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i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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Internal Power<br />

Internal Power is the power dissipated by the cell because of the charging and<br />

discharging of the nodes internal to the cell. In addition to that, short-circuit current that results<br />

when both the PMOS and NMOS transistors are ON (as in the case of an inverter) dissipates<br />

short-circuit power. This power is also accounted in the internal power consumption. Short-<br />

circuit power is a function of the input transition time. For slow transition times, the short circuit<br />

power is high as compared with fast transition times because the NMOS and PMOS transistors<br />

are simultaneously ON for a longer duration of time. Short circuit power is also influenced by<br />

the sizes of the transistors.<br />

3.2 PRIME<strong>POWER</strong> <strong>POWER</strong> ESTIMATION F<strong>LOW</strong><br />

Prime power is gate-level power analysis tool for analyzing the power dissipation of standard-<br />

cell based designs [5]. Prime power supports event-based and statistical activity based power<br />

analysis at the gate level.<br />

Event based power analysis uses event driven simulation to calculate the power<br />

consumed at every event. Event based power analysis is actually dependent on the input vector<br />

and when averaged over a large number of input vectors can give a very accurate estimate of the<br />

power consumed by the chip.<br />

Statistical Activity based power analysis uses a probabilistic and statistical estimation<br />

algorithm to calculate the average power. It is mostly vector free or has weak vector dependence<br />

[5].<br />

17

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