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Introduction to Nanotechnology

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260 SELF-ASSEMBLY AND CATALYSIS<br />

the strain builds up as several additional layers are added. Eventually, beyond a<br />

transition region the strain subsides, and thick films are only strained in the transition<br />

region near the substrate. This mismatch complicates the free-energy discussion<br />

following Eq. (10.2), and favors the growth of three-dimensional islands <strong>to</strong><br />

compensate for the strain and thereby minimize the free energy. This is called the<br />

Stranski-Krastanov growth mode. A common occurrence in this mode is the initial<br />

formation of a monolayer that accommodates the strain, and acquires a critical<br />

thickness. The next stage is the aggregation of three-dimensional islands on the twodimensional<br />

monolayer. Another eventuality is the coverage of the surface with<br />

monolayer islands of a preferred size <strong>to</strong> better accommodate the lattice mismatch<br />

strain. This can be followed by adding further layers <strong>to</strong> these islands. A<br />

typical size of such a monolayer island is perhaps 5 nm, and it might contain 12 unit<br />

cells.<br />

In addition <strong>to</strong> the three free energies included in Eq. (10.2), the formation and<br />

growth of monolayer islands involves the free energies of the strain due <strong>to</strong> the lattice<br />

mismatch, the free energy associated with the edges of a monolayer island and the<br />

free energy for the growth of a three-dimensional island on a monolayer, A great<br />

deal of experimental work has been done studying the adsorption of a<strong>to</strong>ms on<br />

substrates for gradually increasing coverage from zero <strong>to</strong> several monolayers thick.<br />

The scanning tunneling microscope images presented in Fig. 10.1 show the<br />

successive growth of islands of InAs on a GaAs (001) substrate for several fractional<br />

monolayer coverages. We see from the data in Table B.l that the lattice constant<br />

a = 0.606~1 for InAs and a = 0.565nm for GaAs, corresponding <strong>to</strong> a lattice<br />

mismatchf = 7.0% from Eq. (10.3), which is quite large.<br />

10.1.3. Monolayers<br />

A model system that well illustrates the principles and advantages of the self-<br />

assembly process is a self-assembled monolayer (Wilber and Whitesides 1999). The<br />

Langmuir-Blodgett technique, which his<strong>to</strong>rically preceded the self-assembled<br />

approach, had been widely used in the past for the preparation and study of optical<br />

coatings, biosensors, ligand-stabilized AuSS clusters, antibodies, and enzymes. It<br />

involves starting with clusters, forming them in<strong>to</strong> a monolayer at an air-water<br />

interface, and then transferring the monolayer <strong>to</strong> a substrate in the form of what is<br />

called a Langmuir-Blodgettjlm. These films are difficult <strong>to</strong> prepare, however, and<br />

are not sufficiently rugged for most purposes. Self-assembled monolayers, on the<br />

other hand are stronger, are easier <strong>to</strong> make, and make use of a wider variety of<br />

available starting materials.<br />

Self-assembled monolayers and multilayers have been prepared on various<br />

metallic and inorganic substrates such as Ag, Au, Cu, Ge, Pt, Si, GaAs, SiOz,<br />

and other materials. This has been done with the aid of bonding molecules or ligands<br />

such as alkanethiols RSH, sulfides RSR’, disulfides RSSR’, acids RCOOH, and<br />

siloxanes RSiOR3, where the symbols R and R’ designate organic molecule groups<br />

that bond <strong>to</strong>, for example, a thiol radical -SH or an acid radical -COOH. The<br />

binding <strong>to</strong> the surface for the thiols, sulfides, and disulfides is via the sulfur a<strong>to</strong>m;

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