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i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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δt is the regeneration time of the CMOS thyristor and is a minor component of the delay<br />

value but is sensitive to the variation in the supply voltage. Since the major components of the<br />

delay values are insensitive to the supply voltage, the characteristic of this delay element is less<br />

sensitive to the variation in the supply voltage.<br />

As shown in Equation 6-5, with smaller Ictrl, i.e., larger delay value, the delay element<br />

gets less sensitive to the supply voltage variation. Equation 6-5 clearly shows that the delay<br />

value is controlled by the control current Ictrl. The second term in the equation shows the<br />

temperature dependency of the delay with mobility μp.<br />

6.4 MODIFIED CMOS THYRISTOR DELAY ELEMENT<br />

The CMOS thyristor based delay element as suggested by [17] suffers from some drawbacks.<br />

The fundamental drawback arises from charge sharing between the nodes. The assumption that<br />

node Q~ is at Vdd before being discharged by the current source is not valid. This is because the<br />

rising edge of the D input and the signal Penable cause the charge stored on the parasitic<br />

capacitance C0 (shown in Figure 6-18) to be shared with capacitances C1 and C2. The charge<br />

sharing effect causes the voltage at node Q~ to drop from Vdd to Vdd * (C0/(C0+C1+C2)). This<br />

reduction in voltage affects the delay because the node Q~ instead of getting discharged from<br />

Vdd , gets discharged from a lower voltage. Thus the charge sharing phenomenon causes a<br />

decrease in the delay value.<br />

99

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