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Introduction to Nanotechnology

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184 NANOSTRUCTURED FERROMAGNETISM<br />

20<br />

0<br />

s<br />

-<br />

Q 10<br />

5<br />

'0 2 4 6 8 10 12 14 16 18 20<br />

MAGNETIC FIELD (KOe)<br />

Figure 7.18. Dependence of the change of magne<strong>to</strong>resistance AR versus the applied magnetic<br />

field for a thin film of Co nanoparticles in a copper matrix. A kilooersted corresponds <strong>to</strong> 0.1 T<br />

[Adapted from A. E. Berkowitz, fhys. Rev. Lett. 68, 3745 (1992).]<br />

consisting of Co nanoparticles in a copper matrix. Hybrid systems consisting of<br />

nanoparticles in metal matrices sandwiched between metal magnetic layers, as<br />

illustrated schematically in Fig. 7.15c, have also been developed and exhibit similar<br />

magne<strong>to</strong>resistance properties.<br />

Materials have been discovered having larger magne<strong>to</strong>resistive effects than the<br />

layered materials, and this phenomenon in them is called colossal magne<strong>to</strong>resistance<br />

(CMR). These materials also have a number of application possibilities, such as in<br />

magnetic recording heads, or as sensing elements in magne<strong>to</strong>meters. The perovskite-<br />

like material LaMnO, has manganese in the Mn3+ valence state. If the La3+ is<br />

partially replaced with ions having a valence of 2+, such as Ca, Ba, Sr, Pb, or Cd,<br />

some Mn3+ ions transform <strong>to</strong> Mn4t <strong>to</strong> preserve the electrical neutrality. The result is<br />

a mixed valence system of Mn3+/Mn4+, with the presence of many mobile charge<br />

carriers. This mixed valence system has been shown <strong>to</strong> exhibit very large magne<strong>to</strong>-<br />

resistive effects. The unit cell of the crystal is sketched in Fig. 7.19. The particular<br />

system La,..,,Ca,,33Mn0, displays more than a thousandfold change in resistance<br />

with the application of a 6-T DC magnetic field. Figure 7.20 shows how the<br />

normalized resistance, called the re.szstivi@ (normalized magne<strong>to</strong>resistance) of a thin<br />

film of the material exhibits a pronounced decrease with increasing values of the DC<br />

magnetic field. The temperature dependence of the resistivity also displays the<br />

unusual behavior shown in Fig. 7.21 as the temperature is lowered through the<br />

Curie point. Although the effect of nanostructuring on these materials has not been<br />

extensively studied, it is expected <strong>to</strong> have a pronounced influence on the magnitude<br />

of the magne<strong>to</strong>resistive effect.

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