 210: Table D 7: Characterization data fo
Page 211 and 212: Transi tion Table D 9: Characteriza
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[13] M.F. Aburdene, J. Zheng, and R
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