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Introduction to Nanotechnology

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64 METHODS OF MEASURING PROPERTIES<br />

1.6 1<br />

1<br />

~~ ~~<br />

2 3 4 5 6 7 8<br />

Radius (nm)<br />

Figure 3.28. Dependence of the semiconduc<strong>to</strong>r energy gap of CdSe nanocrystals (Ncs), in the<br />

form of a glass (0) and a colloidal suspension (), on the mean particle radius. The colloidal<br />

nanocrystal spectral data are presented in Fig. 3.27. The solid curve gives the fit <strong>to</strong> the data<br />

using a parabolic band model for the vibrational potential. [From V. I. Klimov in Nalwa (2000),<br />

Vol. 4, Chapter 7, p. 465.1<br />

The pho<strong>to</strong>electron spectrometer sketched in Fig. 3.29 shows, at the lower left side,<br />

X-ray pho<strong>to</strong>ns incident on a specimen. The emitted pho<strong>to</strong>electrons then pass through<br />

a velocity analyzer that allows electrons within only a very narrow range of<br />

velocities <strong>to</strong> move along trajec<strong>to</strong>ries that take them from the entrance slit on the<br />

left, and allows them <strong>to</strong> pass through the exit slit on the right, and impinge on the<br />

detec<strong>to</strong>r. The detec<strong>to</strong>r measures the number of emitted electrons having a given<br />

kinetic energy, and this number is appreciable for kinetic energies for which<br />

Eq. (3.1 1) is satisfied.<br />

The energy states of a<strong>to</strong>ms or molecular ions in the valence band region have<br />

characteristic ionization energies that reflect perturbations by the surrounding lattice<br />

environment, so this environment is probed by the measurement. Related spectro-<br />

scopic techniques such as inverse pho<strong>to</strong>electron spectroscopy (IPS), Bremsstrahlung<br />

isochromat spectroscopy (BIS), electron energy-loss spectroscopy (EELS), and<br />

Auger electron spectroscopy provide similar information.<br />

As an example of the usefulness of X-ray pho<strong>to</strong>emission spectroscopy, the ratio<br />

of Ga <strong>to</strong> N in a GaN sample was determined by measuring the gallium 3d XPS peak<br />

at 1.1 185 keV and the nitrogen 1s peak at 0.3975 keV, and the result gave the<br />

average composition Ga,,95N. An XPS study of 10-nm InP provided the indium<br />

3d5,, asymmetric line shown in Fig. 3.30a, and this was analyzed <strong>to</strong> reveal the

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