Introduction to Nanotechnology

364 TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.6. Bandgaps E, expressed in electronvolts for type llCV semiconductors
(on left) and type lCVl materials (on right)’
P As Sb S Se Te
AI (2.45)/3.62 (2.15)/3.14 (1.63)/2.22 Zn 3.68 2.7 2.26
Gd (2.27)/2.78 1.43 0.70 Cd 2.49 1.75 1.43
In 1.35 0.36 0.18 Hg - -0.061 -0.30
(4.4 K)
“Indirect bandgaps are given in parentheses. The values for Si and Ge are (1.1 1)/3.48 and (0.66)/0.81 ey
respectively.
Source: Data from I? Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 2001,
table on inside front cover.
Table 8.7. Temperature dependence of bandgap dh/dT(ln ~CV/~C) and pressure
dependence of bandgap dE,/dP (in moV/GPa)’
P As Sb S Se Te
Tempemture Dependence dE,/dT
AI - (-0.4)/-0.51 (-3.5) Zn -0.47 -0.45 -0.52
Ga (-0.52)/-0.65 -0.395 -0.37 Cd -0.41 -0.36 -0.54
In -0.29 -0.35 -0.29
Si (-0.28) Ge (-0.37)/-0.4
Pressure Dependence dE,/dP
A1 - (-5.1)/102 (-15) Zn 57 70 83
Ga (-14)/105 115 140 Cd 45 50 80
In 108 98 157
Si (-14) Ge (50)/121
“The corresponding values for Si and Ge are listed below the 111-V values.
Source: Data from I? Y. Yu and M. Cardona, Fundamentals of Semiconduczors, Springer, Berlin,
2001, table on inside of front cover; see also Handbook of Chemistry and Physics, CRC Press, Boca
Raton, FL, 2002, pp. 12-105.