Introduction to Nanotechnology

368 TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.16. The specific heat C, [in J/(kg.K)] at 300 K for type
Ill-V semiconductorsa
P A Sb S Se Te
AI - - -
-
Zn 472 339 264
Ga - 320 Cd 330 255 205
In - 268 144 Hg 210 178 164
"The values for Si and Ge are 702 and 322 J/(kg. K), respectively.
Source: Data from Handbook of Chemistty and Physics, CRC Press, Boca Raton,
FL, 2002, pp. 12-98.
Table 8.17. Thermal conductivity [in mW/(cm.K)] at 300 K for types
Ill4 and lLVl semiconductors a
P As Sb S Se Te
A1 920 840 600 Zn 25 1 140 108
Ga 752 560 270 Cd 200 90 59
In 800 290 160 Hg - 10 20
"The values for Si and Ge are 1240 and 640 mW/(cm.K), respectively.
Source: Data from Handbook of Chemisby and Physics, CRC Press, Boca Raton, FL,
2002, pp. 12-97, 12-98.
Table B.18. Linear thermal expansion coefficient (in 10-6K-1) at
300 K for type Ill-V semiconductors a
P As Sb S Se Te
A1 - 3.5 4.2 Zn 6.4 7.2 8.2
Ga 5.3 5.4 6.1 Cd 4.7 3.8 4.9
In 4.6 4.7 4.7 Hg - 5.5 4.6
"The values for Si and Ge are 2.49 x
and 6.1 x 10-6K-', respectively.
Source: Data from Hundbook ofchemistty and Physics, CRC Press, Boca Raton,
FL, 2002, p. 12-98.
Table B.19. Volume compressibility (in lo-'' m2/N)
for type Ill-V semiconductors a
P As Sb
A1 - -
0.571
Ga 0.1 10 0.77 1 0.457
In 0.735 0.549 0.442
"The values for Si and Ge are 0.306 and 0.768 x 10-"m2/N,
respectively.
Source: Data from Handbook of Chernistiy and Physics, CRC
Press, Boca Raton, FL, 2002, p. 12-101.