i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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3.2.2 Calculation of Static Power Dissipated using Prime Power Prime Power computes the total leakage power of the design as the sum of the leakage power of the design’s library cells [4] as shown in equation Equation 3-2. P total_leakage = ∑ ∀i P(i) cell_leakage Equation 3-2: Leakage Power Estimation using Prime Power Ptotal_leakage = Total leakage power dissipation of the design Pcell_leakage(i) = Leakage power dissipation of each cell “i” The standard cells in a standard cell library contain the approximate total leakage power dissipated by each cell. Leakage power models can be defined at the library level or at cell level. The models can be state dependent or independent and can be defined to be a single value or can be modeled using a polynomial equation. Figure 3-4 below shows the leakage power definition of a NAND cell. The “leakage_power_unit” attribute is common to the entire library of standard cells, while the “cell_leakage_power” attribute is defined for each standard cell. Figure 3-4 shows a state dependent leakage power definition. The cell leakage power is defined as the maximum value in the state dependent leakage declaration. Depending on the analysis done by the tool, either the “cell_leakage_power” value can be used or the state dependent leakage values can be used. The “default_cell_leakage_power” attribute defined in the standard cell library is a value used by the power analysis tool for standard cells that do not have a leakage power definition. 20
Figure 3-4: Leakage Power definition of a NAND Standard Cell 3.2.3 Calculation of Dynamic Power Dissipated using Prime Power Dynamic power dissipated by a CMOS circuit is the sum of switching power and internal power [5]. While performing an event based power analysis, PrimePower uses the switching information available in the VCD file to note the nets that switch. The tool then sets the ramp-up times of the input ports and calculates the propagation of the ramp based on the capacitance annotation. Using the internal power table, the tool then estimates the switching power consumed by the device [5]. Calculation of Switching Power Prime Power calculates the total switching energy by summing the switching energy associated with every rise transition [5]. Prime Power makes an assumption that switching energy is consumed only when the capacitance gets charged (rise transition) [5]. The total switching power is the total switching energy divided by the simulation time as shown in 21
Page 1 and 2: A PHYSICAL IMPLEMENTATION WITH CUST
Page 3 and 4: A PHYSICAL IMPLEMENTATION WITH CUST
Page 5 and 6: 4.0 ASIC DESIGN FLOW ..............
Page 7 and 8: 6.5.5 Characterization Results for
Page 9 and 10: LIST OF TABLES Table 5-1: ALU Modul
Page 11 and 12: LIST OF FIGURES Figure 1-1: SuperCI
Page 13 and 14: Figure 5-20: BIGFABRIC Logical Diag
Page 15 and 16: Figure 7-4: EEPROM Erase Physical O
Page 17 and 18: ACKNOWLEDGEMENTS “Many, O Jehovah
Page 19 and 20: 1.0 INTRODUCTION Technological adva
Page 21 and 22: Property) block. The physical desig
Page 23 and 24: the thesis proposes a power gated m
Page 25 and 26: 2.0 SUPERCISC RECONFIGURABLE HARDWA
Page 27 and 28: The specifications of the hardware
Page 29 and 30: INP2 selects from ALU1, ALU2, ALU3
Page 31 and 32: 3.0 POWER ESTIMATION The need for e
Page 33 and 34: 3.1.1 Static Power Consumption Stat
Page 35 and 36: Internal Power Internal Power is th
Page 37: Switching activity Generation Switc
Page 41 and 42: The entire array contains informati
Page 43 and 44: 3.3.2 Calculation of Fall Power Fig
Page 45 and 46: Figure 3-10: Off-state leakage Powe
Page 47 and 48: Figure 4-1 : Typical ASIC Design Fl
Page 49 and 50: Figure 4-2: ASIC Physical Design Fl
Page 51 and 52: 4.1.2 Powerplanning Power planning
Page 53 and 54: created in the design. Routing feed
Page 55 and 56: 4.1.7 Routing Once the standard cel
Page 57 and 58: Table 5-1: ALU Module Specification
Page 59 and 60: Table 5-2 shows the important speci
Page 61 and 62: the basic parameters are specified,
Page 63 and 64: direction have to be aligned on the
Page 65 and 66: ALU Stripe Pin Assignment The “ib
Page 67 and 68: 5.2.1 MUX Module Specifications As
Page 69 and 70: Figure 5-12: MUX Stripe Logical Dia
Page 71 and 72: MUX initialization routine The MUX
Page 73 and 74: Table 5-10: MUX Stripe Pin Placemen
Page 75 and 76: Figure 5-15: FINALMUX Module Logica
Page 77 and 78: Table 5-12: Final MUX Stripe Specif
Page 79 and 80: pins in the FINALMUX stripe is plac
Page 81 and 82: larger system. Figure 5-22 shows th
Page 83 and 84: Figure 5-20: BIGFABRIC Logical Diag
Page 85 and 86: Figure 5-22: Place and Routed BIGFA
Page 87 and 88: BIGFABRIC Stripe Pin Assignment As
Page 89 and 90:
The SPEF file can be generated usin
Page 91 and 92:
5.5.1 Power Results for ADPCM Encod
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5.5.3 Power Results for IDCT Row Be
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5.5.5 Power Results for Sobel Bench
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6.0 DELAY ELEMENTS FOR LOW POWER FA
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Transmission gate with Schmitt Trig
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PMOS transistors have their gate in
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output normally. The signal integri
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m-Transistor Cascaded Inverter This
Page 107 and 108:
6.2 LOW POWER FABRIC USING DELAY EL
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The use of delay elements in the ha
Page 111 and 112:
6.3.2 Dynamic Triggering Scheme A d
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Figure 6-16 shows the shunt current
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td1 is the delay in discharging nod
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δt is the regeneration time of the
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transistors, they are active low si
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delay elements are enabled on a log
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charge sharing happens between the
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Figure 6-23: AND gate to generate D
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uffer with a drive capacity of 640f
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Cell Rise Delay The Cell Rise Delay
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Fall Transition Time The time taken
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6.5.6 Characterization Results for
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7.0 EEPROM CIRCUIT DESIGN EEPROM (E
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7.1.1 Erase Operation Figure 7-3: I
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7.1.2 Write Operation Figure 7-6: I
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Figure 7-9: IV Characteristics of a
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The current source IFN, resistor RT
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Figure 7-11: HSPICE Description of
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7.2.1 Ramp Generator The ramp gener
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7.2.4 Column Latch for Bitlines inp
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7.2.5 Power Multiplexer Figure 7-16
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The inverter pair connected to the
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7.2.7 Memory Bank Architecture Figu
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7.2.8 Memory Bank Simulation Figure
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(Vpp) and a normal voltage (Vdd), t
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8.1.2 Dynamic Decoder The address d
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8.3 POWER-ON RESET One problem with
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Figure 8-6 shows the modified charg
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To study the impact of the power co
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9.0 CONCLUSION For this thesis, I h
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definitions, metal layer resistance
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APPENDIX B element standard cell ch
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$k=-1; $j=-1; $i=-1; foreach $ load
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$FALL_START_8 = $OFFSET8 + $ONTIME;
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if ($#rise_power_6 == -1) { # $modi
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$modified_spice_array[$i] = $temp2;
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@fall_power_9 = grep(/fall_power9/,
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print MEASHANDLE $_; print ENERGYHA
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} print MEASHANDLE " "; print ENERG
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set VAL [expr "$NUMBER_OF_MODULES_P
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set DIE_WIDTH_STRIPE [expr {($MODUL
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#*************************PLACING i
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preassignPin stripe $PIN_NAME -loc
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set X_LOC [expr {($X _LOC -( 31*$OU
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#Module related details set NUMBER_
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set X_LOC 0 set Y_LOC 41.2 for {set
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Table D 1 (Continued) 506.232fF 0.0
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121.344fF 0.076ns 0.4634 0.2277 570
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Table D 5 (Continued) 9.48 0. 516 0
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Table D 7: Characterization data fo
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Transi tion Table D 9: Characteriza
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[13] M.F. Aburdene, J. Zheng, and R
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i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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