i A PHYSICAL IMPLEMENTATION WITH CUSTOM LOW POWER ...

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Read Power Erase Power Write Power 8.4 RESULTS For our fundamental memory building block, we used the model of a 64 byte EEPROM memory built in a 0.35 um CMOS process operating at 5.0V. Table 8-1 shows the power-gated memory power simulation results. The table compares the power consumed by the active memory bank and the power-gated memory banks in a power-gated design. The address decoder overhead is also shown in the table. The total read power overhead is 298.12nW for a 2-bank memory, 390.71nW for a 4-bank memory and 570.7nW for an 8-bank memory. The total write power overhead is 143.55nW for a 2-bank memory, 203.69nW for a 4-bank memory and 339.67nW for an 8-bank memory. Active Bank 2 Bank Table 8-1: Power Gated Memory Simulation Results 4 Bank (Bank Size 64 Bytes) (Bank Size 64 Bytes) Idle Bank (nW) Decoder Overhead (nW) Active Bank Idle Banks (nW) Decoder Overhead (nW) Active Bank 8 Bank (Bank Size 64 bytes) Idle Banks (nW) Decoder Overhead (nW) 700.68uW 9.77 288.35 700.68uW 29.30 361.41 700.68uW 68.37 502.33 12.51uW 4.03 135.53 12.51uW 12.09 179.62 12.51uW 28.22 283.49 10.08mW 3.99 10.08mW 11.98 10.08mW 27.96 148
To study the impact of the power consumed during the power-on condition, an inverter with an approximated load capacitance CL of 4.44 pF was used. Any device that allows switching could be used to model the dynamic power of the device; however, the inverter was selected due to its simplified modeling. To this device the power enable PMOS device was added in series. The circuit diagram is shown in Figure 8-7. Figure 8-7: Inverter with power gate. The pow er-up time a nd in particular the delay has a significant impact on the power consumed by the memory. For example, with a power up time, tP = 100 us and an ideal ramp up of the power enable inputs, t = 0, the average power consumption is approximately 25.5 nW. D However, as the power enable delay increases linearly, the power consumption increases exp onentially to reach 25.4 uW f or tD = 40 us based on the simulations as indicated in Figure 8-3. tD was varied between 26us and 40us to study the peak currents in more detail. The results are shown in Figure 8-8. For delays exceeding 30 us, there are big spikes initially in supply 149
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A PHYSICAL IMPLEMENTATION WITH CUST
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A PHYSICAL IMPLEMENTATION WITH CUST
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4.0 ASIC DESIGN FLOW ..............
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6.5.5 Characterization Results for
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LIST OF TABLES Table 5-1: ALU Modul
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LIST OF FIGURES Figure 1-1: SuperCI
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Figure 5-20: BIGFABRIC Logical Diag
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Figure 7-4: EEPROM Erase Physical O
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ACKNOWLEDGEMENTS “Many, O Jehovah
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1.0 INTRODUCTION Technological adva
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Property) block. The physical desig
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the thesis proposes a power gated m
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2.0 SUPERCISC RECONFIGURABLE HARDWA
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The specifications of the hardware
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INP2 selects from ALU1, ALU2, ALU3
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3.0 POWER ESTIMATION The need for e
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3.1.1 Static Power Consumption Stat
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Internal Power Internal Power is th
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Switching activity Generation Switc
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Figure 3-4: Leakage Power definitio
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The entire array contains informati
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3.3.2 Calculation of Fall Power Fig
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Figure 3-10: Off-state leakage Powe
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Figure 4-1 : Typical ASIC Design Fl
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Figure 4-2: ASIC Physical Design Fl
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4.1.2 Powerplanning Power planning
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created in the design. Routing feed
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4.1.7 Routing Once the standard cel
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Table 5-1: ALU Module Specification
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Table 5-2 shows the important speci
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the basic parameters are specified,
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direction have to be aligned on the
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ALU Stripe Pin Assignment The “ib
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5.2.1 MUX Module Specifications As
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Figure 5-12: MUX Stripe Logical Dia
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MUX initialization routine The MUX
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Table 5-10: MUX Stripe Pin Placemen
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Figure 5-15: FINALMUX Module Logica
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Table 5-12: Final MUX Stripe Specif
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pins in the FINALMUX stripe is plac
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larger system. Figure 5-22 shows th
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Figure 5-20: BIGFABRIC Logical Diag
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Figure 5-22: Place and Routed BIGFA
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BIGFABRIC Stripe Pin Assignment As
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The SPEF file can be generated usin
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5.5.1 Power Results for ADPCM Encod
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5.5.3 Power Results for IDCT Row Be
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5.5.5 Power Results for Sobel Bench
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6.0 DELAY ELEMENTS FOR LOW POWER FA
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Transmission gate with Schmitt Trig
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PMOS transistors have their gate in
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output normally. The signal integri
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m-Transistor Cascaded Inverter This
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6.2 LOW POWER FABRIC USING DELAY EL
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The use of delay elements in the ha
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6.3.2 Dynamic Triggering Scheme A d
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Figure 6-16 shows the shunt current
Page 115 and 116: td1 is the delay in discharging nod
Page 117 and 118: δt is the regeneration time of the
Page 119 and 120: transistors, they are active low si
Page 121 and 122: delay elements are enabled on a log
Page 123 and 124: charge sharing happens between the
Page 125 and 126: Figure 6-23: AND gate to generate D
Page 127 and 128: uffer with a drive capacity of 640f
Page 129 and 130: Cell Rise Delay The Cell Rise Delay
Page 131 and 132: Fall Transition Time The time taken
Page 133 and 134: 6.5.6 Characterization Results for
Page 135 and 136: 7.0 EEPROM CIRCUIT DESIGN EEPROM (E
Page 137 and 138: 7.1.1 Erase Operation Figure 7-3: I
Page 139 and 140: 7.1.2 Write Operation Figure 7-6: I
Page 141 and 142: Figure 7-9: IV Characteristics of a
Page 143 and 144: The current source IFN, resistor RT
Page 145 and 146: Figure 7-11: HSPICE Description of
Page 147 and 148: 7.2.1 Ramp Generator The ramp gener
Page 149 and 150: 7.2.4 Column Latch for Bitlines inp
Page 151 and 152: 7.2.5 Power Multiplexer Figure 7-16
Page 153 and 154: The inverter pair connected to the
Page 155 and 156: 7.2.7 Memory Bank Architecture Figu
Page 157 and 158: 7.2.8 Memory Bank Simulation Figure
Page 159 and 160: (Vpp) and a normal voltage (Vdd), t
Page 161 and 162: 8.1.2 Dynamic Decoder The address d
Page 163 and 164: 8.3 POWER-ON RESET One problem with
Page 165: Figure 8-6 shows the modified charg
Page 169 and 170: 9.0 CONCLUSION For this thesis, I h
Page 171 and 172: definitions, metal layer resistance
Page 173 and 174: APPENDIX B element standard cell ch
Page 175 and 176: $k=-1; $j=-1; $i=-1; foreach $ load
Page 177 and 178: $FALL_START_8 = $OFFSET8 + $ONTIME;
Page 179 and 180: if ($#rise_power_6 == -1) { # $modi
Page 181 and 182: $modified_spice_array[$i] = $temp2;
Page 183 and 184: @fall_power_9 = grep(/fall_power9/,
Page 185 and 186: print MEASHANDLE $_; print ENERGYHA
Page 187 and 188: } print MEASHANDLE " "; print ENERG
Page 189 and 190: set VAL [expr "$NUMBER_OF_MODULES_P
Page 191 and 192: set DIE_WIDTH_STRIPE [expr {($MODUL
Page 193 and 194: #*************************PLACING i
Page 195 and 196: preassignPin stripe $PIN_NAME -loc
Page 197 and 198: set X_LOC [expr {($X _LOC -( 31*$OU
Page 199 and 200: #Module related details set NUMBER_
Page 201 and 202: set X_LOC 0 set Y_LOC 41.2 for {set
Page 203 and 204: Table D 1 (Continued) 506.232fF 0.0
Page 205 and 206: 121.344fF 0.076ns 0.4634 0.2277 570
Page 207 and 208: Table D 5 (Continued) 9.48 0. 516 0
Page 209 and 210: Table D 7: Characterization data fo
Page 211 and 212: Transi tion Table D 9: Characteriza
Page 213 and 214: [13] M.F. Aburdene, J. Zheng, and R
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