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1996 Electronics Industry Environmental Roadmap - Civil and ...

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Appendix A<br />

Integrated Circuit Fabrication<br />

SIA/SEMATECH IC capability will grow rapidly over the next several decades, from<br />

today’s 64M DRAMS to 64G DRAMS by 2010.<br />

The number of transistors per chip for microprocessors will likely<br />

increase from today’s 4M to as much as 90M by 2010. For ASIC, the<br />

number of transistors will increase from 2M to 40M<br />

Processing speeds will likely increase from 150 MHz today to over 600<br />

MHz by 2010<br />

Moore’s law will likely hold true through 2010;<br />

IC manufacturing costs will continue to increase<br />

CMOS technology will continue to be the dominant high-volume high<br />

performance technology throughout the foreseeable future.<br />

Chip size will continue to increase, as will the number of wiring levels.<br />

Mask count will grow from 18 today to 24 in 2010<br />

Substrate diameter will grow from 200mm today to 400mm by 2010<br />

With each generation of logic products <strong>and</strong> microprocessors, the<br />

capability to fabricate more devices in silicon exceeds the ability to<br />

wire them. This results in a dramatic increase in the number of metal<br />

levels.<br />

NEMI Even though IC feature sizes will continue to shrink, the dem<strong>and</strong>s for<br />

increased functionality will cause overall chip size to increase.<br />

IPC<br />

OIDA<br />

Packaging<br />

123

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