Introduction to Nanotechnology

TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES 367
Table 8.12. Index of refraction n [optical region, n = (E/E,,)’/~] for types
llLV and lLVl semiconductors a
~
P As Sb S Se Te
AI - - 3.2 Zn 2.36 2.89 3.56
Ga
In
3.2
3.1
3.30
3.5
3.8
3.96
Cd
Hg
- - 2.50
2.85 -
“The values for Si and Ge are 3.49 and 3.99, respectively.
Source: Data from Handbook of Chemistty and Physics, CRC Press, Boca Raton, FL,
2002, p. 12-101.
Table 8.13. Melting point (in kelvins) for types llLV and lLVl semiconductors a
P As Sb S Se Te
~ ~ ~~ ~ ~
A1 -2100 2013 1330 Zn 2100 1790 1568
Ga 1750 1510 980 Cd 1750 1512 1365
In 1330 1215 798 Hg 1820 1070 943
”The values for Si and Ge are 1685 and 1231 K, respectively.
Source: Data from Handbook ojChemis0 and Physics, CRC Press, Boca Raton, FL, 2002, pp.
12-97, 12-98.
Table 8.14. Heats of formation (in kJ/rnol) at 300 K for types llLV
and lLVl semiconductors a
P As Sb S Se Te
AI - 62 7 585 Zn 477 422 376
Ga 635 535 493 Cd - - 339
In 560 477 447 Hg - 247 242
”The values for Si and Ge are 324 and 291 kJ/mol, respectively.
Source: Data from Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL,
2002, p. 12-101.
Table 8.15. The Debye temperature OD (in kelvins) for types llLV
and lLVl semiconductors a
P As Sb S Se Te
\
A1 588 417 292 Zn 530 400 223
Ga 446 344 265 Cd 219 181 200
In 32 1 249 202 Hg - 151 242
“The values for Si and Ge are 645 and 374 K, respectively.
Source: Data from Handbook ojChemistry and Physics, CRC Press, Boca Raton, FL,
2002, pp. 12-97, 12-98.