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Introduction to Nanotechnology

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6.1. SOLID DISORDERED NANOSTRUCTURES 147<br />

density of states is assumed constant over an energy-range eV (electron volt), then<br />

for small V and low 7: we obtain<br />

which can be rewritten in the form<br />

where<br />

I = f=, (E,)N,(E,)eV (6.5)<br />

I = G,,V (6.6)<br />

and G,, is identified as the conductance. The junction, in effect, behaves in an ohmic<br />

manner, that is, with the current proportional <strong>to</strong> the voltage.<br />

6.1.6. Other Properties<br />

While the emphasis of the previous discussion has been on the effect of nanosized<br />

microstructure on mechanical and electrical properties, many other properties of<br />

bulk nanostructured materials are also affected. For example, the magnetic behavior<br />

of bulk ferromagnetic material made of nanosized grains is quite different from the<br />

same material made with conventional grain sizes. Because of its technological<br />

importance relating <strong>to</strong> the possibility of enhancing magnetic information s<strong>to</strong>rage<br />

capability, this is discussed in more detail in Chapter 7.<br />

In Chapter 4 we saw that the inherent reactivity of nanoparticles depends on the<br />

number of a<strong>to</strong>ms in the cluster. It might be expected that such behavior would also<br />

be manifested in bulk materials made of nanostructured grains, providing a possible<br />

way <strong>to</strong> protect against corrosion and the detrimental effects of oxidation, such as the<br />

formation of the black silver oxide coating on silver. Indeed, there have been<br />

some advances in this area. The nanostructured alloy Fe73B13Si9 has been found <strong>to</strong><br />

have enhanced resistance <strong>to</strong> oxidation at temperatures between 200 and 400°C. The<br />

material consists of a mixture 30-nm particles of Fe(Si) and Fe2B. The enhanced<br />

resistance is attributed <strong>to</strong> the large number of interface boundaries, and the fact that<br />

a<strong>to</strong>m diffusion occurs faster in nanostructured materials at high temperatures. In this<br />

material the Si a<strong>to</strong>ms in the FeSi phase segregate <strong>to</strong> interface boundaries where they<br />

can then diffuse <strong>to</strong> the surface of the sample. At the surface the Si interacts with the<br />

oxygen in the air <strong>to</strong> form a protective layer of SO2, which hinders further oxidation.<br />

The melting temperature of nanostructured materials is also affected by grain<br />

size. It has been shown that indium containing 4-nm nanoparticles has its melting<br />

temperature lowered by 1 10 K.<br />

In the superconducting phase there is a maximum current that a material can<br />

carry called the critical current IC. When the current I exceeds that value, the<br />

superconducting state is removed, and the material returns <strong>to</strong> its normal resistance. It

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