Introduction to Nanotechnology

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1 pair section ;- COT. .; . . I. . . r . . 9.6. APPLICATIONS 249 ~ c , L , 3 4 T T Figure 9.1 9. Linear array of A u ligand-stabilized ~ ~ nanoparticles with interparticle resistance RT, interparticle capacitance C, and self-capacitance Go. The single-electron current density jy entering from the right, which tunnels from particle to particle along the line, is indicated. [From V. Gasparian et al., in Nalwa (2000), Vol. 2, Chapter 11, p. 550.1 photodetectors. Sketches of four types of these detectors are presented in Fig. 9.20. The conduction band is shown at or near the top of these figures, occupied and unoccupied bound-state energy levels are shown in the wells, and the infrared transitions are indicated by vertical arrows. Incoming infrared radiation raises electrons to the conduction band, and the resulting electric current flow is a measure of the incident radiation intensity. Figure 9.20a illustrates a transition from bound state to bound state that takes place within the quantum well, and Fig. 9.20b shows a transition from bound state to continuum. In Fig. 9.20~ the continuum begins at the top of the well, so the transition is from bound state to quasi-bound state. Finally in Fig. 9.20d the continuum band lies below the top of the well, so the transition is from bound state to miniband. The responsivity of the detector is the electric current (amperes, A) generated per watt (W) of incoming radiation. Figure 9.2 1 shows a plot of the dark-current density (before irradiation) versus bias voltage for a GaAs/AlGaAs bound state-continuum photodetector, and Fig. 9.22 shows the dependence of this detector's responsivity on Figure 9.20. Schematic conduction band (shaded) and electron transition schemes (vertical arrows) of the following types: (a) bound state to bound state; (b) bound state to continuum; (c) bound state to quasi-bound; (d) bound state to miniband, for quantum-well infrared photodetectors. [Adapted from S. S. Li and M. Z. Tidrow, in Nalwa (2000), Vol. 4, Chapter 9, p. 563.1
250 QUANTUM WELLS, WIRES, AND DOTS t Y U d 1 00 t 1 Figure 9.21. Dark-current density versus bias voltage characteristics for a GaAs/AIGaAs quantum-well long-wavelength infrared (LWIR) photodetector measured at three indicated temperatures. A 300-K background current plot (BG, dashed curve) is also shown. [From M. Z. Tidrow, J. C. Chiang, S. S. Li, and K. Bacher, Appl. Phys. Lett. 70, 859 (1997).] 0.6 I I 1 1 1 I I I , ) I I I I I I I I I I I 1 1 I I I I I I LWIR: T = 77 K, bias = 2 V WAVELENGTH (pm) Figure 9.22. Peak responsivity versus wavelength at 77K for a 2-V bias at normal and 45" angles of incidence. [From M. Z. Tidrow, J. C. Chiang, S. S. Li, and K. Bacher, Appl. Phys. Lett. 70, 859 (1997).] (a)
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INTRODUCTION TO NANOTECHNOLOGY Char
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CONTENTS Preface xi 1 Introduction
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5.2 Carbon Molecules 103 5.2.1 Natu
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9.4 Excitons 244 9.5 Single-Electro
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PREFACE In recent years nanotechnol
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INTRODUCTION The prefix nano in the
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INTRODUCTION 3 he recognized the ex
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1000 (I) a 900 4 800 a 900 I 6 700
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INTRODUCTION 7 developed before the
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2.1. STRUCTURE 9 mechanics, the res
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X T 2.1. STRUCTURE 11 Figure 2.4. C
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2.1. STRUCTURE 13 Figure 2.6. Thirt
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Sodium Nanoparticle Na, Magic Numbe
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2.1. STRUCTURE 17 of the large anio
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2.1. STRUCTURE 19 other, and high-f
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2.2. ENERGY BANDS 21 Conduction Ban
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2.2. ENERGY BANDS 23 Figure 2.13. S
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2.2. ENERGYBANDS 25 band at point T
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A X ' Wavevector A Si c z 2.2. ENER
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2.2. ENERGY BANDS 29 bands of Figs.
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2.3. LOCALIZED PARTICLES 31 add ele
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1 meV 10 meV 100 meV FJ E W 1 eV 10
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3 METHODS OF MEASURING PROPERTIES 3
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3.2. STRUCTURE 37 Table 3.1. Crysta
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3.2. STRUCTURE 39 Figure 3.2. Two-d
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3.2. STRUCTURE 41 The widths of the
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44 METHODS OF MEASURING PROPERTIES
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3.3. MICROSCOPY 51 types of transit
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3.3. MICROSCOPY 53 Actual diverging
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Tunneling current Tunneling current
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3.3. MrCAOSCOPY 57 and the latter m
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3.4. SPECTROSCOPY 59 From Eq. (3.8)
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1 Average Panicle FWHM Size (nm) in
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CdSe colloidal NCs a = 1.2 nrn 3.4.
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El X-RAY TUBE 8000 - A 6000 - 4000
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2 N I w 3.0 2.5 2.0 1.5 1 .o 0.5 3.
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i 3.4. SPECTROSCOPY 69 NMR involves
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T=220K - 2G H FURTHER READING 71 Fi
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NUMBER OF ATOMS RADIUS (nm) 1 10 1
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I L 7 3 5 7 9 11 13 15 17 NUMBER OF
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JELLIUM MODEL OF CLUSTERS ATOMS CLU
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1.02 { 1.01 - 1 - 0.99 - 4.2. METAL
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4.2. METAL NANOCLUSTERS 81 Figure 4
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4.2. METAL NANOCLUSTERS 83 Figure 4
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-0 100 200 300 400 500 600 MASSICHA
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a 42. METAL NANOCLUSTERS 87 Figure
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. . . .. . - . D 111111111111111111
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3 4 2.5 0 cn g 2 0 z d 1.5 t a 9 1
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4.3. SEMICONDUCTING NANOPARTICLES 9
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4.4. RARE GAS AND MOLECULAR CLUSTER
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4.5. METHODS OF SYNTHESIS 97 d Figu
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4.5. METHODS OF SYNTHESIS 99 isopro
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PULSED LASER BEAM 1 1 1 1 1 I ROTAT
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5.1. INTRODUCTION CARBON NANOSTRUCT
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5.2. CARBON MOLECULES 105 methane d
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5.3. CARBON CLUSTERS 107 -0 20 40 6
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PHOTON ENERGY (electron volts) 5.3.
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Figure 5.6. Structure of the CEO fu
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1 30 0 14.1 14.2 14.3 14.4 14.5 LAT
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(c) 5.4. CARBON NANOTUBES 115 Figur
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5.4. CARBON NANOTUBES 1 17 The mech
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5.4. CARBON NANOTUBES 11 9 investig
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5.4. CARBON NANOTUBES 121 energy gr
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5.4. CARBON NANOTUBES 123 stretch c
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5.5. APPLICATIONS OF CARBON NANOTUB
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- v) 450 : 400 3 350 1 300 : 5 250
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BULK NANOSTRUCTURED MATERIALS In th
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h 8 0 6.1. SOLID DISORDERED NANOSTR
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6.1. SOLID DISORDERED NANOSTRUCTURE
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6.2. NANOSTRUCTURED CRYSTALS 153 qu
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6.2. NANOSTRUCTURED CRYSTALS 155 Fi
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158 BULK NANOSTRUCTURED MATERIALS 6
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160 BULK NANOSTRUCTURED MATERIALS w
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162 BULK NANOSTRUCTURED MATERIALS 0
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164 BULK NANOSTRUCTURED MATERIALS n
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166 NANOSTRUCTURED FERROMAGNETISM f
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168 NANOSTRUCTURED FERROMAGNETISM i
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170 NANOSTRUCTURED FERROMAGNETISM M
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172 NANOSTRUCTURED FERROMAGNETISM h
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174 NANOSTRUCTURED FERROMAGNETISM d
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176 NANOSTRUCTURED FERROMAGNETISM o
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4 h $ 3 7.5. NANOCARBON FERROMAGNET
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7.6. GIANT AND COLOSSAL MAGNETORESI
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1.4 N 1 1.2 z " 1 0 v 5 h 0.8 0 0.6
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7.6. GIANT AND COLOSSAL MAGNETORESI
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7.7. FERROFLUIDS 187 Figure 7.22. M
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7.7. FECIROFLUIDS 189 Figure 7.25.
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7.7. FERRQFLUlOS 191 FerroRuids can
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FURTHER READING FURTHER READING 193
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10- IR f IA -1 8.1. INTRODUCTION 19
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8.2. INFRARED FREQUENCY RANGE 197 1
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Page 214 and 215: 8.2.3. Raman Spectroscopy 8.2. INFR
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Page 218 and 219: - r I 520 51 8 v 6 516 a" 51 4 51 2
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Page 222 and 223: v) - C 3 8 600 400 100 0 e e 10 20
Page 224 and 225: i E (cm-’ ) 20 c I 1 ID 0 4x107 8
Page 226 and 227: - ? m v .- - z In C a, c C - .. . .
Page 228 and 229: Excitatior I [eV]: 2.175 2.214 2.25
Page 230 and 231: 6 100 200 300 Time (ns) 8.3. LUMINE
Page 232 and 233: 400 nm Laser / Free excitons Trappe
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Page 236 and 237: FURTHER READING 225 P. Milani and C
Page 238 and 239: 9.2. PREPARATION OF QUANTUM NANOSTR
Page 240 and 241: i 9.2. PREPARATION OF QUANTUM NANOS
Page 242 and 243: 9.3. SIZE AND DIMENSIONALITY EFFECT
Page 248 and 249: w n 3 2 1 9.3. SIZE AND DIMENSIONAL
Page 254 and 255: WE) Quantum Dot Number of Electrons
Page 256 and 257: 9.5. SINGLE-ELECTRON TUNNELING 245
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Page 262 and 263: o.6 LWIR: T = 77 K 45" incidence AD
Page 264 and 265: 9.7. SUPERCONDUCTIVITY 253 horizont
Page 266 and 267: 9.7. SUPERCONDUCTIVITY 255 applied
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Page 270 and 271: 10.1. SELF-ASSEMBLY 259 factor of 2
Page 272 and 273: (a) (LI (dl 10.1. SELF-ASSEMBLY 261
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Page 292 and 293: I1 ORGANIC COMPOUNDS AND POLYMERS 1
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11.5. SVPRAMOLECUUAR STRUCTURES 2s
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11.5. SUPRAMOLECULAR STRUCTURES 301
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11 5. SUPRAMOLECULAR STRUCTURES 303
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11.5. SUPRAMOLECULAR STRUCTURES 305
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BiodegradaWe surface 4 Functional g
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FURTHER READING 309 F. J. Owens and
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12.2. BIOLOGICAL BUILDING BLOCKS 31
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314 BIOLOGICAL MATERIALS which we w
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316 BIOLOGICAL MATERIALS Table 12.2
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318 BIOLOGICAL MATERtALS i J / Flgu
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320 BIOLOGICAL MATERIALS Pyrimidine
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322 BlOLMjlCAL MATERiALS (a) DNA do
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324 BIOLOGICAL MATERIALS so each wo
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326 BIOLOGICAL MATERIALS 12.4.2. Mi
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328 BIOLOGICAL MATERIALS tions they
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330 BIOLOGICAL MATERIALS hardened f
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13 NANOMACHINES AND NANODEVICES In
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334 NANOMACHINES AND NANODEVICES CA
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336 NANOMACHINES AND NANODEVICES Op
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338 NANOMACHINES AND NANODEVICES ti
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340 NANOMACHINES AN0 NANODEVICES PO
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342 NANOMACHINES AND NANODEVICES X
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344 NANOMACHINES AND NANODEVICES na
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346 NANOMACHINES AND NANODEVICES 31
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348 NANOMACHINES AND NANODEVICES -
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350 NANOMACHINES AND NANODEVICES re
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352 NANOMACHINES AND NANODEVICES 1
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354 NANOMACHINES AND NANODEVICES -1
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A.l. INTRODUCTION APPENDIX A FORMUL
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A.3. PARTIAL CONFINEMENT 359 limiti
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APPENDIX B TABULATIONS OF SEMICONDU
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TABULATIONS OF SEMICONDUCTING MATER
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Table B.8. Effective masses m+ rela
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372 INDEX amoeba, 3 16 amphiphilic,
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374 INDEX CdS, 9, 130, 213, 216, 36
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376 INDEX dispersion, 277 disulfide
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378 INDEX Ga (gallium) (continued)
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380 INDEX length (continued) critic
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382 INDEX multiple ionization, 93 r
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384 INDEX pi-conjugation, 282, 292
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silica, 269 silica-alumina, 269, 27
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388 INDEX wavefimction (continued)
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